Novel polyethersulfone dielectric films with high temperature resistance, intrinsic low dielectric constant and low dielectric loss

2020 ◽  
Author(s):  
Zejun Pu ◽  
Jialing Xia ◽  
Xueyu Liu ◽  
Qi Wang ◽  
Jingyue Liu ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Temperature ◽  
Dielectric Loss ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Temperature Resistance ◽  
Low Dielectric ◽  
High Temperature Resistance

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Photosensitive Polyimide having low loss tangent for RF application

2018 ◽  
Vol 2018 (1) ◽  
pp. 000476-000482 ◽  
Author(s):  
Masao Tomikawa ◽  
Hitoshi Araki ◽  
Yohei Kiuchi ◽  
Akira Shimada
Keyword(s):  
Molecular Structure ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
High Frequency ◽  
Low Dielectric Constant ◽  
Low Loss ◽  
Elongation At Break ◽  
Low Dielectric ◽  
The Poor

Abstract Progress of 5G telecommunication and mm radar for autopilot, high frequency operation is required. Insulator materials having low loss at high frequency is desired for the applications. We designed the low dielectric constant, and low dielectric loss materials examined molecular structure of the polyimide and found that permittivity 2.6 at 20GHz, dielectric loss 0.002. Furthermore, in consideration of mechanical properties such as the toughness and adhesion to copper from a point of practical use. Dielectric properties largely turned worse when giving photosensitivity. To overcome the poor dielectric properties, we designed the photosensitive system. After all, we successfully obtained 3.5 of dielectric constant and 0.004 of dielectric loss, and 100% of elongation at break. In addition, we offered a B stage sheet as well as varnish. These materials are applicable to re-distribution layer of FO-WLP, Interposer and other RF applications for microelectronics.

scholarly journals Materials with low dielectric constant and loss and good thermal properties prepared by introducing perfluorononenyl pendant groups onto poly(ether ether ketone)

RSC Advances ◽  
2018 ◽  
Vol 8 (14) ◽  
pp. 7753-7760 ◽  
Author(s):  
Handong Sun ◽  
Yunxia Lv ◽  
Chongyang Zhang ◽  
Xiaodan Zuo ◽  
Mengzhu Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Thermal Properties ◽  
Dielectric Loss ◽  
Polymer Chain ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Dielectric Constant And Loss ◽  
Ether Ether Ketone ◽  
Poly Ether Ether Ketone ◽  
Ether Ketone

Introducing long carbon–fluorine bonds into the polymer chain produced comb-shaped PEEK possessing a low dielectric constant (2.73) and low dielectric loss (3.00 × 10−3).

Ultra Low-dielectric-constant Materials for 65nm Technology Node and Beyond

2004 ◽  
Vol 812 ◽  
Author(s):  
Hao Cui ◽  
Darren Moore ◽  
Richard Carter ◽  
Masaichi Eda ◽  
Peter Burke ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Plasma Damage ◽  
Pore Characteristics ◽  
Hydrogenated Silicon ◽  
Bonding Structure ◽  
Low Dielectric ◽  
Etch Stop ◽  
Low Dielectric Constant Materials

AbstractPore characteristics including pore size distribution, porosity, and pore interconnectivity of PECVD SiCOH inter- layer dielectric (ILD) materials with different dielectric constant (κ) values have been studied. Oxygen plasma damage to SiCOH low-κ films increases dramatically as the κ value decreases. Simulations showed that, compared to the ILD film, the overhead dielectric films have a significant impact on the overall effective κ (κeff) of the BEOL interconnects. Reducing the κ values of these overhead films helps to alleviate the pressure on the κ value requirement of the ILD materials while still meeting the κeff target. Ultra low-κ (ULK) PECVD hydrogenated silicon carbide (H:SiC) films with a κ of 3.0 have been studied for the etch-stop applications. Studies of the chemical composition and bonding structure suggest that less Si-C networκs are formed and more micro-porosity are incorporated in the ULK H:SiC film. The leakage current of the ULK H:SiC film is found to be about 5 times lower than the H:S iC and H:SiCN films with higher κ values. The etch rate of ULK H:SiC film using a standard SiCOH ILD etch chemistry has been found to be negligible. Such an extremely high etch selectivity maκes these films very good etch-stop layers.

Influence of MgO Content on Microstructure and Dielectric Properties in (BaSr)TiO3 Ceramics

2007 ◽  
Vol 280-283 ◽  
pp. 85-88
Author(s):  
Lin Hu ◽  
He Ping Zhou ◽  
Hao Xue ◽  
Chun Lai Xu
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Low Dielectric Constant ◽  
Microwave Technology ◽  
Phased Array Antennas ◽  
Strontium Titanium Oxide ◽  
Low Dielectric ◽  
Barium Strontium ◽  
High Dielectric

Barium strontium titanium oxide (BSTO) has great advantages and potentiality for the application of microwave technology. In order to be used in phased array antennas, high dielectric tunability, relatively low dielectric constant and low dielectric loss are required. In this paper, MgO was mixed into BSTO and the microstructure and dielectric properties of MgO-mixed BSTO bulk ceramics were investigated. The mole ratio of Ba and Sr was rather fixed to 5:5 in this study. It is observed that a small amount of MgO (5 wt%) has gone beyond the solubility limits of Mg in BSTO. The dielectric constant and dielectric loss of BSTO ceramics decreased with the increase of the content of MgO mixed. However, the tunability of MgO-mixed BSTO ceramics decreased at the same time. 20wt% MgO-mixed BSTO ceramics exhibits preferable dielectric properties with acceptable tunability.

Preparation and unique dielectric properties of nanoporous materials with well-controlled closed-nanopores

2016 ◽  
Vol 18 (28) ◽  
pp. 19183-19193 ◽  
Author(s):  
Cuijiao Zhao ◽  
Xiaonan Wei ◽  
Yawen Huang ◽  
Jiajun Ma ◽  
Ke Cao ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Porous Structure ◽  
Barrier Properties ◽  
Nanoporous Materials ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
High Dielectric Loss ◽  
High Dielectric

Although general porous materials have a low dielectric constant, their uncontrollable opened porous structure results in high dielectric loss and poor barrier properties, thus limiting their application as interconnect dielectrics.

Recovering Dielectric Loss of Low Dielectric Constant Organic Siloxane during the Photoresist Removal Process

2002 ◽  
Vol 149 (8) ◽  
pp. F81 ◽  
Author(s):  
T. C. Chang ◽  
Y. S. Mor ◽  
P. T. Liu ◽  
T. M. Tsai ◽  
C. W. Chen ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Low Dielectric Constant ◽  
Removal Process ◽  
Low Dielectric
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