The Effect of Focusing on the Lateral Resolution of an Interference Microscope

2014 ◽  
Vol 57 (1) ◽  
pp. 69-73 ◽  
Author(s):  
G. G. Levin ◽  
N. N. Moiseev ◽  
Ya. A. Ilyushin ◽  
V. L. Minaev
2013 ◽  
Vol 56 (5) ◽  
pp. 486-491 ◽  
Author(s):  
G. G. Levin ◽  
G. N. Vishnyakov ◽  
N. N. Moiseev ◽  
V. L. Minaev

2017 ◽  
Vol 870 ◽  
pp. 34-40
Author(s):  
Evgeny V. Sysoev ◽  
Yuri V. Chugui ◽  
Rodion V. Kulikov ◽  
Ignat A. Vykhristyuk ◽  
Liang Chia Chen ◽  
...  

As is well known, the phase-shifting interferometry techniques allow to reach longitudinal resolution to ~ 0.1 nm, but the value of lateral resolution remains at the level of ~ 1 mm. For providing of high lateral resolution of linear measurements in the interference microscope profilometer it was proposed to use a position detection sensor of sharp edge. Principle of sensor’s measurement is based on registration of laser spot intensity scattered by the measurement sample surface under displacement of sample in the lateral direction. The paper shows the prototype scheme of measurement system containing the Linnik interferometer used for surface nanorelief measurement and a position detection module of sharp edge. Measurement process and experimental results are presented. The combining of measurement results performed by the Linnik interferometer and a position detection sensor of sharp edge can allow us to precisely (better then diffraction limit) define the position of sharp edge on the reconstructed surface nanorelief.


Author(s):  
H.J. Dudek

The chemical inhomogenities in modern materials such as fibers, phases and inclusions, often have diameters in the region of one micrometer. Using electron microbeam analysis for the determination of the element concentrations one has to know the smallest possible diameter of such regions for a given accuracy of the quantitative analysis.In th is paper the correction procedure for the quantitative electron microbeam analysis is extended to a spacial problem to determine the smallest possible measurements of a cylindrical particle P of high D (depth resolution) and diameter L (lateral resolution) embeded in a matrix M and which has to be analysed quantitative with the accuracy q. The mathematical accounts lead to the following form of the characteristic x-ray intens ity of the element i of a particle P embeded in the matrix M in relation to the intensity of a standard S


Author(s):  
R. J. Wilson ◽  
D. D. Chambliss ◽  
S. Chiang ◽  
V. M. Hallmark

Scanning tunneling microscopy (STM) has been used for many atomic scale observations of metal and semiconductor surfaces. The fundamental principle of the microscope involves the tunneling of evanescent electrons through a 10Å gap between a sharp tip and a reasonably conductive sample at energies in the eV range. Lateral and vertical resolution are used to define the minimum detectable width and height of observed features. Theoretical analyses first discussed lateral resolution in idealized cases, and recent work includes more general considerations. In all cases it is concluded that lateral resolution in STM depends upon the spatial profile of electronic states of both the sample and tip at energies near the Fermi level. Vertical resolution is typically limited by mechanical and electronic noise.


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