scholarly journals Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling

2020 ◽  
Vol 31 (20) ◽  
pp. 17892-17902
Author(s):  
Karolina Piętak ◽  
Sebastian Złotnik ◽  
Ewelina Rozbiegała ◽  
Paweł P. Michałowski ◽  
Marek Wójcik ◽  
...  
Keyword(s):  
Structural Changes ◽  
Depth Profiling ◽  
Elemental Distribution ◽  
Structural Examination ◽  
Aluminium Gallium Nitride ◽  
Different Temperatures ◽  
P Diffusion ◽  
Bandgap Semiconductors ◽  
P Type ◽  
Mg Doped

AbstractPhosphorus introduction into Mg-doped aluminium gallium nitride ((Al)GaN) epilayers to enhance the acceptor activation is a possible strategy for a p-type conductivity improvement in III-nitride wide-bandgap semiconductors. To date, P-implanted Mg-doped (Al)GaN structures have not been systematically evaluated, regarding structural verification and elemental distribution. Here, comprehensive studies of P ions impact on structural degradation are presented. Furthermore, a post-implantation annealing conducted at different temperatures is examined as well. The results demonstrated that the structural changes in the examined compounds, namely GaN and Al0.1Ga0.9N, due to P implantation and a subsequent recovery by thermal annealing follow similar trends. Interestingly, it was revealed that P diffusion length is higher in AlGaN than in GaN, possibly due to higher oxygen content in Al-containing compounds, analogous to Mg dopant. Additionally, the initial Mg concentration in (Al)GaN is crucial because too high Mg doping could be the main cause of electrical properties degradation of (Al)GaN heterostructures after P ion implantation.

Heat Treatment Influence on the Corrosion Resistance of a Cu-Al-Fe-Mn Bronze

2018 ◽  
Vol 69 (5) ◽  
pp. 1055-1059 ◽  
Author(s):  
Mariana Ciurdas ◽  
Ioana Arina Gherghescu ◽  
Sorin Ciuca ◽  
Alina Daniela Necsulescu ◽  
Cosmin Cotrut ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Corrosion Resistance ◽  
Structural Changes ◽  
Heating Temperature ◽  
Galvanic Corrosion ◽  
Cooling Water ◽  
Open Circuit ◽  
Water Quenching ◽  
Heat Treated ◽  
Different Temperatures

Aluminium bronzes are exhibiting good corrosion resistance in saline environments combined with high mechanical properties. Their corrosion resistance is obviously confered by the alloy chemical composition, but it can also be improved by heat treatment structural changes. In the present paper, five Cu-Al-Fe-Mn bronze samples were subjected to annealing heat treatments with furnace cooling, water quenching and water quenching followed by tempering at three different temperatures: 200, 400 and 550�C. The heating temperature on annealing and quenching was 900�C. The structure of the heat treated samples was studied by optical and scanning electron microscopy. Subsequently, the five samples were submitted to corrosion tests. The best resistance to galvanic corrosion was showed by the quenched sample, but it can be said that all samples are characterized by close values of open-circuit potentials and corrosion potentials. Concerning the susceptibility to other types of corrosion (selective leaching, pitting, crevice corrosion), the best corrosion resistant structure consists of a solid solution, g2 and k compounds, corresponding to the quenched and 550�C tempered sample.

Electronic transport in p-type Mg-doped GaAs nanowires

2016 ◽  
Vol 253 (10) ◽  
pp. 1960-1964 ◽  
Author(s):  
N. Cifuentes ◽  
H. Limborço ◽  
E. R. Viana ◽  
D. B. Roa ◽  
A. Abelenda ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Gaas Nanowires ◽  
P Type ◽  
Mg Doped

scholarly journals Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1435
Author(s):  
Kaneez Fatima ◽  
Hadia Noor ◽  
Adnan Ali ◽  
Eduard Monakhov ◽  
Muhammad Asghar
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Silicon Germanium ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
The Past ◽  
High Power Factor ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

Structural, electrical and optical properties of Mg-doped CuAlO2 films by pulsed laser deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (78) ◽  
pp. 41294-41300 ◽  
Author(s):  
Y. S. Zou ◽  
H. P. Wang ◽  
S. L. Zhang ◽  
D. Lou ◽  
Y. H. Dong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Band Gaps ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Optical Band Gaps ◽  
P Type ◽  
Enhanced Conductivity ◽  
Mg Doped

P-type Mg doped CuAlO2 films with high crystallinity are prepared by pulsed laser deposition followed by annealing, and exhibit enhanced conductivity and tunable optical band gaps.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

2015 ◽  
Vol 106 (22) ◽  
pp. 222103 ◽  
Author(s):  
Erin C. H. Kyle ◽  
Stephen W. Kaun ◽  
Erin C. Young ◽  
James S. Speck
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Mg Doped

Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation

2005 ◽  
Vol 44 (4A) ◽  
pp. 1726-1729 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Zhca-Yong Lai ◽  
Ching-Yuan Wu ◽  
Shoou-Jinn Chang
Keyword(s):  
Nitrogen Plasma ◽  
Type Conductivity ◽  
Plasma Activation ◽  
P Type ◽  
Mg Doped

Research of Different Noise Barriers Efficiency at Different Temperature

2017 ◽  
Author(s):  
Tomas Vilniškis ◽  
Tomas Januševicius
Keyword(s):  
Air Temperature ◽  
Noise Level ◽  
Structural Changes ◽  
Field Measurements ◽  
Sound Waves ◽  
Noise Barriers ◽  
Different Temperatures ◽  
Noise Measurements ◽  
Noise Barrier ◽  
Key Aspects

In this article was analyzed acoustic efficiency of two different construction noise barriers. Field measurements of noise tests were carried out before and behind a wooden barrier, which height was 2.9 meters and a wooden wall with equipped roof, which height was 3.2 m. As is known the length of the wall, height, surface roughness, shape and material of the wall – key aspects of determining the effectiveness of noise barrier. Different materials, depending on their characteristics of the hard or soft, porous or dense, interact differently with the sound of waves. Article contains research results of noise measurements at positive and negative air temperature. There analyzing wooden noise barrier acoustic efficiency at different temperatures and the effects of temperature to the diffraction of sound waves through the peak of the barrier. Test results show, that noise barrier without structural changes reduced noise level to 14–22 dB, noise barrier with structural changes reduced noise level to 20–23,1 dB, when air temperature was positive. When air temperature was negative, noise barrier without structural changes reduced noise level to 15,5–21,4 dB, noise level with structural changes to 19–26,6 dB.

Investigation of Vacancies in GaN by Positron Annihilation

1996 ◽  
Vol 449 ◽  
Author(s):  
L. V. JØrgensen ◽  
A. C. Kruseman ◽  
H. Schut ◽  
A. Van Veen ◽  
M. Fanciulli ◽  
...  
Keyword(s):  
Positron Beam ◽  
High Resistivity ◽  
S Parameter ◽  
Yield Information ◽  
Beam Analysis ◽  
Core Electrons ◽  
P Type ◽  
Coincidence Measurements ◽  
Higher Sensitivity ◽  
Mg Doped

ABSTRACTPositron beam analysis has been performed on autodoped n-type, semi-insulating and Mg doped p-type epitaxially grown layers of GaN on sapphire. Doppler Broadening measurements clearly indicate the presence of vacancies in the intrinsically autodoped n-type GaN by an increase in the annihilation Doppler lineshape S-parameter of 1.04 relative to the value for the high resistivity sample. This value is typical for vacancy-type defects in compound semiconductors such as GaAs. Results of experiments with higher sensitivity to core-electrons are also presented. These two detector coincidence measurements yield information on the chemical environment surrounding the vacancies. The results are consistent with the presence of Ga vacancies in the autodoped n-type sample.

scholarly journals The Effect of Sintering Temperature on the Barrier Height of p-type PtSi Schottky Diodes

1991 ◽  
Vol 44 (1) ◽  
pp. 67 ◽  
Author(s):  
Vincent WL Chin ◽  
Stephen M Newbery ◽  
John WV Storey ◽  
Ulrich Theden
Keyword(s):  
Barrier Height ◽  
Sintering Temperature ◽  
Schottky Diodes ◽  
Consistent Difference ◽  
Two Samples ◽  
Different Temperatures ◽  
P Type

The effect of sintering temperature on the barrier height of p-type PtSi Schottky diodes is studied by electrical and infrared photoresponse methods. It is revealed that there is a consistent difference of about 0�06 eV for two samples sintered at different temperatures.

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