The Influence of Growth Parameters of Strain InGaAs Quantum Wells on Luminescent Properties

2022 ◽  
Author(s):  
Lei Gu ◽  
Juan Meng
Keyword(s):  
Quantum Wells ◽  
Growth Parameters ◽  
Luminescent Properties

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

2012 ◽  
Vol 100 (26) ◽  
pp. 261103 ◽  
Author(s):  
J.-R. Chang ◽  
S.-P. Chang ◽  
Y.-J. Li ◽  
Y.-J. Cheng ◽  
K.-P. Sou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescent Properties ◽  
Multiple Quantum Wells ◽  
Core Shell ◽  
Multiple Quantum

AES and EELFS Studies of Initial Stages of Growth of GaAs/InAs/GaAs Heterostructures.

1988 ◽  
Vol 144 ◽  
Author(s):  
F. D. Schowengerdt ◽  
F. J. Grunthaner ◽  
John K. Liu
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Growth Parameters ◽  
High Energy ◽  
Model Calculations ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
Stages Of Growth ◽  
Double Heterostructures ◽  
Composition And Structure

ABSTRACTWe report on a systematic study of the composition and structure of GaAs/InAs/GaAs quantum wells using Auger Electron Spectroscopy (AES), Extended Energy Loss Fine Structure (EELFS), and Reflection High Energy Electron Diffraction (RHEED) techniques. Double heterostructures with InAs thickness ranging from 2 to 10 monolayers, capped by 2 to 10 monolayers of GaAs, were grown by MBE using a variety of techniques, including those employing sequential, interrupted, and delayed shutter timing sequences. AES peak ratios are compared with model calculations to monitor compositional development of the multilayers. The AES results are correlated with RHEED measurements to determine MBE growth parameters for optimal control of the stoichiometry and surface morphology. EELFS was used to monitor strain in the buried InAs layers. The AES results show departure from smooth laminar growth of layers of stoichiometric InAs on GaAs at temperatures below 420 C and above 470 C. AES results on the quantum well structures suggest floating InAs layers on top of the GaAs and/or facet formation in the GaAs layers. The EELFS results, when compared to bulk InAs, indicate the presence of strain in the buried InAs quantum well.

Nanoscale Features Grown by MBE on Nonplanar Patterned Si Substrates

1995 ◽  
Vol 380 ◽  
Author(s):  
Karl D. Hobart ◽  
Fritz J. Kub ◽  
Henry F. Gray ◽  
Mark E. Twigg ◽  
Doewon Park ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Parameters ◽  
Multiple Quantum ◽  
Electron Microscopies ◽  
Si Substrates ◽  
Transmission Electron ◽  
Low Dimensional ◽  
20 Nm ◽  
Nanoscale Features ◽  
Qualitative Changes

ABSTRACTSi growth by molecular beam epitaxy on nonplanar patterned Si substrates is studied as a function of growth parameters. The substrates consist of a truncated pyramid template with {111} sides and (100) tops formed by anisotropic etching of Si(100). For growth temperatures ≤ 550°C no qualitative changes in the morphology of the template are observed. At growth temperatures between 650–700°C {113} facets begin to form on the (100) surface and reduce the lateral dimensions of the (100) facet to < 20 nm. At high temperatures (∼800°C) {113} facets remain stable and {111} facets no longer exist. The small (100) mesa formed at medium temperatures by facet reduction is exploited through the growth of Si/Si 1-xGex multiple quantum wells leading to low-dimensional structures. Observations are quantified by scanning electron and transmission electron microscopies.

scholarly journals GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy

1997 ◽  
Vol 2 ◽  
Author(s):  
A. Sohmer ◽  
J. Off ◽  
H. Bolay ◽  
V. Härle ◽  
V. Syganow ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Parameters ◽  
Stokes Shift ◽  
Emission Peak ◽  
Band Edge ◽  
Time Resolved ◽  
Photothermal Deflection Spectroscopy ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Significant Line

The dependence of the In-incorporation efficiency and the optical properties of MOVPE-grown GaInN/GaN-heterostructures on various growth parameters has been investigated. A significant improvement of the In-incorporation rate could be obtained by increasing the growth rate and reducing the H2-partial pressure in the MOVPE reactor. However, GaInN layers with a high In-content typically show an additional low energy photoluminescence peak, whose distance to the band-edge increases with increasing In-content. For GaInN/GaN quantum wells with an In-content of approximately 12%, an increase of the well thickness is accompanied by a significant line broadening and a large increase of the Stokes shift between the emission peak and the band edge determined by photothermal deflection spectroscopy. With a further increase of the thickness of the GaInN layer, a second GaInN-correlated emission peak emerges. To elucidate the nature of these optical transitions, power-dependent as well as time-resolved photoluminescence measurements have been performed and compared to the results of scanning transmission electron microscopy.

scholarly journals GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 787
Author(s):  
Wurui Song ◽  
Fang Ren ◽  
Yunyu Wang ◽  
Yue Yin ◽  
Shuo Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Large Scale ◽  
Growth Parameters ◽  
Low Cost ◽  
Buffer Layers ◽  
Oxide Semiconductor ◽  
Organic Chemical ◽  
Amorphous Sio2 ◽  
Axis Orientation ◽  
Amorphous Substrates

The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices. In this paper, we reported the growth of GaN-based light-emitting diodes (LEDs) on amorphous SiO2 substrate with the use of nanorods and graphene buffer layers by metal organic chemical vapor deposition (MOCVD). The effect of different growth parameters on the morphology and vertical-to-lateral aspect ratio of nanorods was discussed by analyzing growth kinetics. Furthermore, we tuned nanorod coalescence to obtain continuous GaN films with a blue-LED structure by adjusting growth conditions. The GaN films exhibited a hexagonal wurtzite structure and aligned c-axis orientation demonstrated by X-ray diffractometer (XRD), Raman, and transmission electron microscopy (TEM) results. Finally, five-pair InGaN/GaN multi-quantum-wells (MQWs) were grown. The photoluminescence (PL) showed an intense emission peak at 475 nm, and the current–voltage (I-V) curve shows a rectifying behavior with a turn-on voltage of 5.7 V. This work provides a promising fabrication method for the large-area and low-cost GaN-based devices on amorphous substrates and opens up the further possibility of nitride integration with Si (100) complementary metal oxide semiconductor (CMOS) electronics.

scholarly journals PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

Materials ◽  
2019 ◽  
Vol 12 (2) ◽  
pp. 317 ◽  
Author(s):  
Hui-Wen Cheng ◽  
Shen-Chieh Lin ◽  
Zong-Lin Li ◽  
Kien-Wen Sun ◽  
Chien-Ping Lee
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Crystal Surface ◽  
Growth Parameters ◽  
Double Quantum ◽  
Type I ◽  
Group V ◽  
Surface Emitting Lasers ◽  
Emitting Lasers ◽  
Lattice Matched

This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In0.35Ga0.65As0.095Sb0.905 in terms of growth parameters (V/III ratio, Sb2/As2 ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al0.85Ga0.15As0.072Sb0.928 (sample A) and Al0.5Ga0.5As0.043Sb0.957 (sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of AlxGa1−xAsySb1−y in terms of lasing performance.

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