Carbon Nano Tube-Based Sensor Design for NEMS/MEMS Applications

2020 ◽  
pp. 37-53
Author(s):  
Rekha Devi ◽  
Sandeep Singh Gill
Keyword(s):  
Mathematical Modeling ◽  
Modeling And Simulation ◽  
Design Process ◽  
Pressure Sensor ◽  
Pressure Range ◽  
Pressure Sensors ◽  
Sensor Design ◽  
Improved Performance ◽  
Piezoresistive Pressure Sensors ◽  
Carbon Nano Tube

This chapter deals with designing CNT-based piezoresistive pressure sensors with different boss sizes and with different configurations designed for low pressure range. The purpose for this work is to show a NEMS-based pressure sensor, which was analyzed by using ANSYS 17 software. The different combination of the diaphragm shows the improved performance of the pressure sensor in the case of CNT as compare to the silicon. This chapter is organized in sections, where section 2 discusses the review of CNT based MEMS/NEM design process and applications, Section 3 elaborates the use of CNT materials for design piezoresistive pressure sensors, Section 4 discusses mathematical modeling and simulation of CNT-based piezoresistive pressure sensors, Section 5 examines the results and discussion in terms of linearity and sensitivity of designed sensor, and Section 6 consummates the chapter with the conclusion.

Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour
Keyword(s):  
Thermal Behavior ◽  
Modeling And Simulation ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Thermal Drift ◽  
Piezoresistive Pressure Sensor ◽  
Output Characteristics ◽  
Piezoresistive Pressure Sensors

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.

Assembly and Testing of Surface Micromachined, Piezoresistive Polysilicon Pressure Sensors

1999 ◽  
Author(s):  
Todd F. Miller ◽  
David J. Monk ◽  
Gary O’Brien ◽  
William P. Eaton ◽  
James H. Smith
Keyword(s):  
Pressure Sensor ◽  
Microelectromechanical Systems ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
Surface Micromachining ◽  
Process Technology ◽  
Crystal Silicon ◽  
Noise Characteristics ◽  
Testing Techniques ◽  
Piezoresistive Pressure Sensors

Abstract Surface micromachining is becoming increasingly popular for microelectromechanical systems (MEMS) and a new application for this process technology is pressure sensors. Uncompensated surface micromachined piezoresistive pressure sensors were fabricated by Sandia National Labs (SNL). Motorola packaged and tested the sensors over pressure, temperature and in a typical circuit application for noise characteristics. A brief overview of surface micromachining related to pressure sensors is described in the report along with the packaging and testing techniques used. The electrical data found is presented in a comparative manner between the surface micromachined SNL piezoresistive polysilicon pressure sensor and a bulk micromachined Motorola piezoresistive single crystal silicon pressure sensor.

Design and Optimization of a Highly Sensitive and Linearity Piezoresistive Pressure Sensor Based on a Combination of Cross Beam-Peninsula-Membrane Structure

2017 ◽  
Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
High Sensitivity ◽  
Crystal Silicon ◽  
Nonlinearity Error ◽  
Trade Off ◽  
Design And Optimization ◽  
Piezoresistive Pressure Sensor ◽  
Piezoresistive Pressure Sensors

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.

scholarly journals Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1103
Author(s):  
Jae Sang Heo ◽  
Keon Woo Lee ◽  
Jun Ho Lee ◽  
Seung Beom Shin ◽  
Jeong Wan Jo ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Pressure Sensor ◽  
Pressure Range ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Low Pressure ◽  
Electronic Textiles ◽  
Carbon Nanotube Fiber ◽  
Cnt Fiber ◽  
Walled Carbon Nanotubes

Among various wearable health-monitoring electronics, electronic textiles (e-textiles) have been considered as an appropriate alternative for a convenient self-diagnosis approach. However, for the realization of the wearable e-textiles capable of detecting subtle human physiological signals, the low-sensing performances still remain as a challenge. In this study, a fiber transistor-type ultra-sensitive pressure sensor (FTPS) with a new architecture that is thread-like suspended dry-spun carbon nanotube (CNT) fiber source (S)/drain (D) electrodes is proposed as the first proof of concept for the detection of very low-pressure stimuli. As a result, the pressure sensor shows an ultra-high sensitivity of ~3050 Pa−1 and a response/recovery time of 258/114 ms in the very low-pressure range of <300 Pa as the fiber transistor was operated in the linear region (VDS = −0.1 V). Also, it was observed that the pressure-sensing characteristics are highly dependent on the contact pressure between the top CNT fiber S/D electrodes and the single-walled carbon nanotubes (SWCNTs) channel layer due to the air-gap made by the suspended S/D electrode fibers on the channel layers of fiber transistors. Furthermore, due to their remarkable sensitivity in the low-pressure range, an acoustic wave that has a very tiny pressure could be detected using the FTPS.

scholarly journals Efficient in-depth analysis and optimum design parameter estimation of MEMS capacitive pressure sensor utilizing analytical approach for square diaphragm

2021 ◽  
Author(s):  
SUMIT KUMAR JINDAL ◽  
ISHAN PATEL ◽  
KRISH SETHI ◽  
SIMRIT KAUL ◽  
SREEKANTH P K ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Optimal Operation ◽  
Design Parameters ◽  
Capacitive Pressure Sensor ◽  
Computationally Efficient ◽  
Analytical Technique ◽  
Operating Modes ◽  
Depth Analysis ◽  
Piezoresistive Pressure Sensors

Abstract Capacitive pressure sensors have become more popular as compared to piezoresistive pressure sensors as they yield superior sensitivity and lesser non-linearity. Efficient analysis for modelling capacitive pressure sensors is thus increasingly becoming more important due to their innumerable use cases. The higher sensitivity of square diaphragm for the same side length in comparison to circular diaphragm makes it ideal for sensor design. In this work, a complete formulation for analysis of capacitive pressure sensor with the square diaphragm in normal and touch mode operation has been presented as these two modes are established operating modes for these sensors. A comprehensive study of sensor parameters like capacitance, diaphragm deflection, capacitive and mechanical sensitivity has been formulated to aid the choice of sensor characteristics. This work also focuses on the method to determine core design parameters for optimal operation. Computationally complex methods have been used in the past for analysis of square diaphragms. In contrast to the finite element system, the analytical technique proposed in this study is less complex and computationally efficient (FEM). The results were computed and simulated using MATLAB.

scholarly journals Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

2021 ◽  
Author(s):  
Mikhail Basov ◽  
Denis Prigodskiy
Keyword(s):  
Pressure Sensor ◽  
Thermal Hysteresis ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Differential Pressure ◽  
Sensor Chip ◽  
Burst Pressure ◽  
Average Sensitivity ◽  
Optimum Geometry ◽  
Piezoresistive Pressure Sensors

Abstract The investigation of the pressure sensor chip’s design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a membrane has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/кPa/V at nonlinearity 2KNL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 кPa.

scholarly journals Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

2021 ◽  
Author(s):  
Mikhail ◽  
Denis Prigodskiy
Keyword(s):  
Automotive Industry ◽  
Pressure Sensor ◽  
Thermal Hysteresis ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Burst Pressure ◽  
Average Sensitivity ◽  
Optimum Geometry ◽  
Developed Pressure ◽  
Piezoresistive Pressure Sensors

The investigation of the pressure sensor chip's design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a diaphragm has been defined using available technological resources. The pressure sensor chip with an area of 6.15 × 6.15 mm has an average sensitivity S of 34.5 mV/ κPa/V at nonlinearity 2K NL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 κPa. The developed pressure sensor can be used in medicine, automotive industry and highly specialized scientific developments.

A resonant high-pressure sensor based on dual cavities

2021 ◽  
Vol 31 (12) ◽  
pp. 124002
Author(s):  
Jie Yu ◽  
Yulan Lu ◽  
Deyong Chen ◽  
Junbo Wang ◽  
Jian Chen ◽  
...  
Keyword(s):  
High Pressure ◽  
Temperature Sensitivity ◽  
Pressure Sensor ◽  
Pressure Range ◽  
High Vacuum ◽  
Pressure Sensors ◽  
Anodic Bonding ◽  
Temperature Range ◽  
Pressure Sensitive ◽  
Ocean Sciences

Abstract High-pressure sensors enable expansive demands in ocean sciences, industrial controls, and oil explorations. Successful sensor realized in piezoresistive high-pressure sensors which suffer from the key issue of compromised accuracies due to serious temperature drifts. Herein, this paper presents a high accuracy resonant high-pressure sensor with the pressure range of 70 MPa. Different from conventional resonant high-pressure sensor, the developed sensor utilized a dual-resonator-cavity design to minimize temperature disturbances and improve the pressure sensitivities. Besides, four circle cavities were used to maintain a high vacuum level for resonators after anodic bonding process. In details, Dual resonators, which is parallelly placed in the tensile and compressive stresses areas of a rectangular pressure sensitive diaphragm, are separated vacuum-packaged in the parallel dual cavities. Thus, pressure under measurement bends the pressure sensitive diaphragm, producing an increased pressure sensitivity and a decreased temperature sensitivity by the differential outputs of the dual resonators. Parameterized mathematical models of the sensor were established and the parameters of the models were optimized to adjust the pressure sensitivities and the temperature sensitivities of the sensor. Simplified deep reactive ion etching was used to form the sensing structure of the sensor and only once anodic bonding was used to form vacuum packaging for the dual resonators. Experimental results confirmed that the Q values of the resonators were higher than 32 000. Besides, the temperature sensitivity of the sensor was reduced from 44 Hz °C−1 (494 ppm °C−1) to 1 Hz °C−1 (11 ppm °C−1) by the differential outputs of the dual resonators in the temperature range of −10 °C–60 °C under the pressure of 1000 kPa. In addition, the accuracy of the sensor was better than 0.02% FS within the pressure range of 110–6500 kPa and the temperature range of −10 °C–60 °C by using a polynomial algorithm.

scholarly journals Sea urchin-like microstructure pressure sensors with an ultra-broad range and high sensitivity

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xiu-man Wang ◽  
Lu-qi Tao ◽  
Min Yuan ◽  
Ze-ping Wang ◽  
Jiabing Yu ◽  
...  
Keyword(s):  
Sea Urchin ◽  
Pressure Sensor ◽  
Pressure Range ◽  
Synergistic Effects ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Fast Response ◽  
Carbon Layer ◽  
Single Structure ◽  
Wide Pressure Range

AbstractSensitivity and pressure range are two significant parameters of pressure sensors. Existing pressure sensors have difficulty achieving both high sensitivity and a wide pressure range. Therefore, we propose a new pressure sensor with a ternary nanocomposite Fe2O3/C@SnO2. The sea urchin-like Fe2O3 structure promotes signal transduction and protects Fe2O3 needles from mechanical breaking, while the acetylene carbon black improves the conductivity of Fe2O3. Moreover, one part of the SnO2 nanoparticles adheres to the surfaces of Fe2O3 needles and forms Fe2O3/SnO2 heterostructures, while its other part disperses into the carbon layer to form SnO2@C structure. Collectively, the synergistic effects of the three structures (Fe2O3/C, Fe2O3/SnO2 and SnO2@C) improves on the limited pressure response range of a single structure. The experimental results demonstrate that the Fe2O3/C@SnO2 pressure sensor exhibits high sensitivity (680 kPa−1), fast response (10 ms), broad range (up to 150 kPa), and good reproducibility (over 3500 cycles under a pressure of 110 kPa), implying that the new pressure sensor has wide application prospects especially in wearable electronic devices and health monitoring.

Sign in / Sign up

Export Citation Format

Share Document