Properties of Transparent Conductive Oxide Films on Flexible Substrates

2006 ◽  
Vol 977 ◽  
Author(s):  
Shih Hsiu Hsiao ◽  
Yoshikazu Tanaka ◽  
Ari Ide-Ektessabi
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Rf Sputtering ◽  
Transparent Conductive Oxide ◽  
Light Transmittance ◽  
Flexible Substrates ◽  
Flexible Displays ◽  
Glass Substrates ◽  
Conductive Oxide ◽  
Doped Zno

AbstractTransparent conductive oxide (TCO) thin films are extensively used in display industry and they can be utilized for flexible displays. The polymer and the plastic materials used as flexible substrates are more bendable and lighter weight compared to glass substrates. However, its mechanical and surface properties differed from glass substrates result in different quality of TCO layers deposited on it. In this study, Polyethylene Terephthalate (PET) and glass were used as substrates. Indium Tin Oxide (ITO), Zinc Oxide (ZnO), Mg-doped ZnO (MZO), Al-doped ZnO (AZO), Ga-doped ZnO (GZO), Al-doped MZO (AMZO), Ga-doped MZO (GMZO) were used as TCO materials deposited by RF sputtering. Rutherford Backscatter Spectroscopy (RBS) and X-Ray Diffraction (XRD) were used to analyze the chemical composition and crystal structure of TCO thin films. Light transmittance and surface resistivity were measured after the different deposited conditions. , Mg-, Al-, Ga- doped ZnO indeed modified the optical properties of ZnO and better than ITO. However, the electrical conductivity was not improved obviously compared to ITO when they deposited on PET substrate at room temperature.

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

2012 ◽  
Vol 260 ◽  
pp. 42-46 ◽  
Author(s):  
G. Socol ◽  
M. Socol ◽  
N. Stefan ◽  
E. Axente ◽  
G. Popescu-Pelin ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Transparent Conductive Oxide ◽  
Laser Deposition ◽  
Flexible Substrates ◽  
Oxide Thin Films ◽  
Conductive Oxide

scholarly journals Solution processed SnO2:Sb transparent conductive oxide as an alternative to indium tin oxide for applications in organic light emitting diodes

2016 ◽  
Vol 4 (16) ◽  
pp. 3563-3570 ◽  
Author(s):  
M. Esro ◽  
S. Georgakopoulos ◽  
H. Lu ◽  
G. Vourlias ◽  
A. Krier ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Spray Pyrolysis Technique ◽  
Transparent Conductive Oxide ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Conductive Oxide

Here, we present the deposition of antimony-doped tin oxide thin films using the ambient spray pyrolysis technique and demonstrate their implementation as transparent electrodes (anodes) in red, green and blue organic light emitting diodes.

scholarly journals High Performance Transparent Conducting Films of Cadmium Indate Prepared by Rf sputtering.

1996 ◽  
Vol 426 ◽  
Author(s):  
T. J. Coutts ◽  
X. Wu ◽  
W. P. Mulligan
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Visible Region ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Before And After

AbstractWe are examining various spinel-structured thin films (e.g., Cd2SnO4, Zn2SnO4) to develop higher-quality transparent conducting oxides (TCO) than more conventional materials such as indium tin oxide. Here, we report on cadmium indate (CdIn2O4, CIO), which is another member of this family. Thin films of CIO were deposited by radio-frequency (RF) magnetron sputtering, from an oxide target, onto borosilicate glass substrates. The variables included the substrate temperature, sputtering gas composition, and pressure. Film properties were measured before and after heat treatment. Characterization involved Hall effect measurements, optical and infrared spectrophotometry, X-ray diffraction, and atomic-force microscopy. Film resistivities as low as 2.3x10-4Ω cm were achieved for a film thickness of 0.55 μm. The transmittance was 90% in the visible region of the spectrum, without correction for substrate losses and without an anti-reflection coating. The plasma resonance occurred at longer wavelengths than for other materials and this, with a bandgap of approximately 3.1 eV, presents a wide window for optical transmittance. The highest mobility was 54 cm2 V-s-1 and the highest carrier concentration was 7.5x1020 cm-3.

Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon

2014 ◽  
Vol 974 ◽  
pp. 116-120
Author(s):  
Q.Z. Mehdi ◽  
Gurumurthy Hegde ◽  
Mohamad Ashry Bin Juusoh ◽  
Jinan B. Al-Dabbagh ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Gas Flow ◽  
Rf Sputtering ◽  
Annealing Treatment ◽  
Visible Spectrum ◽  
Cost Effective ◽  
Morphological Properties ◽  
Argon Gas ◽  
Glass Substrates

Indium tin oxide (ITO) thin films of 150 nm thickness were deposited on quartz glass substrates by RF sputtering technique, followed by thermal annealing treatment. In this technique, the samples have been annealed at different temperature, 300OC, 400OC, 500OC respectively in Argon gas flow. Structural and surface morphological properties were analyzed by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM) after annealing. The XRD showed a polycrystalline structure of ITO film with maximum peak intensity at 2θ= 30.54, <222> orientation without any change in the cubic structure. Continuous and homogeneous films obtained by the AFM after annealing treatment. The visible spectrum from the spectrophotometer showed high transparency between 81% and 95% in the. Increasing the annealing temperature yields evenly distributed pyramidal peaks shaped particles with low roughness. Resistance of ITO thin film was significantly improved from 8.75 kΩ to 1.96 kΩ after 10 minute from 300OC to 500OC annealing temperatures respectively under Argon gas flow. ITO films physical properties would be well improved by this method which is highly suitable for cost effective photonic devices.

scholarly journals STUDYING THE TRANSPARENT AND ELECTRICAL PROPERTIES OF ZnO:Ti THIN FILM WHICH IS PREPARED BY DC MAGNETRON SPUTTERINGSPUTTERING

2009 ◽  
Vol 12 (12) ◽  
pp. 59-64
Author(s):  
Binh Van Ho ◽  
Hung Vu Tuan Le ◽  
Nhien Thi Ngoc Nguyen ◽  
Dat Thanh Huynh ◽  
Phuong Ai Duong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Conductive Oxide ◽  
Doped Zno ◽  
Ceramic Targets

The Ti-doped Zno films were deposited onto glass substrates from ceramic targets ZnO with various Ti concentrations using a DC magnetron sputtering. The experimental results show that all thin films are transparent and conductive oxide films, with the appropriate Ti concentration (⁓1.5% Ti), the conductance of films can be improved. Optical characteristics of thin films was determined by UV-V is spectroscopy. The thickness of thin films was measured by Stylus method. The electrical resistivity was measured by four-point probe, and the roughness of films was determined by AFM.

Thickness Effect of Nb-Doped TiO2 Transparent Conductive Oxide Grown on Glass Substrates Fabricated by RF Sputtering

2016 ◽  
Vol 46 (3) ◽  
pp. 1476-1480 ◽  
Author(s):  
Zong-Liang Tseng ◽  
Lung-Chien Chen ◽  
Jian-Fu Tang ◽  
Meng-Fu Shih ◽  
Sheng-Yuan Chu
Keyword(s):  
Rf Sputtering ◽  
Transparent Conductive Oxide ◽  
Thickness Effect ◽  
Doped Tio2 ◽  
Glass Substrates ◽  
Conductive Oxide

Effects of Substrate Temperature on the Microstructure and Properties of Al-Doped ZnO Thin Films by DC Magnetron Sputtering from AZOY® Target

2013 ◽  
Vol 284-287 ◽  
pp. 108-112
Author(s):  
Pin Chuan Yao ◽  
Shih Tse Hang ◽  
Menq Jiun Wu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Sputtering ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Dc Magnetron Sputtering ◽  
Sintered Ceramic ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Doped Zno

Transparent conducting Al-doped ZnO (AZO) thin films were deposited on soda-lime glass substrates by DC magnetron sputtering with a sintered ceramic target, AZOY® that contains a small amount of Y2O3 in addition to Al2O3 and ZnO. The effect of substrate temperatures (Ts) on the structural, electrical and optical properties of the prepared AZO films was evaluated extensively. By elevating Ts, the electrical conductivity of the films could be effectively improved from 1.68 ×10-3 cm (no substrates heating) to a minimum resistivity of 4.6210-4 cm at Ts = 400oC with an average visible transmittance (400~800nm) of ~80%. It revealed that substrate heating is closely related to the crystallinity and the surface roughness of the deposited films. It is noteworthy that the transmittance in the NIR region was also improved considerably as compared to those using alloy targets by reactive magnetron sputtering and even slightly higher than those using Al-doped ZnO (1 wt.%) ceramic targets by RF sputtering.

Influence of Sputtering Power on the Structure and Photoelectric Property of Ga Doped ZnO Films

2012 ◽  
Vol 591-593 ◽  
pp. 922-926
Author(s):  
Lei Wu ◽  
Qing Nan Zhao ◽  
Gang Wu ◽  
Deng Kui Miao
Keyword(s):  
Thin Films ◽  
Visible Light ◽  
Light Transmittance ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Hall Effect Measurements ◽  
Doped Zno

Ga-doped ZnO (GZO) films were prepared on glass substrates at 523K temperature by non-reactive DC magnetron sputtering. The effects of sputtering power on microstructure and properties of the GZO films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis-NIR spectrometer. The results show that GZO thin films exhibit high c-axis-orientation, and the intensity of peak increase as the enhanced of sputtering power; the increase of power will reduce the film’s visible-light transmittance, but for all of the GZO thin films the average transmittance of the visible-light is above 80%. The sheet resistance of GZO films decreases when the sputtering power gradually heightened from 80W to 200W. The lowest resistivity of 6.559×10-4Ω•cm can be obtained in the condition of the sputtering power is 100W, and the lowest square resistance is 7.9Ω/□.

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