Memristive Power Optimization of Non-volatile Seven Transistors Static Random Access Memory Cell

2015 ◽  
pp. 245-253 ◽  
Author(s):  
Atibhi Jadon ◽  
Shyam Akashe
Keyword(s):  
Power Optimization ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory

A Novel Peripheral Circuit for SWSFET Based Multivalued Static Random-Access Memory

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040010
Author(s):  
R. H. Gudlavalleti ◽  
B. Saman ◽  
R. Mays ◽  
Evan Heller ◽  
J. Chandy ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Field Effect Transistors ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Input Gate ◽  
Reduction In Area

This paper presents the peripheral circuitry for a multivalued static random-access memory (SRAM) based on 2-bit CMOS cross-coupled inverters using spatial wavefunction switched (SWS) field effect transistors (SWSFETs). The novel feature is a two quantum well/quantum dot channel n-SWSFET access transistor. The reduction in area with four-bit storage-per-cell increases the memory density and efficiency of the SRAM array. The SWSFET has vertically stacked two-quantum well/quantum dot channels between the source and drain regions. The upper or lower quantum charge locations in the channel region is based on the input gate voltage. The analog behavioral modeling (ABM) of the SWSFET device is done using conventional BSIM 3V3 device parameters in 90 nm technology. The Cadence circuit simulations for the proposed memory cell and addressing/peripheral circuitry are presented.

Design of Low Power with Expanded Noise Margin Subthreshold 12T SRAM Cell for Ultra-Low Power Devices

2020 ◽  
pp. 2150106
Author(s):  
Harekrishna Kumar ◽  
V. K. Tomar
Keyword(s):  
Power Dissipation ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Time ◽  
Access Memory ◽  
Subthreshold Region ◽  
Noise Margin ◽  
Static Noise

In the proposed work, a differential write and single-ended read half-select free 12 transistors static random access memory cell is designed and simulated. The proposed cell has a considerable reduction in power dissipation with better stability and moderate performance. This cell operates in subthreshold region and has a higher value of read static noise margin as compared to conventional six transistors static random access memory cell. A power cut-off technique is utilized between access and pull-up transistors during the write operation. It results in an increase in write static noise margin as compared to all considered cells. In the proposed cell, read and write access time is improved along with a reduction in read/write power dissipation as compared to conventional six transistors static random access memory cell. The bitline leakage current in the proposed cell is reduced which improves the [Formula: see text] ratio of the cell under subthreshold region. The proposed cell occupies less area as compared to considered radiation-hardened design 12 transistors static random access memory cell. The computed electrical quality metric of proposed cell is better among considered static random access memory cells. Process variation analysis of read stability, access time, power dissipation, read current and leakage current has been performed with the help of Monte Carlo simulation at 3,000 points to get more soundness in the results. All characteristics of static random access memory cells are compared at various supply voltages.

Design of a Stable Low Power 11-T Static Random Access Memory Cell

2020 ◽  
Vol 29 (13) ◽  
pp. 2050206 ◽  
Author(s):  
Ashish Sachdeva ◽  
V. K. Tomar
Keyword(s):  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Signal To Noise ◽  
Access Memory ◽  
Noise Margin ◽  
Sram Cell ◽  
Variation Tolerance ◽  
Read Signal

In this paper, a 11-T static random-access memory (SRAM) cell has been examined that shows a fair reduction in read power dissipation while upholding the stability and moderate performance. In the presented work, parametric variability analysis of various design metrices such as signal to noise margin, read current and read power of the Proposed 11T cell are presented and compared with few considered topologies. The Proposed cell offers single ended write operation and differential read operation. The improvement in read signal to noise margin and write signal to noise margin with respect to conventional 6T SRAM is 10.63% and 33.09%, respectively even when the write operation is single ended. Mean hold static noise margin of the cell for 3000 samples is [Formula: see text] times higher than considered D2p11T cell. Sensitivity analysis of data retention voltage (DRV) with respect to temperature variations is also investigated and compared with considered topologies. DRV variation with temperature is least in FF process corner. In comparison to conventional 6T SRAM cell, the write and read delay of Proposed 11T cell gets improved by [Formula: see text] and 1.64%, respectively. Proposed 11T topology consumes least read energy in comparison with considered topologies. In comparison with another considered 11T topology, i.e., D2p11T cell, Proposed cell consumes 13.11% lesser area. Process variation tolerance with Monte Carlo simulation for read current and read power has been investigated using Cadence virtuoso tool with GPDK 45-nm technology.

scholarly journals Countermeasures against NBTI degradation on 6T-SRAM cells

2011 ◽  
Vol 9 ◽  
pp. 255-261 ◽  
Author(s):  
E. Glocker ◽  
D. Schmitt-Landsiedel ◽  
S. Drapatz
Keyword(s):  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Aging Effect ◽  
Static Random Access Memory ◽  
Negative Bias Temperature Instability ◽  
Access Memory ◽  
Bias Temperature Instability ◽  
Simulation Results ◽  
Degradation Effect

Abstract. In current process technologies, NBTI (negative bias temperature instability) has the most severe aging effect on static random access memory (SRAM) cells. This degradation effect causes loss of stability. In this paper countermeasures against this hazard are presented and quantified via simulations in 90 nm process technologies by the established metrics SNMread, SNMhold, Iread and Write Level. With regard to simulation results and practicability best candidates are chosen and, dependent on individual preferences at memory cell design, the best countermeasure in each case is recommended.

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