Analytical modeling and simulation of MEMS piezoresistive pressure sensors with a square silicon carbide diaphragm as the primary sensing element under different loading conditions

2018 ◽  
Vol 17 (4) ◽  
pp. 1780-1789 ◽  
Author(s):  
Sumit Kumar Jindal ◽  
Sai Pratyusha Magam ◽  
Maitreyi Shaklya
Keyword(s):  
Silicon Carbide ◽  
Modeling And Simulation ◽  
Analytical Modeling ◽  
Pressure Sensors ◽  
Loading Conditions ◽  
Sensing Element ◽  
Piezoresistive Pressure Sensors

Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour
Keyword(s):  
Thermal Behavior ◽  
Modeling And Simulation ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Thermal Drift ◽  
Piezoresistive Pressure Sensor ◽  
Output Characteristics ◽  
Piezoresistive Pressure Sensors

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.

Carbon Nano Tube-Based Sensor Design for NEMS/MEMS Applications

2020 ◽  
pp. 37-53
Author(s):  
Rekha Devi ◽  
Sandeep Singh Gill
Keyword(s):  
Mathematical Modeling ◽  
Modeling And Simulation ◽  
Design Process ◽  
Pressure Sensor ◽  
Pressure Range ◽  
Pressure Sensors ◽  
Sensor Design ◽  
Improved Performance ◽  
Piezoresistive Pressure Sensors ◽  
Carbon Nano Tube

This chapter deals with designing CNT-based piezoresistive pressure sensors with different boss sizes and with different configurations designed for low pressure range. The purpose for this work is to show a NEMS-based pressure sensor, which was analyzed by using ANSYS 17 software. The different combination of the diaphragm shows the improved performance of the pressure sensor in the case of CNT as compare to the silicon. This chapter is organized in sections, where section 2 discusses the review of CNT based MEMS/NEM design process and applications, Section 3 elaborates the use of CNT materials for design piezoresistive pressure sensors, Section 4 discusses mathematical modeling and simulation of CNT-based piezoresistive pressure sensors, Section 5 examines the results and discussion in terms of linearity and sensitivity of designed sensor, and Section 6 consummates the chapter with the conclusion.

CMOS-MEMS Based Current Mirror MOSFET Embedded Pressure Sensor for Healthcare and Biomedical Applications

2013 ◽  
Vol 647 ◽  
pp. 315-320 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar
Keyword(s):  
Pressure Sensor ◽  
Biomedical Applications ◽  
Circuit Simulation ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Cmos Technology ◽  
Current Mirror ◽  
Sensing Element ◽  
Pressure Sensing ◽  
Cmos Mems

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.

scholarly journals Cheating at Craps

2021 ◽  
Vol 48 (4) ◽  
pp. 53-61
Author(s):  
Andrea Marin ◽  
Carey Williamson
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Modeling And Simulation ◽  
Analytical Model ◽  
Quantitative Evaluation ◽  
Mathematical Analysis ◽  
Simulation Modeling ◽  
Analytical Modeling ◽  
The World ◽  
Simulation Results

Craps is a simple dice game that is popular in casinos around the world. While the rules for Craps, and its mathematical analysis, are reasonably straightforward, this paper instead focuses on the best ways to cheat at Craps, by using loaded (biased) dice. We use both analytical modeling and simulation modeling to study this intriguing dice game. Our modeling results show that biasing a die away from the value 1 or towards the value 5 lead to the best (and least detectable) cheating strategies, and that modest bias on two loaded dice can increase the winning probability above 50%. Our Monte Carlo simulation results provide validation for our analytical model, and also facilitate the quantitative evaluation of other scenarios, such as heterogeneous or correlated dice.

Ultrasensitive, flexible, and low-cost nanoporous piezoresistive composites for tactile pressure sensing

Nanoscale ◽  
2019 ◽  
Vol 11 (6) ◽  
pp. 2779-2786 ◽  
Author(s):  
Jing Li ◽  
Santiago Orrego ◽  
Junjie Pan ◽  
Peisheng He ◽  
Sung Hoon Kang
Keyword(s):  
Carbon Nanotube ◽  
Polymer Composites ◽  
Low Cost ◽  
Pressure Sensors ◽  
Nanoporous Carbon ◽  
Pressure Sensing ◽  
Etching Method ◽  
Piezoresistive Pressure Sensors

We report a facile sacrificial casting–etching method to synthesize nanoporous carbon nanotube/polymer composites for ultra-sensitive and low-cost piezoresistive pressure sensors.

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