A nuclear-detection method for sulfur in thin films

Abstract Beta-detected NMR is a type of nuclear magnetic resonance that uses the asymmetric property of radioactive beta decay to provide a “nuclear” detection scheme. It is vastly more sensitive than conventional NMR on a per nuclear spin basis but requires a suitable radioisotope. I briefly present the general aspects of the method and its implementation at TRIUMF, where ion implantation of the NMR radioisotope is used to study a variety of samples including crystalline solids and thin films, and more recently, soft matter and even room temperature ionic liquids. Finally, I review the progress of the TRIUMF βNMR program in the period 2015–2021.

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A New Detection Method of Point Defects in Silicon Dioxide Thin Films

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms1990.116.5_387 ◽

1996 ◽

Vol 116 (5) ◽

pp. 387-391 ◽

Cited By ~ 3

Author(s):

Yoshimichi Ohki ◽

Keisuke Ishii ◽

Kwang Soo Seol ◽

Hiroyuki Nishikawa

Keyword(s):

Thin Films ◽

Silicon Dioxide ◽

Point Defects ◽

Detection Method

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Soft X-ray absorption of thin films detected using substrate luminescence: a performance analysis

Journal of Synchrotron Radiation ◽

10.1107/s1600577520009972 ◽

2020 ◽

Vol 27 (5) ◽

pp. 1289-1296

Author(s):

Cinthia Piamonteze ◽

Yoav William Windsor ◽

Sridhar R. V. Avula ◽

Eugenie Kirk ◽

Urs Staub

Keyword(s):

Thin Films ◽

Performance Analysis ◽

Detection Method ◽

Transmission Measurement ◽

Magnetic Studies ◽

Luminescence Signal ◽

X Ray ◽

Probing Depth ◽

X Ray Absorption ◽

Effective Transmission

X-ray absorption spectroscopy of thin films is central to a broad range of scientific fields, and is typically detected using indirect techniques. X-ray excited optical luminescence (XEOL) from the sample's substrate is one such detection method, in which the luminescence signal acts as an effective transmission measurement through the film. This detection method has several advantages that make it versatile compared with others, in particular for insulating samples or when a probing depth larger than 10 nm is required. In this work a systematic performance analysis of this method is presented with the aim of providing guidelines for its advantages and pitfalls, enabling a wider use of this method by the thin film community. The efficiency of XEOL is compared and quantified from a range of commonly used substrates. These measurements demonstrate the equivalence between XEOL and X-ray transmission measurements for thin films. Moreover, the applicability of XEOL to magnetic studies is shown by employing XMCD sum rules with XEOL-generated data. Lastly, it is demonstrated that above a certain thickness XEOL shows a saturation-like effect, which can be modelled and corrected for.

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The study of interfacial reactions of nickel thin films on GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074616 ◽

1983 ◽

Vol 41 ◽

pp. 156-157

Author(s):

L.J. Chen ◽

Y.F. Hsieh

Keyword(s):

Thin Films ◽

Integrated Circuits ◽

Interfacial Reactions ◽

Metal Contacts ◽

Nickel Thin Films ◽

Thin Foils ◽

The Status ◽

Si Doped ◽

Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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Studies on Water in the Hydration Chamber of a Modified Electron Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069715 ◽

1970 ◽

Vol 28 ◽

pp. 544-545

Author(s):

R. C. Moretz ◽

G. G. Hausner ◽

D. F. Parsons

Keyword(s):

Thin Film ◽

Thin Films ◽

Electron Microscope ◽

Steady State ◽

Room Temperature ◽

Small Mass ◽

Equilibrium Pressure ◽

Biological Objects ◽

Mechanical Pump ◽

Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

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Nucleation and Early Growth of Sputtered thin Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069570 ◽

1970 ◽

Vol 28 ◽

pp. 516-517

Author(s):

Dudley M. Sherman ◽

Thos. E. Hutchinson

Keyword(s):

Thin Films ◽

Electron Beam ◽

Ion Beam ◽

Ion Source ◽

Water Cooling ◽

Stages Of Growth ◽

Lens Assembly ◽

Microscope Technique ◽

Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100076639 ◽

1983 ◽

Vol 41 ◽

pp. 606-607

Author(s):

Klaus-Ruediger Peters ◽

Samuel A. Green

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Critical Point ◽

Metal Films ◽

High Magnification ◽

Osmium Impregnation ◽

Instrumental Resolution ◽

20 Nm ◽

Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

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