Enhanced diffusion and improved device performance using dual spectral source rapid thermal processing

1997 ◽  
Vol 26 (12) ◽  
pp. 1422-1427 ◽  
Author(s):  
R. Singh ◽  
K. C. Cherukuri ◽  
L. Vedula ◽  
A. Rohatgi ◽  
J. Mejia ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Performance ◽  
Enhanced Diffusion

Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Usami ◽  
Y. Tokuda ◽  
H. Shiraki ◽  
H. Ueda ◽  
T. Wada ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Zn Diffusion ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Zn Concentration ◽  
The Difference ◽  
Doped Oxide

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

Influence of Oxygen on Rapid Thermal Co-Diffusion of Phosphorus and Aluminium in Silicon

1995 ◽  
Vol 387 ◽  
Author(s):  
K. Mahfoud ◽  
B. Hartiti ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Thermal Processing ◽  
Thermal Cycle ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Rapid Thermal Processing ◽  
Device Performance ◽  
Local Motion ◽  
Minority Carrier Diffusion Length ◽  
Device Processing ◽  
Large Enhancement

AbstractLocal motion, diffusion and interaction of impurities in solids are important aspects of semiconductor material and device processing. Rapid thermal processing (RTP) is extremely concerned and appears to offer significant advantages in these areas. As oxygen is one of the dominant impurities present in silicon, various applications require different level of oxygen to improve the device performance.In this work, we have taken the advantage of this feature to study the effects of the oxygen concentration in silicon on the rapid thermal co-diffusion of phosphorus and aluminium. In particular, we will show that the large enhancement of the minority carrier diffusion length (LD) due to this process can be related to the presence of oxygen and carbon which influences during the thermal cycle are of importance.

Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions

1986 ◽  
Vol 71 ◽  
Author(s):  
Tom Sedgwick
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Attractive Potential ◽  
High Activation ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Diffusion Effects ◽  
Junction Formation ◽  
Short Time

AbstractRapid Thermal Processing (RTP) can minimize processing time and therefore minimize dopant motion during annealing of ion implanted junctions. In spite of the advantage of short time annealing using RTP, the formation of shallow B junctions is thwarted by channeling, transient enhanced diffusion and concentration enhanced diffusion effects all of which lead to deeper B profiles. Channeling and transient enhanced diffusion can be avoided by preamorphizing the silicon before the B implant. However, defects at the original amorphous/crystal boundary persist after annealing. Very low energy B implantation can lead to very shallow dopant profiles and in spite of channeling effects, offers an attractive potential shallow junction technology. In all of the shallow junction formation techniques RTP is required to achieve both high activation of the implanted species and minimal diffusion of the implanted dopant.

Diffusion Modeling of the Redistribution of Ion Implanted Impurities

1985 ◽  
Vol 52 ◽  
Author(s):  
Alwin E. Michel
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Fabrication ◽  
Diffusion Modeling ◽  
Enhanced Diffusion ◽  
The Common ◽  
Diffusion Mechanisms ◽  
Silicon Device ◽  
Temperature Furnace ◽  
Ion Implanted

ABSTRACTTransient enhanced diffusion during rapid thermal processing has been reported for most of the common dopants employed for silicon device fabrication. For arsenic a large amount of the available data is fit by a computational model based on accepted diffusion mechanisms. Ion implanted boron on the other hand exhibits anomalous tails and transient motiou. A time dependence of this displacement is demonstrated at lower temperatures. High temperature rapid anneals are shown to reduce some of the anomalous motion observed for low temperature furnace anneals. A model is described that links the electrical activation with the diffusion and describes both the transient diffusion of rapid thermal processing and the large anomalous diffusion reported many years ago for furnace anneals.

Shallow Silicided Junctions for VLSI Cmos Transistors by Furnace and Rapid Thermal Processing

1986 ◽  
Vol 71 ◽  
Author(s):  
A.L. Butler ◽  
D.J. Foster ◽  
A.J. Pickering
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Performance ◽  
Optimum Conditions ◽  
Furnace Annealing ◽  
Boron Fluoride ◽  
Device Scaling ◽  
Diffusion Effects ◽  
Silicon Implantation ◽  
Better Than

AbstractAs a result of device scaling very shallow low resistance diffusions are required for VLSI CMOS fabrication. This paper describes a technique for their formation using silicon implantation for preamorphisation, counterdoping arsenic implantation and overall boron fluoride implantation for the sources and drains of the n- and p-channel transistors. Platinum silicidation has been used to reduce diffusion and polysilicon sheet resistances to 8Q/square. Activation of the shallow diffusions has been achieved either by furnace annealing (FA) or rapid thermal annealing (RTA) in the range 900°C to 1100 °C. Materials results are discussed including TTEM, SIMS and SR profiling. The suitability of the technique for VLSI CMOS applications is demonstrated by the fabrication of sub-micron transistors. With larger wafer diameters (>5') the FA conditions considered are not practicable owing to ramped diffusion effects which lead to deeper junctions. Hence RTA is necessary: optimum conditions found were 1100 °C for 10 seconds when device performance equivalent to or better than FA can be achieved.

Transient Enhanced Diffusion in B+ and P+ Implanted Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
S. J. Pennycook ◽  
R. J. Culbertson
Keyword(s):  
Heat Treatment ◽  
Point Defects ◽  
Diffusion Coefficients ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Dependent ◽  
Enhanced Diffusion ◽  
Thermally Activated ◽  
Transient Enhanced Diffusion ◽  
And Diffusion

AbstractWe report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

Rapid Thermal Processing of Implanted GaN Up to 1500°C

1998 ◽  
Vol 537 ◽  
Author(s):  
X. A. Cao ◽  
S. J. Pearton ◽  
R. K. Singh ◽  
C. R. Abernathy ◽  
J. Han ◽  
...  
Keyword(s):  
Point Defect ◽  
Diffusion Coefficients ◽  
Thermal Processing ◽  
Effective Diffusion ◽  
Rapid Thermal Processing ◽  
Strong Reduction ◽  
Lattice Disorder ◽  
Enhanced Diffusion ◽  
Effective Diffusion Coefficients ◽  
Activation Efficiency

AbstractGaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500°C using AIN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2×10-13 cm2 s-1 at 1400°C, except Be, which displays damage-enhanced diffusion at 900°C and is immobile once the point defect concentration is removed. Activation efficiency of ∼90% is obtained for Si at 1400°C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500°C compared to previous results at 1100°C. There is minimal interaction of the sputtered AIN with GaN under our conditions, and it is readily removed selectively with KOH.

Rapid Thermal Processing (RTP) of Shallow Silicon Junctions

1985 ◽  
Vol 45 ◽  
Author(s):  
T.E. Seidel
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
High Dose ◽  
Atom Diffusion ◽  
Enhanced Diffusion ◽  
Ion Channeling ◽  
High Temperature Short Time ◽  
Long Time ◽  
Residual Damage ◽  
Short Time

ABSTRACTRapid Thermal Processing (RTP) is used to study shallow junction formation for high dose implanted silicon. The residual damage from As damage is efficiently removed using high temperature-short time anneals (1100°C - few seconds), while limited arsenic atom diffusion is obtained. The diffusion properties are also characterized by concentration enhanced diffusion at higher doping. The higher doping is metastable, with reversible changes in resistivity observed for sequential 1100°C-800°C-1100°C-800°C thermal cycles. RTP gives shallower defect free As junctions than standard long time anneals. Boron junctions are limited by the depth extension of a large ion-channeling-tail which is shown to undergo local enhanced diffusion. The approaches to form shallow p+ junctions without channel tails are discussed. A summary of ion damage studies is made. Some generalizations for determining an RTP advantage or disadvantage are made, based on activation energy differences of effects.

Sign in / Sign up

Export Citation Format

Share Document