Thickness Effect of Nb-Doped TiO2 Transparent Conductive Oxide Grown on Glass Substrates Fabricated by RF Sputtering

AbstractTransparent conductive oxide (TCO) thin films are extensively used in display industry and they can be utilized for flexible displays. The polymer and the plastic materials used as flexible substrates are more bendable and lighter weight compared to glass substrates. However, its mechanical and surface properties differed from glass substrates result in different quality of TCO layers deposited on it. In this study, Polyethylene Terephthalate (PET) and glass were used as substrates. Indium Tin Oxide (ITO), Zinc Oxide (ZnO), Mg-doped ZnO (MZO), Al-doped ZnO (AZO), Ga-doped ZnO (GZO), Al-doped MZO (AMZO), Ga-doped MZO (GMZO) were used as TCO materials deposited by RF sputtering. Rutherford Backscatter Spectroscopy (RBS) and X-Ray Diffraction (XRD) were used to analyze the chemical composition and crystal structure of TCO thin films. Light transmittance and surface resistivity were measured after the different deposited conditions. , Mg-, Al-, Ga- doped ZnO indeed modified the optical properties of ZnO and better than ITO. However, the electrical conductivity was not improved obviously compared to ITO when they deposited on PET substrate at room temperature.

Download Full-text

Development of a highly transparent, low-resistance lithium-doped nickel oxide triple-layer film deposited by magnetron sputtering

Chemical Communications ◽

10.1039/c6cc08738h ◽

2017 ◽

Vol 53 (10) ◽

pp. 1634-1637 ◽

Cited By ~ 8

Author(s):

Chia-Ching Wu ◽

Wei-Chen Shih

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Nickel Oxide ◽

Transparent Conductive Oxide ◽

Rf Magnetron Sputtering ◽

Oxide Thin Film ◽

Glass Substrates ◽

Triple Layer ◽

Conductive Oxide

This research presents a triple-layer transparent conductive oxide thin film, with a lithium-doped nickel oxide/silver/lithium-doped nickel oxide (L-NiO/Ag/L-NiO) structure using radio-frequency (RF) magnetron sputtering on glass substrates.

Download Full-text

A laboratory technique for the evaluation of electrochemical transparent conductive oxide delamination from glass substrates

Thin Solid Films ◽

10.1016/s0040-6090(02)01020-9 ◽

2003 ◽

Vol 423 (2) ◽

pp. 153-160 ◽

Cited By ~ 42

Author(s):

K.W. Jansen ◽

A.E. Delahoy

Keyword(s):

Transparent Conductive Oxide ◽

Laboratory Technique ◽

Glass Substrates ◽

Conductive Oxide

Download Full-text

Post-Annealing on the Electrical Properties of Ta-Doped In2O3 Transparent Conductive Films

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.251.387 ◽

2012 ◽

Vol 251 ◽

pp. 387-391 ◽

Cited By ~ 1

Author(s):

Lei Xu ◽

Rui Wang ◽

Qi Xiao

Keyword(s):

Optical Transmission ◽

Rf Sputtering ◽

Annealed Film ◽

Transparent Conductive Oxide ◽

X Ray Diffraction ◽

Electrical And Optical Properties ◽

X Ray ◽

Glass Substrates ◽

Conductive Films ◽

Post Annealing

Ta-doped In2O3 transparent conductive oxide (TCO) films are deposited on glass substrates by radio-frequency (RF) sputtering at 300°C. The influence of post-annealing on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The lowest resistivity of 5.1 × 10−4 Ω•cm is obtained from the film annealed at 500°C, which is only half of that from the un-annealed film (9.9 × 10-4 Ω).

Download Full-text

Catalyst formation and growth of Sn- and In-catalyzed silicon nanowires

MRS Proceedings ◽

10.1557/proc-1258-p04-51 ◽

2010 ◽

Vol 1258 ◽

Author(s):

Irene Ngo ◽

Benedict O'Donnell ◽

José Alvarez ◽

Marie Gueunier-Farret ◽

Jean-Paul Kleider ◽

...

Keyword(s):

Silicon Nanowires ◽

Vapour Deposition ◽

Hydrogen Plasma ◽

Chemical Vapour ◽

Transparent Conductive Oxide ◽

Nanowire Growth ◽

Glass Substrates ◽

Initial Stage ◽

Conductive Oxide ◽

Catalyst Formation

AbstractSilicon nanowires (Si NWs) were grown directly on transparent conductive oxide layers using a single pump down process in a plasma enhanced chemical vapour deposition (PECVD) system. Layers of ITO and SnO2 on glass substrates were exposed to a hydrogen plasma leading to the reduction of the oxide and to the agglomeration of the metal into catalyst droplets of a few tens of nanometers diameter. The diameter and the density of the nanowires depend on the catalysts droplets size and density, we studied step by step the evolution of the surface prior to and at the initial stage of the nanowire growth. The catalyst droplets size and distribution were essentially investigated through Scanning Electron Microscopy (SEM).

Download Full-text

X-ray Amorphous P-type Conductive Oxide; ZnRh2O4

MRS Proceedings ◽

10.1557/proc-747-v2.2 ◽

2002 ◽

Vol 747 ◽

Cited By ~ 2

Author(s):

Satoru Narushima ◽

Hiroshi Mizoguchi ◽

Hiromichi Ohta ◽

Masahiro Hirano ◽

Ken-ichi Shimizu ◽

...

Keyword(s):

Band Gap ◽

Rf Sputtering ◽

Amorphous Film ◽

Band Gap Energy ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Glass Substrates ◽

Conductive Oxide ◽

Type Semiconductor ◽

P Type

ABSTRACTAn amorphous p-type conductive oxide semiconductor was created based on a mother crystalline material, a p-type conductive ZnRh2O4 spinel. The amorphous film of ZnRh2O4 was deposited by an rf sputtering method. Seebeck coefficient was positive, +78 μVK-1, indicating that major carrier is a positive hole. A moderate electrical conductivity (2 S cm-1 at room temperature) for a p-type semiconductor was observed. Optical band gap was estimated to be 2.1 eV. P-n junction diodes with a structure of Au / a-ZnRh2O4 / a-InGaZnO4 / ITO fabricated on glass substrates, operated with a good rectifying characteristics, a rectification current ratio at ± 5V of ∼103. The threshold voltage was 2.1 eV, which corresponds to the band gap energy of the amorphous ZnRh2O4. This is the first discovery of a p-type amorphous oxide and the demonstration of p-n junction all composed of amorphous oxide semiconductors.

Download Full-text