The Effect of Sintering Temperature on the Barrier Height of p-type PtSi Schottky Diodes

The effect of sintering temperature on the barrier height of p-type PtSi Schottky diodes is studied by electrical and infrared photoresponse methods. It is revealed that there is a consistent difference of about 0�06 eV for two samples sintered at different temperatures.

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Comparative Study of Temperature Dependent Barrier Heights of Pd/ZnO Schottky Diodes Grown along Zn- and O-Faces

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.510-511.265 ◽

2012 ◽

Vol 510-511 ◽

pp. 265-270 ◽

Cited By ~ 3

Author(s):

M. Asghar ◽

Khalid Mahmood ◽

Adnan Ali ◽

M.A. Hasan

Keyword(s):

Barrier Height ◽

Deep Level ◽

Schottky Diodes ◽

Thermionic Emission ◽

Growth Conditions ◽

Distribution Model ◽

Metal Contacts ◽

Temperature Dependent ◽

Barrier Heights ◽

Two Samples

In this study, the effect of polar face on Schottky barrier diodes has been investigated. Two samples of ZnO were grown hydrothermally under similar growth conditions. The Palladium (Pd) metal contacts of area 0.78 mm2were fabricated on both faces and were studied comprehensively using DLS-83 Deep Level Spectrometer over temperature range of 160K330K. The current-voltage (IV) measurements revealed that the ideality factor n and barrier height ϕBwere strongly temperature dependent for both faces (Zn and O-face) of ZnO, indicating that the thermionic emission is not the dominant process, which showed the inhomogenity in the barrier heights of grown samples. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear ϕapverses n plot to n = 1 has given a homogeneous barrier height of approximately 0.88±0.01 eV and 0.76±0.01 eV for Zn and O-faces respectively. ϕapversus 1/T plot was drawn to obtain the values of mean barrier height for Zn and O-face (0.88±0.01 eV, 0.76±0.01 eV) and standard deviation (δs) (0.015±0.001 V, 0.014±0.001 V) at zero bais respectively. The value of δsfor the Zn-face is larger than O-face, showing that inhomogenity in the barrier heights is more in the sample grown along Zn-face as compared to the sample grown along O-face.

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Schottky Diodes on Si1-x-yGexCy Alloys.

MRS Proceedings ◽

10.1557/proc-379-137 ◽

1995 ◽

Vol 379 ◽

Cited By ~ 4

Author(s):

M. Mamnor ◽

C. Guedj ◽

P. Boucaud ◽

F. Meyer ◽

D. Bouchier ◽

...

Keyword(s):

Band Gap ◽

Barrier Height ◽

Strain Relaxation ◽

Schottky Diodes ◽

Chemical Vapor ◽

Schottky Barriers ◽

X Ray Diffraction ◽

Germanium Content ◽

Hole Effective Mass ◽

P Type

ABSTRACTWe have recently investigated the properties of W/Si1-xGex films prepared by rapid thermal chemical vapor deposition (RTCVD). The barrier height on p-type, ΦBp, varies as the band gap with the germanium content for totally relaxed films, and increases with strain relaxation, while that on n-type remains rather constant. These results suggest that the Fermi level is pinned relative to the conduction band at the interface of the binary alloy and that the measurement of Schottky barriers is a suitable tool to follow band gap variations. In this work, the effects of carbon incorporation on Schottky barriers have been investigated. The study has been performed on Si1-x-yGexCy films (0≤y≤1.35% with x=10%). The strain retained in the films was determined by X-ray diffraction. Infrared absorption measurements have shown that the carbon is incorporated on substitutional sites. The electrical results indicate the same trends than those observed on the binary alloys, the barrier height on n-type remains rather constant while the barrier height on p-type varies. Adding C leads to an increase of ΦBp, but this increase is too large to be explained in terms of variation of the band gap. The influence of other parameters, such as the doping level and the hole effective mass is discussed.

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Numerical study of barrier height enhancement in n-In0.35Ga0.65As Schottky diodes using a p-type near-interface layer

physica status solidi (c) ◽

10.1002/pssc.200306256 ◽

2003 ◽

Vol 0 (3) ◽

pp. 928-932 ◽

Cited By ~ 3

Author(s):

J. Osvald

Keyword(s):

Barrier Height ◽

Numerical Study ◽

Schottky Diodes ◽

Interface Layer ◽

P Type

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W/Si Schottky Diodes: Effect of Metal Deposition Conditions on the Barrier Height

MRS Proceedings ◽

10.1557/proc-356-149 ◽

1994 ◽

Vol 356 ◽

Cited By ~ 5

Author(s):

M. Mamor ◽

E. Finkman ◽

F. Meyer ◽

K. Bouziane

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Schottky Diodes ◽

X Ray Diffraction ◽

Experimental Conditions ◽

X Ray ◽

Barrier Heights ◽

P Type ◽

Deposition Conditions

AbstractThe Schottky barrier heights (ΦB) for W/Si Schottky diodes have been determined from I–V measurements. The effects of the sputter deposition conditions of the W-films were studied. X-ray diffraction was used to examine the structure and the lattice parameters of the W-films while the stress was determined by using a profilometer from the measurement of the curvature of the substrate after metallization. The resistivity is determined by using a four-point probe. A compressive-to-tensile stress transition is associated with the transformation of the ±—W-phase into the (β—W-phase as the working gas pressure is increased. These effects, which are frequently observed, coïncide with a significant increase of the W-film resistivity and a change (△ΦB≈50 meV) in the Schottky barrier height on n-type. On the other hand, the barrier height on the p-type remains constant under all the experimental conditions investigated. These results are discussed in terms of effects of strain and structure of W-films on the work function of the W, as well as in terms of modification of the pinning position of the Fermi level or else change in the value of the Richardson constant.

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Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.737 ◽

2005 ◽

Vol 483-485 ◽

pp. 737-740 ◽

Cited By ~ 3

Author(s):

Francesco Moscatelli ◽

Andrea Scorzoni ◽

Antonella Poggi ◽

Mariaconcetta Canino ◽

Roberta Nipoti

Keyword(s):

Barrier Height ◽

Schottky Barrier Height ◽

Annealing Temperature ◽

Schottky Diodes ◽

Contact Resistivity ◽

Emission Model ◽

A Value ◽

Transmission Line Method ◽

P Type ◽

Ion Implanted

Recently Ni/SiC contacts have been studied in order to achieve very low contact resistivity (rc) values on n-type SiC. In this work contact resistivity values of Ni-silicide contacts to n-type ion implanted 6H-SiC are analyzed aiming at extracting the Schottky Barrier Height (SBH). The n-type ion implanted 6H-SiC specimens were annealed at 1300, 1500, 1650°C for 20 min in a high purity Ar ambient. The rc values have been extracted from Transmission Line Method (TLM) measurements in the range of temperatures 25-290°C. The rc values are in the range 1-5×10-5 Wcm2 depending on the annealing temperature. The SBH fBn has been extracted by exploiting the dependence of the contact resistivity on the temperature. By using the field emission model, the value obtained for fBn on our samples is in the range 1.1-1.3 eV depending on the annealing temperature. The SBH on p-type 6H-SiC has been evaluated on Schottky diodes by means of both IV and C-V measurements. A value of qfBp= (1.75±0.05) eV has been obtained on p-type SiC through the C-V method. The average SBH extracted from I-V data collected at room temperature is (1.19±0.03) eV and this value increases as a function of the temperature until (1.50±0.01) eV at 290°C. Differences between values of SBH extracted from I−V and from C−V measurements are explained in terms of inhomogeneous barrier height

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THE EFFECT OF NANO AND MICRO POROSITY ON THE SCHOTTKY BARRIER HEIGHT AND IDEALITY FACTOR IN THE I–V CHARACTERISTICS OF PtSi/p-Si IR DETECTOR

Modern Physics Letters B ◽

10.1142/s0217984909017984 ◽

2009 ◽

Vol 23 (05) ◽

pp. 765-771

Author(s):

H. ESHGHI ◽

M. MOHAMMADI

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Ideality Factor ◽

Schottky Barrier Height ◽

Thermionic Emission ◽

Ir Detector ◽

Current Voltage ◽

Two Samples ◽

P Type ◽

Silicon Interface

In this paper, the effect of porosity on reverse bias current–voltage characteristics of PtSi/por - Si (p-type) IR detector as a function of temperature is investigated. Our experimental data for two samples with different porosities (50% and 10%) at 300 K and 77 K are reported by Raissi et al.1 These data indicates a breakdown-like behavior. Our analytical model is based on hole thermionic emission with large ideality factor (n ≈ 200). Our calculations show that at each temperature, the Schottky barrier height, as well as the ideality factor, in sample with 10% porosity is bigger than that of 50%. These variations could be due to band gap variations of Si size effect using quantum dot model, and the presence of the relatively high (~1015 cm-2 eV-1) density of states at the silicide/por-silicon interface, respectively.

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I-VCharacteristics of PtxCo1−x(x= 0.2, 0.5, and 0.7) Thin Films

Journal of Nanomaterials ◽

10.1155/2013/579131 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6

Author(s):

M. Erkovan ◽

E. Şentürk ◽

Y. Şahin ◽

M. Okutan

Keyword(s):

Thin Films ◽

Barrier Height ◽

Ideality Factor ◽

Photoelectron Spectroscopy ◽

Schottky Diodes ◽

Thermionic Emission ◽

Native Oxide ◽

Analysis Technique ◽

Current Voltage ◽

P Type

Three different chemical ratios of PtxCo1−xthin films were grown on p-type native oxide Si (100) by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V) measurements of metal-semiconductor (MS) Schottky diodes were carried out at room temperature. From theI-Vanalysis of the samples, ideality factor (n), barrier height (ϕ), and contact resistance values were determined by using thermionic emission (TE) theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from theI-Vcharacteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

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