Effect of Etched Silicon Substrate on Structural, Morphological, and Optical Properties of Deposited ZnO Films via DC Sputtering

2021 ◽  
Author(s):  
B. Abdallah ◽  
R. Hussin ◽  
W. Zetoune
Keyword(s):  
Optical Properties ◽  
Silicon Substrate ◽  
Zno Films ◽  
Dc Sputtering ◽  
Etched Silicon

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

Electrical Characteristics of Thin Cerium Oxide Film on Silicon Substrate by Reactive DC Sputtering

2001 ◽  
Vol 4 (9) ◽  
pp. F15 ◽  
Author(s):  
Tung Ming Pan ◽  
Chao Hsin Chien ◽  
Tan Fu Lei ◽  
Tien Sheng Chao ◽  
Tiao Yuan Huang
Keyword(s):  
Oxide Film ◽  
Cerium Oxide ◽  
Silicon Substrate ◽  
Electrical Characteristics ◽  
Dc Sputtering

Electrical and optical properties of ZnO films sequentially implanted with P ions

2011 ◽  
Vol 26 (12) ◽  
pp. 125016 ◽  
Author(s):  
Y H Xue ◽  
X D Zhang ◽  
Y Y Shen ◽  
D C Zhang ◽  
F Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Zno Films ◽  
Electrical And Optical Properties

Influence of deposition parameters on structural, morphological and optical properties of ZnO films using robust design approach

2015 ◽  
Vol 6 (2/3) ◽  
pp. 154 ◽  
Author(s):  
B.W. Shivaraj ◽  
H.N. Narasimha Murthy ◽  
M. Krishna ◽  
B.M. Nagabhushana ◽  
Sushanth D. Shandilya ◽  
...  
Keyword(s):  
Optical Properties ◽  
Robust Design ◽  
Design Approach ◽  
Zno Films ◽  
Deposition Parameters

Optical Studies of porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
T. Lin ◽  
M. E. Sixta ◽  
J. N. Cox ◽  
M. E. Delaney
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Steady State ◽  
Porous Silicon ◽  
Ftir Spectroscopy ◽  
Optical Studies ◽  
Etched Silicon ◽  
Bending Modes ◽  
P Type ◽  
Over Time

AbstractThe optical properties of both electrochemically anodized and chemically stain-etched porous silicon are presented. Fourier transform infrared (FTIR) spectroscopy showed that absorbance in stain-etched samples was 3x and 1.7x greater than in anodized samples for the SiH/SiH2 stretch and scissors-bending modes, respectively. Also, oxygen is detected in stain-etched samples immediately after formation, unlike anodized samples. Photoluminescence measurements showed different steady state characteristics. Electrochemical-etched silicon samples stored in air increased in photoluminescent intensity over time, unlike the stain-etched samples. A photoluminescent device made by anodization on epitaxial p-type material (0.4 Ωm) on n-type substrate (0.1 Ω-cm) did not exhibit electroluminescence.

Effects of As Doping on Properties of ZnO Films

2001 ◽  
Vol 692 ◽  
Author(s):  
K. S. Huh ◽  
D. K. Hwang ◽  
K. H. Bang ◽  
M. K. Hong ◽  
D. H. Lee ◽  
...  
Keyword(s):  
Optical Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Annealing Treatment ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
As Doping ◽  
Dopant Atoms ◽  
Increasing Temperature ◽  
Secondary Ion

AbstractA series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.

Effects of annealing conditions and film thickness on electrical and optical properties of epitaxial Al-doped ZnO films

2016 ◽  
Vol 599 ◽  
pp. 19-26 ◽  
Author(s):  
S. Kuprenaite ◽  
A. Abrutis ◽  
V. Kubilius ◽  
T. Murauskas ◽  
Z. Saltyte ◽  
...  
Keyword(s):  
Optical Properties ◽  
Film Thickness ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Annealing Conditions ◽  
Doped Zno
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