Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process

2001 ◽  
Vol 30 (12) ◽  
pp. 1520-1526 ◽  
Author(s):  
A. K. Sikder ◽  
Frank Giglio ◽  
John Wood ◽  
Ashok Kumar ◽  
Mark Anthony
Keyword(s):  
Silicon Dioxide ◽  
Tribological Properties ◽  
Chemical Mechanical Planarization ◽  
Planarization Process

Effect of Tribological Properties of Undoped and Florine-Doped Silicon Di-Oxide Fims on Chemical Mechanical Planarization Process

2001 ◽  
Vol 697 ◽  
Author(s):  
A.K. Sikder ◽  
S. Thagella ◽  
U.C. Bandugilla ◽  
Ashok Kumar
Keyword(s):  
Tribological Properties ◽  
Chemical Mechanical Planarization ◽  
Critical Role ◽  
Successful Implementation ◽  
Emission Signal ◽  
Doped Silicon ◽  
The Coefficient Of Friction ◽  
Planarization Process ◽  
Silica Slurry ◽  
Physical Phenomena

AbstractChemical mechanical planarization (CMP) occurs at an atomic level at the slurry/wafer interface and hence slurries and the interaction of the films and polishing pads play a critical role in the successful implementation of this process. Understanding the tribological properties of a dielectric layer in the CMP process is critical for successful evaluation and implementation of the materials. In this paper, we present the effect of tribological properties of undoped and florine doped silicon dioxide films on their CMP process. A micro-CMP tester was used to study the fundamental aspects of CMP process. We have studied the CMP process of oxides on polyurethane pads (IC1000-B4/SubaIV) with colloidal silica slurry at different conditions. The coefficient of friction (COF) and acoustic emission signal was monitored during process. The COF was measured during the process and was found to varies differently for different samples and with down force and platen roatation. The effects of machine's parameters on the polishing performance and correlation of physical phenomena with the process has been discussed.

In-Situ Tribological Properties Monitoring and Chemical Mechanical Characterization of Planarization Process

2004 ◽  
Author(s):  
Arun Sikder ◽  
Norm Gitis ◽  
Michael Vinogradov ◽  
Antanas Daugela
Keyword(s):  
Integrated Circuits ◽  
Tribological Properties ◽  
Chemical Mechanical Planarization ◽  
Signal Propagation ◽  
Emission Data ◽  
Severe Problem ◽  
Lower Dielectric Constant ◽  
Planarization Process ◽  
Low K

For faster signal propagation in integrated circuits, new materials with lower dielectric constant (low-k) values are required with copper metal lines. Although integration of low-k materials (k<3.0) has been demonstrated, but ultra low-k materials possess many challenges due to their poor mechanical integrity and weak adhesion to other interconnects. During chemical mechanical planarization (CMP) generation of several defects including delamination of low-k materials is severe problem in the integration of these materials. Different slurries and pad introduces different levels of defect and also batch-to-batch variation in consumables is often makes process more difficult. In this study we have investigated the tribological properties of CMP pad and wafer interface while monitoring coefficient of friction and acoustic emission data. Signals are analyzed in order to online defect monitoring, batch-to-batch consumable variations and different consumables effects.

Detection of Surface Response to Chemical/Mechanical Planarization of Silica Films

1992 ◽  
Vol 260 ◽  
Author(s):  
Jeffrey A. Trogolo ◽  
Krishna Rajan
Keyword(s):  
Electron Microscopy ◽  
Silicon Dioxide ◽  
Structural Changes ◽  
Chemical Mechanical Planarization ◽  
Film Surface ◽  
Structural Effects ◽  
Silica Films ◽  
Transmission Electron ◽  
Device Processing ◽  
Planarization Process

ABSTRACTChemical/mechanical (C/M) planarization is a technique that has received attention lately due to the industry-wide trend toward multilevel device processing. In most multilevel schemes, the most commonly planarized layer is the interlevel dielectric, usually an oxide. In order to understand the response of this oxide layer to the planarization process, the authors have addressed the issues of chemical and structural effects of C/M planarization on silicon dioxide films. Transmission electron microscopy (TEM) and Fourier transformed infrared (FTIR) spectroscopy were used to examine the films and revealed that there are chemical and structural changes that occur within 200 nm of the film surface.

Investigation of cu-BTA complex formation during Cu chemical mechanical planarization process

2016 ◽  
Vol 384 ◽  
pp. 505-510 ◽  
Author(s):  
Byoung-Jun Cho ◽  
Shohei Shima ◽  
Satomi Hamada ◽  
Jin-Goo Park
Keyword(s):  
Complex Formation ◽  
Chemical Mechanical Planarization ◽  
Planarization Process

Note: Evaluation of slurry particle size analyzers for chemical mechanical planarization process

2016 ◽  
Vol 87 (4) ◽  
pp. 046101 ◽  
Author(s):  
Sunjae Jang ◽  
Atul Kulkarni ◽  
Hongyi Qin ◽  
Taesung Kim
Keyword(s):  
Particle Size ◽  
Chemical Mechanical Planarization ◽  
Planarization Process
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