Electrical and physical measurements on silicon implanted with channelled and nonchanneled dopant ions

1968 ◽  
Vol 46 (6) ◽  
pp. 675-688 ◽  
Author(s):  
W. M. Gibson ◽  
F. W. Martin ◽  
R. Stensgaard ◽  
F. Palmgren Jensen ◽  
N. I. Meyer ◽  
...  
Keyword(s):  
Room Temperature ◽  
Crystal Defects ◽  
Beta Particle ◽  
Electrical Measurements ◽  
Resistivity Measurements ◽  
Physical Measurements ◽  
Lattice Position ◽  
Rutherford Scattering ◽  
Impurity Ions ◽  
Boron Ions

Hall effect and resistivity measurements from room temperature to 4.2 °K have been carried out on silicon samples implanted with 400-keV phosphorus, lithium, and boron ions. Implantations were carried out at 25 °C in random as well as precisely controlled channeling directions, and the electrical measurements were made after successive annealing treatments. These measurements are interpreted in terms of the final lattice position of the injected impurity ions and the amount and type of crystal defects produced during the implantation and are correlated with physical measurements of lattice position and radiation damage studied by using nuclear-reaction, beta-particle emission, and Rutherford-scattering techniques.

scholarly journals Old Donors for New Molecular Conductors: Combining TMTSF and BEDT-TTF with Anionic (TaF6)1−x/(PF6)x Alloys

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 386
Author(s):  
Magali Allain ◽  
Cécile Mézière ◽  
Pascale Auban-Senzier ◽  
Narcis Avarvari
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Density Wave ◽  
Spin Density Wave ◽  
Orthorhombic Phase ◽  
Molecular Conductors ◽  
Bechgaard Salts ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Resistivity Measurements

Tetramethyl-tetraselenafulvalene (TMTSF) and bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) are flagship precursors in the field of molecular (super)conductors. The electrocrystallization of these donors in the presence of (n-Bu4N)TaF6 or mixtures of (n-Bu4N)TaF6 and (n-Bu4N)PF6 provided Bechgaard salts formulated as (TMTSF)2(TaF6)0.84(PF6)0.16, (TMTSF)2(TaF6)0.56(PF6)0.44, (TMTSF)2(TaF6)0.44(PF6)0.56 and (TMTSF)2(TaF6)0.12(PF6)0.88, together with the monoclinic and orthorhombic phases δm-(BEDT-TTF)2(TaF6)0.94(PF6)0.06 and δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57, respectively. The use of BEDT-TTF and a mixture of (n-Bu4N)TaF6/TaF5 afforded the 1:1 phase (BEDT-TTF)2(TaF6)2·CH2Cl2. The precise Ta/P ratio in the alloys has been determined by an accurate single crystal X-ray data analysis and was corroborated with solution 19F NMR measurements. In the previously unknown crystalline phase (BEDT-TTF)2(TaF6)2·CH2Cl2 the donors organize in dimers interacting laterally yet no organic-inorganic segregation is observed. Single crystal resistivity measurements on the TMTSF based materials show typical behavior of the Bechgaard phases with room temperature conductivity σ ≈ 100 S/cm and localization below 12 K indicative of a spin density wave transition. The orthorhombic phase δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57 is semiconducting with the room temperature conductivity estimated to be σ ≈ 0.16–0.5 S/cm while the compound (BEDT-TTF)2(TaF6)2·CH2Cl2 is also a semiconductor, yet with a much lower room temperature conductivity value of 0.001 to 0.0025 S/cm, in agreement with the +1 oxidation state and strong dimerization of the donors.

ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs

1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dislocation Loops ◽  
Good Recovery ◽  
Electrical Measurements ◽  
X Ray ◽  
Defect Complexes ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Activation Efficiency ◽  
Very High

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.

Evolution of crystal structure of dual layered molecular conductor (ET)4ZnBr4(C6H4Cl2) with temperature

CrystEngComm ◽  
2021 ◽  
Author(s):  
Gennady V. Shilov ◽  
Elena I. Zhilyaeva ◽  
Sergey M. Aldoshin ◽  
Alexandra M Flakina ◽  
Rustem B. Lyubovskii ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electrical Resistivity ◽  
Single Crystal ◽  
Room Temperature ◽  
Organic Conductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Molecular Conductor ◽  
Abrupt Changes

Electrical resistivity measurements of a dual layered organic conductor (ET)4ZnBr4(1,2-C6H4Cl2) above room temperature show abrupt changes in resistivity at 320 K. Single-crystal X-ray diffraction studies in the 100-350 K range...

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

scholarly journals Production and Electrical Properties of a CuZnAlMn(SMA)/p-Si Diode

2021 ◽  
Author(s):  
EMINE ALDIRMAZ ◽  
M. Güler ◽  
E. Güler
Keyword(s):  
Room Temperature ◽  
Schottky Contact ◽  
Phase Identification ◽  
Frequency Interval ◽  
Electrical Measurements ◽  
X Ray ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Type Semiconductor ◽  
Diode Current

Abstract In this study, the Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy was used. Phase identification was performed with the Scanning electron microscope (SEM), and energy-dispersive X-ray (EDX). We observed in the austenite phase in Cu-23.37%Zn-13.73%Al-2.92%Mn (at.%) alloy. To produce a new Schottky diode, CuZnAlMn alloy was exploited as a Schottky contact on p-type semiconductor silicon substrate. To calculate the characteristics of the produced diode, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) analyzes were taken at room temperature (300 K), in the dark and under various lights. Using electrical measurements, the diode's ideality factor (n), barrier height (Φb), and other diode parameters were calculated. Besides, the conductance / capacitance-voltage (G/C-V) characteristics of the diode were studied and in a wide frequency interval at room temperature. Also, the capacitance and conductance values strongly ​​ rely on the frequency. From the present experimental results, the obtained diode can be used for optoelectronic devices.

InAsSbBi and InSbBi: Potential Material Systems for Infrared Detection

1986 ◽  
Vol 90 ◽  
Author(s):  
S. M. Bedair ◽  
T. P. Humphreys ◽  
P. K. Chaing ◽  
T. Katsuyama
Keyword(s):  
Infrared Detectors ◽  
Room Temperature ◽  
Infrared Detection ◽  
Electrical Measurements ◽  
Quaternary Alloys ◽  
Mocvd Growth ◽  
Wide Range ◽  
Metallic Bismuth ◽  
Bismuth Antimony ◽  
First Time

ABSTRACTInSb1−x Bix (0.01 < × < 0.14) and InAsSbBi quaternary alloys are potentially attractive materials for the development of semiconductor infrared detectors covering the 8–14 μm range [1,2,3].We report for the first time, MOCVD growth of InSo1−x Bix (0.01 < × < 0.14) and InAs1−x−y Sbx Biy with 0.5 < × < 0.7 and 0.01 < y < 0.04 on both GaAs and InSb substrates using AsH3, TMSb, TEI and TMBi. Electrical measurements of the undoped InSo0.99 Bi0.01 shows a background carrier concentration of approximately 1016/cm3 and a room temperature mobility of 20,215 cm2/V.sec. To-date, these are the best reported electrical measurements for this ternary alloy.The formation of a secondary Bi phase and single crystal growth of metallic bismuth-antimony at the surface of InSo1−x Bix which results in deterioration of morphology with increasing values of x is also investigated. A wide range of analytic techniques, including SEM, EDX, electron microprobe and AES have been employed in our surface analysis.

Measurement of the Absorption of Microwave Power by Corroded Metals

1988 ◽  
Vol 124 ◽  
Author(s):  
Ralph W. Bruce ◽  
R. A. Quar
Keyword(s):  
Stainless Steels ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Surface Conductivity ◽  
Metallic Alloys ◽  
Metal Alloys ◽  
Electrical Measurements ◽  
Organic Mixture ◽  
Heat Treated ◽  
Microwave Signals

ABSTRACTMetal alloys, when exposed to a salt/organic environment at elevated temperatures, corrode resulting in a decrease in the surface conductivity. This decrease can be monitored and assessed via the measurement of the incident and reflected microwave signals impinging upon the corroded surface. Several metallic alloys, stainless steels and inconels, were treated with a salt/organic mixture (proprietary) and heat treated at 1100 F. Periodically, the metals were removed from the furnace, allowed to cool to room temperature, and measured electrically. The samples were re-coated with the salt/organic mixture and re-heat treated. The electrical measurements showed a generally increased power absorption as corrosion thickness increased.

An Experimental Study of Carbon Nanotube Reinforcements

2011 ◽  
Author(s):  
Lauren Patrin ◽  
Frank Chow ◽  
Gabriela Philippart ◽  
Feridun Delale ◽  
Benjamin Liaw ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Young’S Modulus ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Young's Modulus ◽  
Testing Machine ◽  
Type I ◽  
Electrical Measurements ◽  
Standard Type ◽  
Reinforcement Percentage

Due to their high strength and stiffness carbon nanotubes (CNTs) have been considered as candidates for reinforcement of polymeric resins. It is also known that the addition of CNTs to polymeric matrix results in highly conductive nanocomposites, making the material multifunctional. Most of the CNT reinforced polymeric nanocomposite systems reported in the literature have been studied at room temperature. However, in many applications, materials may be subjected from low to elevated temperatures. Thus, the aim of this research is to study CNT reinforced polypropylene (PP) specimens at room, elevated and low temperatures. ASTM standard Type I specimens manufactured via injection molding and reinforced with 0.2%, 1%, 3%, and 6% CNTs were first subjected to tensile loads in a universal testing machine at room temperature. Neat PP resin specimens were also tested to provide baseline data. The tests were repeated at −54°C (−65°F), −20°C (−4°F), 49°C (120°F) and 71°C (160°F). The results were plotted as stress-strain curves and analyzed to delineate the effect of CNT reinforcement percentage and temperature on the mechanical properties. It was noted that as the percentage of CNT reinforcement increases, the resulting nanocomposite becomes stiffer (higher Young’s modulus), has higher strength and becomes more brittle. Temperature has a drastic effect on the behavior of the nanocomposite. As the temperature increases, at a given reinforcement percentage the material becomes more ductile with significantly lower Young’s modulus and strength compared to room temperature. At lower temperatures, the nanocomposite becomes more brittle with higher stiffness and strength, but significantly reduced failure strain. Also electrical measurements were conducted on the specimens to measure their resistance. For specimens reinforced with up to 3% of CNTs no electrical conductivity was detected. As expected at 6% CNT reinforcement (which is above the approximately 4% percolation limit reported in the literature), the specimens became electrically conductive. To predict the mechanical properties obtained experimentally, a micromechanics based model is presented and compared with the experimental results.

scholarly journals Formation of Metastable Disordered Ni3Al by Pulsed Laser Induced Rapid Solidification

1990 ◽  
Vol 213 ◽  
Author(s):  
Jeffrey A. West ◽  
James T. Manos ◽  
Michael J. Aziz
Keyword(s):  
Rapid Solidification ◽  
Room Temperature ◽  
Interface Velocity ◽  
Phase Changes ◽  
Fast Time ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
Resistivity Measurements ◽  
Disordered Lattice ◽  
Transmission Electron

ABSTRACTThin films of Ni3Al formed by co-evaporation onto insulating substrates form a single phase fcc disordered lattice upon rapid solidification following excimer laserinduced melting with an interface velocity of ~4 m/s. Transmission Electron Microscopy (TEM) and x-ray diffraction (XRD) analyses exhibit no superlattice diffraction at room temperature. Resistivity measurements, indicating that the disordered phase has a higher resistivity and much smaller temperature coefficient at room temperature than the stable ordered (L12) phase, permit us to monitor phase changes and ordering on a fast time-scale. Subsequent annealing recovers long-range order, with resistivity measurements indicating that reordering begins just below 300°C.

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