A Review of Strain Analysis Using Electron Backscatter Diffraction

2011 ◽  
Vol 17 (3) ◽  
pp. 316-329 ◽  
Author(s):  
Stuart I. Wright ◽  
Matthew M. Nowell ◽  
David P. Field
Keyword(s):  
Plastic Strain ◽  
Materials Science ◽  
Electron Backscatter Diffraction ◽  
Strain Analysis ◽  
Current State ◽  
Mapping Parameters ◽  
Submicron Scale ◽  
Electron Backscatter ◽  
Ebsd Technique ◽  
Backscatter Diffraction

AbstractSince the automation of the electron backscatter diffraction (EBSD) technique, EBSD systems have become commonplace in microscopy facilities within materials science and geology research laboratories around the world. The acceptance of the technique is primarily due to the capability of EBSD to aid the research scientist in understanding the crystallographic aspects of microstructure. There has been considerable interest in using EBSD to quantify strain at the submicron scale. To apply EBSD to the characterization of strain, it is important to understand what is practically possible and the underlying assumptions and limitations. This work reviews the current state of technology in terms of strain analysis using EBSD. First, the effects of both elastic and plastic strain on individual EBSD patterns will be considered. Second, the use of EBSD maps for characterizing plastic strain will be explored. Both the potential of the technique and its limitations will be discussed along with the sensitivity of various calculation and mapping parameters.

Electron Backscatter Diffraction In The Sem: Is Electron Diffraction In The Tem Obsolete?

1997 ◽  
Vol 3 (S2) ◽  
pp. 879-880
Author(s):  
J. R. Michael ◽  
M. E. Schlienger ◽  
R. P. Goehner
Keyword(s):  
Electron Beam ◽  
Materials Science ◽  
Electron Backscatter Diffraction ◽  
Polycrystalline Sample ◽  
Interesting Application ◽  
Electron Backscatter ◽  
Backscatter Diffraction ◽  
Over 40 Years ◽  
Stationary Electron ◽  
Scanning Electron

The technique of electron backscatter diffraction (EBSD) in the scanning electron microscope is currently finding a large number of important applications in materials science. The patterns formed through EBSD were first studied over 40 years ago. It has only been in the last 10 years that the technique has really begun to have an impact on the study of materials. The introduction of automatic pattern indexing software has enabled the technique to be used for mapping the orientation of a polycrystalline sample. The more exciting and universally interesting application of the technique has been the identification of micron and sub-micron sized crystalline phases based on their chemistry and crystallography determined by EBSD.EBSD is obtained by illuminating a highly tilted sample (>45° from horizontal) with a stationary electron beam. Electrons backscattered from the sample may satisfy the condition for channeling and will produce images that contain bands of increased and decreased intensity that are equivalent to electron channeling patterns.

scholarly journals Introduction to a Special Issue on Electron Backscatter Diffraction

2011 ◽  
Vol 17 (3) ◽  
pp. 315-315
Author(s):  
Andrew Deal
Keyword(s):  
Materials Science ◽  
Electron Backscatter Diffraction ◽  
Crystalline Materials ◽  
Grain Boundary Character ◽  
Electron Backscatter ◽  
Dynamical Simulations ◽  
Scientists And Engineers ◽  
Microscopy Techniques ◽  
Backscatter Diffraction ◽  
Insight Into

Arguably one of the most significant microscopy techniques of the past decade, electron backscatter diffraction (EBSD) has provided scientists and engineers with tremendous insight into the structure of crystalline materials. What started with basic observations of electron diffraction in the middle of the 20th century has grown into a mature technology that bridges the gap between the macro and micro length scales. EBSD has found a home in both the materials science and geological communities characterizing crystallographic texture and preferred orientations, residual strain, grain boundary character and networks, and identifying constituent phases. Advancements in computational power, camera technology, indexing algorithms, sample preparation, and dynamical simulations have made this possible.

Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

2012 ◽  
Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  
Keyword(s):  
High Resolution ◽  
Cross Section ◽  
High Throughput ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Grain Structure ◽  
Electron Backscatter ◽  
Section Surface ◽  
Backscatter Diffraction ◽  
Section Analysis

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

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