scholarly journals Annealing effects on structural and photovoltaic properties of the dip-SILAR-prepared bismuth oxyhalides (BiOI, Bi7O9I3, Bi5O7I) films

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
R. MD Matiur ◽  
A. A. Abuelwafa ◽  
Anissa A. Putri ◽  
S. Kato ◽  
N. Kishi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phase Transformations ◽  
Current Density ◽  
Energy Band Diagram ◽  
Experimental Results ◽  
Silar Method ◽  
Photovoltaic Properties ◽  
Annealing Temperatures ◽  
Bismuth Oxyhalides ◽  
Annealing Effects

AbstractBismuth oxyhalides are becoming a promising contender for photovoltaic applications due to its non-toxic nature and decent optical properties. This study mainly deals with clarifying the effects of phase transformations on the structure, optical, and electrical properties of BiOI thin film prepared via dip-successive ionic layer adsorption and reaction (SILAR) method at different annealing temperatures ranging from 100 to 400 °C. Therefore, significant phase transformations (i.e., the existence of Bi7O9I3 and Bi5O7I have been confirmed at 300 °C and 400 °C, respectively) appeared in the produced films, which were mainly due to the change of annealing temperatures. The experimental results confirmed that produced films achieved the maximum current density and efficiency and minimum current density and efficiency at 100 °C and 400 °C, respectively. Experimental results were also showed that with increasing the annealing temperature from 100 to 400 °C, the indirect bandgap risen from 1.77 to 2.96 eV while the crystallite size decreased from 17.62 to 12.99 nm. The energy band diagram with electrolyte explained the observed poor electrical properties during the phase transformation. Hence, this result will add positive impacts on the new information on findings for the dip-SILAR-prepared BiOI photovoltaic cells.

Annealing effects on phase transformation and powder microstructure of nanocrystalline zirconia polymorphs

1999 ◽  
Vol 14 (1) ◽  
pp. 90-96 ◽  
Author(s):  
R. Ramamoorthy ◽  
S. Ramasamy ◽  
D. Sundararaman
Keyword(s):  
Monoclinic Phase ◽  
Lattice Strain ◽  
Dopant Concentration ◽  
Precipitation Method ◽  
Strain Effect ◽  
Volume Percentage ◽  
Annealing Temperatures ◽  
Annealing Effects ◽  
Nanocrystalline Zirconia ◽  
Average Size

Nanocrystalline zirconia powders in pure form and doped with yttria and calcia were prepared by the precipitation method. In the as-prepared condition, all the doped samples show only monoclinic phase, independent of the dopants and dopant concentration. On annealing the powders at 400 °C and above, in the case of 3 and 6 mol% Y2O3 stabilized ZrO2 (3YSZ and 6YSZ), the monoclinic phase transforms to tetragonal and cubic phases, respectively, whereas in 3 and 6 mol% CaO stabilized ZrO2 (3CSZ and 6CSZ), the volume percentage of the monoclinic phase gradually decreases up to the annealing temperature of about 1000 °C and then increases for higher annealing temperatures. The presence of monoclinic phase in the as-prepared samples of doped zirconia has been attributed to the lattice strain effect which results in the less symmetric lattice. For the annealing temperatures below 1000 °C, the phenomenon of partial stabilization of the tetragonal phase in 3CSZ and 6CSZ can be explained in terms of the grain size effect. High resolution transmission electron microscopy (HRTEM) observations reveal the lattice strain structure in the as-prepared materials. The particles are found to be a tightly bound aggregate of small crystallites with average size of 10 nm. The morphology of the particles is observed to be dependent on the dopants and dopant concentration.

Annealing effects on electrical properties of thermal neutron transmutation doped Ge

1983 ◽  
Vol 54 (2) ◽  
pp. 673-676 ◽  
Author(s):  
K. Kuriyama ◽  
M. Yahagi ◽  
K. Iwamura ◽  
Y. Kim ◽  
C. Kim
Keyword(s):  
Electrical Properties ◽  
Thermal Neutron ◽  
Annealing Effects ◽  
Neutron Transmutation

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

scholarly journals Microstructure and Electrical Properties of Low-Voltage Barium Titanate Doped Zinc Oxide Varistor Ceramics

2019 ◽  
Vol 8 (4) ◽  
pp. 2713-2718
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Barium Titanate ◽  
Grain Boundary ◽  
Barrier Height ◽  
Current Density ◽  
Low Voltage ◽  
X Ray ◽  
Highly Nonlinear ◽  
Zno Varistors

In the present, varistor ceramics through the combination of zinc oxide (ZnO) with a perovskite material have become widespread because of their unique properties for a wide range of applications in electronic protection devices. Low-voltage zinc oxide (ZnO) varistors with fast response and highly nonlinear electrical properties for overvoltage protection in an integrated circuit are increasingly significant in the application of low-voltage electronics. The present study highlights the interaction between barium titanate (BaTiO3 ) and ZnO varistors through the employment of solid-state reaction method in the production of low-voltage varistors. The effects of BaTiO3 on the microstructure of ZnO varistors were analyzed through scanning electron microscopy (SEM), energy dispersive X-ray analysis spectroscopy (EDS) and X-ray diffraction (XRD). The EDS analysis and XRD measurements suggest the presence of ZnO and BaTiO3 phases. The electrical properties of BaTiO3 -doped ZnO varistors were examined based on the current density-electric field (J-E) characteristics measurement. The varistor properties showed the nonlinear coefficient (α) from 1.8 to 4.8 with the barrier height (φB) ranged from 0.70 to 0.88 eV. The used of BaTiO3 additive in ZnO varistors produced varistor voltages of 4.7 to 14.1 V/mm with the voltage per grain boundary (Vgb) was measured in the ranges 0.03 to 0.05 V. The lowest leakage current density was 348 µA/cm2 , obtained at the samples containing 12 wt.% BaTiO3 with high barrier height. The reduction in barrier height with increasing BaTiO3 content was associated with the excessive amount of BaTiO3 phase, hence cause the deterioration of active grain boundary due to the variation of oxygen (O) vacancies in the grain boundary.

scholarly journals Fabrication of (ZnO)x: (Cu)1-x/PSi Solar Cell Using Laser Induced Plasma Technique

2021 ◽  
Vol 2114 (1) ◽  
pp. 012028
Author(s):  
G. H. Jihad ◽  
K.A. Aadim
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Current Density ◽  
Electrochemical Etching ◽  
Average Diameter ◽  
Etching Process ◽  
Morphological Properties ◽  
Etching Time ◽  
Solar Cell Performance ◽  
Cell Efficiency

Abstract Fabrication of PSi is generated successfully depending upon photo-electrochemical etching process. The purpose is to differentiate the characterization of the PSi monolayer based on c-silicon solar cell compared to the bulk silicon alone. The surface of ordinary p-n solar cell has been reconstructed on the n-type region of (100) orientation with resistivity (3.2.cm) in hydrofluoric (HF) acid at a concentration of 2 ml was used to in order to enhance the conversion efficiency with 10-minute etching time and current density of 50 mA/cm2, The morphological properties (AFM) as well as the electrical properties have been investigated (J-V). The atomic force microscopy investigation reveals a rugged silicon surface with porous structure nucleating during the etching process (etching time), resulting in an expansion in depth and an average diameter of (40.1 nm). As a result, the surface roughness increases. The electrical properties of prepared PS, namely current density-voltage characteristics in the dark, reveal that porous silicon has a sponge-like structure and that the pore diameter increases with increasing etching current density and the number of shots increasing this led that the solar cell efficiency was in the range of (1-2%), resulting in improved solar cell performance.

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

Doping and Annealing Effects on the Optical Bandgap of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 243-248
Author(s):  
Fatmah S. Bahabri ◽  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Doping Concentration ◽  
Cupric Oxide ◽  
Optical Bandgap ◽  
Visible Range ◽  
Bandgap Energy ◽  
Direct Bandgap ◽  
Annealing Temperatures ◽  
Annealing Effects

In this work, we study the optical properties of the Nickel doped cupric oxide Ni-CuO thin films with Ni various doping concentrations (0, 20, 30, 50, 70, and 80%), at two different annealing temperatures; 200 and 400 °C. The absorbance and optical bandgap for the films are calculated and compared. We find that all films exhibit clear peaks in the visible range, with the increase in the absorptivity via increasing both annealing and Ni concentration. We also find that the annealing affects the shape of the absorbance peaks to be narrowed and blue shifted. Investigation on the direct bandgap energy shows that all films exhibit large direct gap; ranging from 3.87 to 4.01 eV. For non-annealed films, direct bandgap increases with increasing the Ni concentration, while for the annealed samples, the direct bandgap generally decreases by annealing, and with increasing the doping concentration. For the indirect bandgap analysis, the calculated values of the bandgap are ranging from 0.62 to 1.96 eV. We find that for non-annealed films, the indirect bandgap increases with increasing the doping concentration, while after annealing, the bandgap decreases with increasing the doping concentration for the annealing at 200 and 400 °C, with more decreasing in the gap at 400 °C.

Effect of Solution pH and Post-annealing temperatures on the Optical Bandgap of the Copper Oxide Thin Films Grown by modified SILAR Method

MRS Advances ◽  
2019 ◽  
Vol 4 (16) ◽  
pp. 937-944
Author(s):  
S.F.U. Farhad ◽  
S. Majumder ◽  
Md. A. Hossain ◽  
N.I. Tanvir ◽  
R. Akter ◽  
...  
Keyword(s):  
Thin Films ◽  
Cupric Oxide ◽  
Optical Bandgap ◽  
Soda Lime Glass ◽  
Solution Ph ◽  
Sem Images ◽  
Silar Method ◽  
Annealing Temperatures ◽  
Post Annealing ◽  
Deposited Films

AbstractCuprous oxide (Cu2O) thin films have been grown on both soda lime glass (SLG) microscope slides and Fluorine-doped Tin Oxide (FTO) substrates by a modified SILAR technique. The pH level of the bath solution was systematically varied in the range of 4.50 – 7.95 to elucidate their effect on the physical properties of the deposited product. The prepared films showed compact surface morphology composed of spherical grains evident from their SEM images. The XRD measurement showed that the as-deposited films were single phase Cu2O with (111) preferred orientation and this texturing was found to be increasing with increasing pH and annealing temperature. The annealed Cu2O films were found to be stable up to 200 °C and completely converted to cupric oxide (CuO) phases when the temperature reached to 350 °C. The estimated optical bandgaps of the as-grown samples were found in the range of 2.28 – 2.48 eV using UV-Vis-NIR transmission data and showing a bandgap narrowing trend with the decreasing level of solution pH. The effect of post-annealing temperatures (75-350 0C) on the as-deposited films was also studied and found to be crucial to control the optical bandgap (1.44 – 2.13) eV and electrical properties of the films. The sheet resistance of the as-deposited samples was found to be decreasing from 4120 MΩ/square to 800 MΩ/square while grown with increasing acetic acid content in the precursor solutions and decreasing up to 2.66 MΩ/square while annealing up to 250 °C in the air.

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