Tungsten work function engineering for dual metal gate nano-CMOS

2005 ◽  
Vol 16 (7) ◽  
pp. 433-436 ◽  
Author(s):  
J. K. Efavi ◽  
T. Mollenhauer ◽  
T. Wahlbrink ◽  
H. D. B. Gottlob ◽  
M. C. Lemme ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Dual Metal

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

2002 ◽  
Vol 81 (22) ◽  
pp. 4192-4194 ◽  
Author(s):  
Tae-Ho Cha ◽  
Dae-Gyu Park ◽  
Tae-Kyun Kim ◽  
Se-Aug Jang ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Dual Metal ◽  
Thermal Stability Of

Continuous and Precise Work Function Adjustment for Integratable Dual Metal Gate CMOS Technology Using Hf–Mo Binary Alloys

2005 ◽  
Vol 52 (6) ◽  
pp. 1172-1179 ◽  
Author(s):  
T.-L. Li ◽  
C.-H. Hu ◽  
W.-L. Ho ◽  
H.C.-H. Wang ◽  
C.-Y. Chang
Keyword(s):  
Work Function ◽  
Binary Alloys ◽  
Cmos Technology ◽  
Metal Gate ◽  
Dual Metal

Dual-Metal-Gate Transistors with Symmetrical Threshold Voltages Using Work-Function-Tuned Ta/Mo Bilayer Metal Gates

2008 ◽  
Vol 47 (4) ◽  
pp. 2428-2432 ◽  
Author(s):  
Takashi Matsukawa ◽  
Yongxun Liu ◽  
Kazuhiko Endo ◽  
Meishoku Masahara ◽  
Yuki Ishikawa ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Metal Gates ◽  
Threshold Voltages ◽  
Dual Metal

Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates

2007 ◽  
Author(s):  
T. Matsukawa ◽  
Y. X. Liu ◽  
K. Endo ◽  
M. Masahara ◽  
Y. Ishikawa ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Metal Gates ◽  
Threshold Voltages ◽  
Dual Metal

Tunable work function dual metal gate technology for bulk and non-bulk CMOS

2003 ◽  
Author(s):  
JaeHoon Lee ◽  
Huicai Zhong ◽  
You-Seok Suh ◽  
G. Heuss ◽  
J. Gurganus ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Dual Metal

Dual-Metal-Gate Work Function by Controlling Metal Gate Thickness and Composition

2008 ◽  
Vol 11 (5) ◽  
pp. H124 ◽  
Author(s):  
Musarrat Hasan ◽  
Hokyong Park ◽  
Joon-Myoung Lee ◽  
Hyunsang Hwang
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Dual Metal ◽  
Gate Work Function

scholarly journals Study of Work-Function Variation on Performance of Dual-Metal Gate Fin Field-Effect Transistor

2020 ◽  
Author(s):  
Tianyu Yu ◽  
Liang Dai ◽  
Zhifeng Zhao ◽  
Weifeng Lyu ◽  
Mi Lin
Keyword(s):  
Work Function ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Gate ◽  
Statistical Fluctuations ◽  
Effect Transistor ◽  
Dual Metal ◽  
Aided Design ◽  
The Impact

The impact of work-function variation (WFV) on performance of an inversion-mode (IM) dual-metal gate (DMG) fin field-effect transistor (FinFET) was investigated for the first time. The statistical fluctuations induced by WFV on the threshold-voltage (VTH), transconductance (gm), and subthreshold slope (SS) were demonstrated and estimated utilizing a 3D technology computer-aided design (TCAD) simulator. We found that the performance variations of the DMG FinFET were affected by two different metals near the drain and near the source, respectively. Additionally, this effect of the two metals on the channel was not monotonic with the length of the channel of their own control. Our work fills a gap in the study of WFV for a DMG IM FinFET and provides a reference for optimizing the distribution of the two metals.

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