LED Die Bonding

2016 ◽  
pp. 733-766
Author(s):  
Yu-Chou Shih ◽  
Gunwoo Kim ◽  
Jiun-Pyng You ◽  
Frank G. Shi
Keyword(s):  
Die Bonding

Analysis of Two Electrical Failures Caused by Die Attach of Exposed Pad Package

2014 ◽  
Author(s):  
Jinglong Li ◽  
Motohiko Masuda ◽  
Yi Che ◽  
Miao Wu
Keyword(s):  
Bonding Process ◽  
Die Attach ◽  
Die Bonding ◽  
Generic Analysis

Abstract Die attach is well known in die bonding process. Its electrical character is simple. But some failures caused by die attach are not so simple. And it is not proper to analyze by a generic analysis flow. The analysis of two failures caused by die attach are presented in this paper.

scholarly journals Analysis of the formation mechanism of coarse-dense structure of silver paste in die bonding

2021 ◽  
Author(s):  
Shingo Ishihara ◽  
Tetsu Takemasa ◽  
Katsuaki Suganuma ◽  
Junya Kano
Keyword(s):  
Formation Mechanism ◽  
Dense Structure ◽  
Silver Paste ◽  
Die Bonding

Die Bonding Issues on Silicon Carbide Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 875-878 ◽  
Author(s):  
Seung Yong Lee ◽  
Jang Sub Lee ◽  
Tae Hong Kim ◽  
Sung Yong Choi ◽  
Hak Jong Kim ◽  
...  
Keyword(s):  
Shear Test ◽  
Vertical Structure ◽  
Optical Microscope ◽  
Device Fabrication ◽  
Cleaning Process ◽  
X Ray ◽  
The Third ◽  
Bottom Side ◽  
Die Bonding

We report on the die bonding processes and how the surface roughness and metallization schemes affect the processes of die bonding in 4H-SiC device fabrication using a soldering test and die shear test (DST) with differently prepared 4H-SiC samples. The first set of samples (FZ#1 and FZ#2) was capped with sequentially evaporated Ti and Au on an annealed Ni layer. The second set of samples (FZ#3 and FZ#4) and the third set of samples (FZ#5 and FZ#6) were prepared by 4μm-thick Au electroplating on an annealed Ni layer and an un-annealed Ni layer, respectively. The quality of the soldering, such as the solder coverage, void, and adhesion, was characterized by optical microscope, X-ray microprobe, and DST. We found that the samples (FZ#4 and FZ#6) deposited by Au electroplating on C-face (bottom-side) 4H-SiC provided a satisfactory result for the tests of solder coverage, void, and DST and also realized the cleaning process prior to the electroplating and soldering was the most crucial in the die packaging processes of vertical structure devices. The void fraction measured by X-ray microprobe for the samples, FZ#4 and FZ#6 was 2.2% (average for 5 samples) and 0.8% (average for 3 samples), respectively.

Mechanical Properties of Sintered Ag as a New Material for Die Bonding: Influence of the Density

2014 ◽  
Vol 43 (12) ◽  
pp. 4510-4514 ◽  
Author(s):  
V. Caccuri ◽  
X. Milhet ◽  
P. Gadaud ◽  
D. Bertheau ◽  
M. Gerland
Keyword(s):  
Mechanical Properties ◽  
New Material ◽  
Die Bonding ◽  
Sintered Ag

scholarly journals Broadband III-V on silicon hybrid superluminescent LEDs by quantum well intermixing and multiple die bonding

2014 ◽  
Author(s):  
A. De Groote ◽  
J. D. Peters ◽  
M. L. Davenport ◽  
M. J. R. Heck ◽  
R. Baets ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing ◽  
Die Bonding

Transient liquid-phase sintering using silver and tin powder mixture for die bonding

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EC14 ◽  
Author(s):  
Masahisa Fujino ◽  
Hirozumi Narusawa ◽  
Yuzuru Kuramochi ◽  
Eiji Higurashi ◽  
Tadatomo Suga ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Powder Mixture ◽  
Transient Liquid Phase ◽  
Liquid Phase Sintering ◽  
Die Bonding ◽  
Transient Liquid Phase Sintering

Die Bonding Issues on Silicon Carbide Diodes

2006 ◽  
pp. 875-878
Author(s):  
Seung Yong Lee ◽  
Jang Sub Lee ◽  
Tae Hong Kim ◽  
Sung Yong Choi ◽  
Hak Jong Kim ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Die Bonding

Die to Die and Die To Wafer Bonding Solution for High Density, Fine Pitch Micro-Bumped Die

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 002251-002284 ◽  
Author(s):  
Gilbert Lecarpentier ◽  
Joeri De Vos
Keyword(s):  
Wafer Bonding ◽  
Flip Chip ◽  
High Accuracy ◽  
High Density ◽  
Size Reduction ◽  
Direct Impact ◽  
3 Dimensional ◽  
Fine Pitch ◽  
Placement Accuracy ◽  
Die Bonding

Higher density interconnection using 3-Dimensional technology implies a pitch reduction and the use of micro-bumps. The micro-bump size reduction has a direct impact on the placement accuracy needed on the die placement and flip chip bonding equipment. The paper presents a Die-to-Die and Die-to-Wafer, high accuracy, die bonding solution illustrated by the flip chip assembly of a large 2x2cm die consisting of 1 million 10 μm micro-bumps at 20 μm pitch

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