X-ray Amorphous P-type Conductive Oxide; ZnRh2O4

2002 ◽  
Vol 747 ◽  
Author(s):  
Satoru Narushima ◽  
Hiroshi Mizoguchi ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Ken-ichi Shimizu ◽  
...  
Keyword(s):  
Band Gap ◽  
Rf Sputtering ◽  
Amorphous Film ◽  
Band Gap Energy ◽  
Oxide Semiconductor ◽  
Amorphous Oxide ◽  
Glass Substrates ◽  
Conductive Oxide ◽  
Type Semiconductor ◽  
P Type

ABSTRACTAn amorphous p-type conductive oxide semiconductor was created based on a mother crystalline material, a p-type conductive ZnRh2O4 spinel. The amorphous film of ZnRh2O4 was deposited by an rf sputtering method. Seebeck coefficient was positive, +78 μVK-1, indicating that major carrier is a positive hole. A moderate electrical conductivity (2 S cm-1 at room temperature) for a p-type semiconductor was observed. Optical band gap was estimated to be 2.1 eV. P-n junction diodes with a structure of Au / a-ZnRh2O4 / a-InGaZnO4 / ITO fabricated on glass substrates, operated with a good rectifying characteristics, a rectification current ratio at ± 5V of ∼103. The threshold voltage was 2.1 eV, which corresponds to the band gap energy of the amorphous ZnRh2O4. This is the first discovery of a p-type amorphous oxide and the demonstration of p-n junction all composed of amorphous oxide semiconductors.

Fabrication and Photoelectrochemical Characterization of Fe, Co, Ni and Cu-Doped TiO2 Thin Films

2013 ◽  
Vol 764 ◽  
pp. 266-283 ◽  
Author(s):  
Ibram Ganesh ◽  
Rekha Dom ◽  
P.H. Borse ◽  
Ibram Annapoorna ◽  
G. Padmanabham ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Ions ◽  
Band Gap ◽  
Metal Ion ◽  
Band Gap Energy ◽  
Chemical Compositions ◽  
Gap Energy ◽  
Glass Substrates ◽  
Photoelectrochemical Characterization

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

Water Vapour Effects on the Oxidation of Chromia-Forming Alloys

2011 ◽  
Vol 696 ◽  
pp. 200-205 ◽  
Author(s):  
Alain Galerie ◽  
Jean Pierre Petit ◽  
Yves Wouters ◽  
Julie Mougin ◽  
Anusara Srisrual ◽  
...  
Keyword(s):  
Water Vapour ◽  
Stainless Steels ◽  
High Mobility ◽  
Major Change ◽  
Growth Direction ◽  
Band Gap Energy ◽  
Type Semiconductor ◽  
Temperature Relaxation ◽  
P Type ◽  
Chromia Scales

The electronic properties of chromia scales grown between 800°C and 900°C on chromium metal and chromia-forming ferritic stainless steels were determined using room temperature PhotoElectroChemistry (PEC) experiments and the relative importance of the n- and p-character of the scales could be assessed. According to the thermodynamic previsions of defects structures, the external part of all the scales grown in oxygen exhibits band gap energy around 3.5 eV, with a marked p-type character on chromium and a possibly n-type behaviour on stainless steels. On the contrary, the internal part of the scales is always n-type, with predominant interstitial chromium defects. A major change appears when chromium or stainless steels are oxidised in water vapour-argon mixtures, where the absence of a p‑type semiconductor in the scales could be evidenced. Hydrogen defects are thought to be responsible of this particular behaviour which leads to a strong reduction of residual stresses due to increased high temperature relaxation. Moreover, the inversion of the growth direction resulting from high mobility of the OH defects makes the chromia scales grown in water vapour more adherent than when grown in oxygen.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature

2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Direct Band

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.

scholarly journals Optical Properties of Undoped and Indium-doped Tin Oxide Thin Films

2011 ◽  
Vol 35 (1) ◽  
pp. 99-111 ◽  
Author(s):  
Fatema Rezwana Chowdhury ◽  
Shamima Choudhury ◽  
Firoz Hasan ◽  
Tahmina Begum
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Tin Oxide ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
Visible Range ◽  
Absorption Region ◽  
Gap Energy ◽  
Glass Substrates ◽  
In Doping

Thin films of Tin Oxide (SnO2), having thickness of 200 nm, were formed on to glass substrates by thermal evaporation of high-purity SnO2 powder in vacuum at various substrate temperatures (TS), ranging between 25 and 200°C. SnO2 films with varying thickness were also prepared for a fixed TS = 100°C. Further, doping of SnO2 films with Indium (In) was accomplished through solid state diffusion process by successive deposition of SnO2 and In films and subsequent annealing at 200°C for 10 minutes. Both undoped and doped films were characterized optically by UV-VIS-NIR spectrophotometry in the photon wavelength ranging from 300 to 2500 nm. In the visible photon wavelength range, the average optical transmittance (T%) of the films with varying TS was found to be 85%. The maximum value of T % was found to be 89 % around the wavelength of 700nm. The variation of absorption coefficient with photon energy in the fundamental absorption region is the steepest for TS = 100°C. The sub-band gap (SBG) absorption is also minimum for this Ts. A fluctuating behavior of the band gap energy (Eg) with Ts is observed attaining the highest value of 3.59 eV for Ts = 100°C. The band gap energy increases with thickness but T% in the visible range decreases. The T% in the visible range varies inversely with indium doping, being highest for undoped films. The Eg increases upto 2 wt% In doping and gradually decreases for enhanced doping. It seems reasonable to conclude that In doping does not bring favorable optical characteristics. Undoped SnO2 films having thickness of 200 nm and formed at substrate temperature of 100°C yield essential acceptable properties for photovoltaic applications.DOI: http://dx.doi.org/10.3329/jbas.v35i1.7975Journal of Bangladesh Academy of Sciences, Vol.35, No.1, 99-111, 2011

scholarly journals Effects of Sulfurization Temperature on Properties of CZTS Films by Vacuum Evaporation and Sulfurization Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jie Zhang ◽  
Bo Long ◽  
Shuying Cheng ◽  
Weibo Zhang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Crystallite Size ◽  
Low Cost ◽  
Band Gap Energy ◽  
Vacuum Evaporation ◽  
Glass Substrates ◽  
Sulfurization Temperature ◽  
Czts Thin Films

Copper zinc tin sulfur (CZTS) thin films have been extensively studied in recent years for their advantages of low cost, high absorption coefficient (≥104 cm−1), appropriate band gap (~1.5 eV), and nontoxicity. CZTS thin films are promising materials of solar cells like copper indium gallium selenide (CIGS). In this work, CZTS thin films were prepared on glass substrates by vacuum evaporation and sulfurization method. Sn/Cu/ZnS (CZT) precursors were deposited by thermal evaporation and then sulfurized in N2+ H2S atmosphere at temperatures of 360–560°C to produce polycrystalline CZTS thin films. It is found that there are some impurity phases in the thin films with the sulfurization temperature less than 500°C, and the crystallite size of CZTS is quite small. With the further increase of the sulfurization temperature, the obtained thin films exhibit preferred (112) orientation with larger crystallite size and higher density. When the sulfurization temperature is 500°C, the band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin films are 1.49 eV, 9.37 Ω · cm,1.714×1017 cm−3, and 3.89 cm2/(V · s), respectively. Therefore, the prepared CZTS thin films are suitable for absorbers of solar cells.

scholarly journals The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices

2017 ◽  
Vol 897 ◽  
pp. 747-750 ◽  
Author(s):  
Peter M. Gammon ◽  
Fan Li ◽  
C.W. Chan ◽  
Ana M. Sanchez ◽  
Steven A. Hindmarsh ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Diodes ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Device Layer ◽  
Band Bending ◽  
Transmission Electron ◽  
Type Semiconductor ◽  
P Type ◽  
New Generation

A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to semi-insulating 4H silicon carbide (SiC) leading to a Si/SiC substrate solution that promises to combine the benefits of silicon-on-insulator (SOI) technology with that of SiC. Here, details of a process are given to produce thin films of silicon 1 and 2 μm thick on the SiC. Simple metal-oxide-semiconductor capacitors (MOS-Cs) and Schottky diodes in these layers revealed that the Si device layer that had been expected to be n-type, was now behaving as a p-type semiconductor. Transmission electron microscopy (TEM) of the interface revealed that the high temperature process employed to transfer the Si device layer from the SOI to the SiC substrate caused lateral inhomogeneity and damage at the interface. This is expected to have increased the amount of trapped charge at the interface, leading to Fermi pinning at the interface, and band bending throughout the Si layer.

Absorber Films of Antimony Chalcogenides via Chemical Deposition for Photovoltaic Application

2004 ◽  
Vol 836 ◽  
Author(s):  
M. T. S. Nair ◽  
Y. Rodríguez-Lazcano ◽  
Y. Peña ◽  
S. Messina ◽  
J. Campos ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Chemical Deposition ◽  
Dark Conductivity ◽  
Glass Substrates ◽  
Photovoltaic Application ◽  
Sodium Selenosulfate ◽  
P Type ◽  
Antimony Chalcogenides

ABSTRACTAntimony sulfide thin films (300 nm) have been deposited on glass substrates at 1–10°C from chemical bath. When heated these become crystalline and photoconductive with optical band gap (direct) of 1.7 eV. Thin films formed from chemical baths containing SbCl3 and sodium selenosulfate are of mixed phase Sb2O3/Sb2Se3, which when heated in the presence of Se-vapor converts to single phase Sb2Se3 film with optical band gap of 1.1 eV. Such films possess dark conductivity of 10-8 ohm-1cm-1 and show photosensitivity of two orders. Reaction of Sb2S3-CuS in nitrogen at 400°C produces crystalline, photoconductive p-type CuSbS2 with optical band gap (direct) of 1.5 eV. By controlling the deposition and heating condition, (i)Sb2S3-(p)CuSbS2 layer is formed, which is utilized in a photovoltaic structure, (n)CdS:In-(i)Sb2S3-(p)CuSbS2, with a Voc of 345 mV and Jsc 0.18 mA/cm2 under 1 kW m-2 tungsten halogen illumination. In the case of a structure, CdS:Cl-Sb2S3-Cu2-xSe, Voc of 350 mV and Jsc of 0.5 mA/cm2 are observed.

Electrodeposition and Properties of CuInS2 Thin Films

2013 ◽  
Vol 690-693 ◽  
pp. 1659-1663
Author(s):  
Hai Fang Zhou ◽  
Xiao Hu Chen
Keyword(s):  
Thin Films ◽  
Photocurrent Density ◽  
Enhancement Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Ito Glass ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550°C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20×1017 cm−3, respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 mA/cm2 under 255 lx illumination, the sample shows the photo-enhancement effect.

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