Author(s):  
Charles W. Allen

With respect to structural consequences within a material, energetic electrons, above a threshold value of energy characteristic of a particular material, produce vacancy-interstial pairs (Frenkel pairs) by displacement of individual atoms, as illustrated for several materials in Table 1. Ion projectiles produce cascades of Frenkel pairs. Such displacement cascades result from high energy primary knock-on atoms which produce many secondary defects. These defects rearrange to form a variety of defect complexes on the time scale of tens of picoseconds following the primary displacement. A convenient measure of the extent of irradiation damage, both for electrons and ions, is the number of displacements per atom (dpa). 1 dpa means, on average, each atom in the irradiated region of material has been displaced once from its original lattice position. Displacement rate (dpa/s) is proportional to particle flux (cm-2s-1), the proportionality factor being the “displacement cross-section” σD (cm2). The cross-section σD depends mainly on the masses of target and projectile and on the kinetic energy of the projectile particle.


1968 ◽  
Vol 46 (6) ◽  
pp. 543-550 ◽  
Author(s):  
E. Uggerhøj ◽  
J. U. Andersen

The emission yield from single crystals doped with β emitters is investigated. In the axis direction, energetic electrons emitted from a lattice position show a peak in yield up to 2.4 times the normal yield, whereas positrons emitted from the same positions show a dip by a factor of 4 from the normal yield. Electrons emitted from interstitial positions show no peak in yield. Energetic electrons transmitted through a thin single crystal experience increased multiple scattering when the incoming beam is aligned with an axis direction. The influence of atomic planes on the motion of electrons and positrons is also investigated. Furthermore, the electron peak and positron dip have been used for the localization of foreign atoms in single crystals.


2001 ◽  
Vol 34 (2) ◽  
pp. 108-113 ◽  
Author(s):  
Thomas Malcherek ◽  
Carsten Paulmann ◽  
M. Chiara Domeneghetti ◽  
Ulrich Bismayer

Diffuse scattering in titanite has been measured at three temperatures, 0.951Tc, 1.053Tcand 1.177Tc, using synchrotron radiation.Tc= 487 K is the temperature of the antiferroelectric paraelectric phase transition. Charge-coupled device (CCD) intensity measurements were centred about the \bar{4}01 reciprocal-lattice position (space-group settingP21/a) and extended beyond the neighbouring \bar{4}11 and \bar{4}\bar{1}1 fundamental positions. Planar diffuse scattering intensity is observed normal to [100] with a lens-shaped maximum centred at \bar{4}01. On approachingTcfrom above, the intensity of the maximum at \bar{4}01 increases, while intensity scattered into the planes decreases at large distances to the critical zone-boundary position. The intensity distribution is interpreted in terms of a two-dimensional spin-1/2 Ising model, in which individual spin states represent the collective displacement of octahedrally coordinated Ti atoms parallel to [100].


1993 ◽  
Vol 73 (12) ◽  
pp. 8161-8168
Author(s):  
A. Shih ◽  
P. L. Cowan ◽  
S. Southworth ◽  
L. Fotiadis ◽  
C. Hor ◽  
...  

1995 ◽  
Vol 7 (35) ◽  
pp. 6971-6980 ◽  
Author(s):  
T Gog ◽  
P Schotters ◽  
J Falta ◽  
G Materlik ◽  
M Grodzicki
Keyword(s):  

1968 ◽  
Vol 46 (6) ◽  
pp. 675-688 ◽  
Author(s):  
W. M. Gibson ◽  
F. W. Martin ◽  
R. Stensgaard ◽  
F. Palmgren Jensen ◽  
N. I. Meyer ◽  
...  

Hall effect and resistivity measurements from room temperature to 4.2 °K have been carried out on silicon samples implanted with 400-keV phosphorus, lithium, and boron ions. Implantations were carried out at 25 °C in random as well as precisely controlled channeling directions, and the electrical measurements were made after successive annealing treatments. These measurements are interpreted in terms of the final lattice position of the injected impurity ions and the amount and type of crystal defects produced during the implantation and are correlated with physical measurements of lattice position and radiation damage studied by using nuclear-reaction, beta-particle emission, and Rutherford-scattering techniques.


2012 ◽  
Vol 111 (5) ◽  
pp. 053528 ◽  
Author(s):  
S. Decoster ◽  
U. Wahl ◽  
S. Cottenier ◽  
J. G. Correia ◽  
T. Mendonça ◽  
...  

1998 ◽  
Vol 05 (01) ◽  
pp. 145-149 ◽  
Author(s):  
J. Falta ◽  
D. Bahr ◽  
G. Materlik ◽  
B. H. Müller ◽  
M. Horn-Von Hoegen

A combination of measurements of crystal truncation roda and X-ray standing waves has been used for a detailed characterization of buried Ge δ layers on Si(001). Measurements of crystal truncation rods reveal the interface roughness, the δ layer lattice constant and the δ layer concentration. From measurements with X-ray standing waves the dopant lattice position and crystallinity of the δ layer are determined. We find a linear dependence of the local tetragonal distortion of the Ge bonding in the δ layer on the Ge concentration in the layer.


Author(s):  
S. McKernan

The information contained in transmission electron microscope (TEM) images originates from many sources. It is the aim of image processing to extract those details of the image that arise from features of interest in the specimen, and to supress the remaining details. For periodic micrographs (lattice images of perfect crystals for example) this has been accomplished typically by either averaging over many unit cells in real space or through the use of Fourier filtering techniques in reciprocal space. Both of these techniques rely on the fact that useful information occurs periodically (i.e. at each lattice position) so that departures from this periodicity are a result of image degradation only. Obviously if there are departures from perfect regularity in the image, as at a stacking fault or a twin boundary for example, supressing the non-periodic information will not reveal much about the nature of the faults.


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