The effects of implantation dose and anneal temperature on the layered structure and electrical properties of oxygen-ion-implanted silicon-on-insulator

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.105503 ◽

2017 ◽

Vol 56 (10) ◽

pp. 105503

Author(s):

Kiichi Furukawa ◽

Akinobu Teramoto ◽

Rihito Kuroda ◽

Tomoyuki Suwa ◽

Keiichi Hashimoto ◽

...

Keyword(s):

Epitaxial Growth ◽

Flat Surface ◽

Silicon On Insulator ◽

Thin Silicon ◽

Ion Implanted

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Influence of Nitrogen Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.733 ◽

2013 ◽

Vol 740-742 ◽

pp. 733-736 ◽

Cited By ~ 2

Author(s):

Krystian Król ◽

Mariusz Sochacki ◽

Marcin Turek ◽

Jerzy Żuk ◽

Henryk M. Przewlocki ◽

...

Keyword(s):

Raman Spectroscopy ◽

Electrical Properties ◽

Surface State ◽

Material Properties ◽

Implantation Dose ◽

Nitrogen Implantation ◽

Mos Structure ◽

Implantation Damage ◽

Wide Range ◽

Implantation Dosage

In this article, an influence of nitrogen implantation dosage on SiC MOS structure is analyzed using wide range of nitrogen implantation dose (between ~1013 – 1016). Authors analyzed electrical and material properties of investigated samples using C-V, I-V measurements, Raman spectroscopy, and XPS profiling. It has been shown that surface state trap density is directly connected to implantation damage and thus implantation conditions. Using research results a trap origin at given energy can be concluded.

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Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.633.378 ◽

2014 ◽

Vol 633 ◽

pp. 378-381

Author(s):

Bei Li ◽

X.B. Liu ◽

M. Chen ◽

X.A. Mei

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Layered Structure ◽

Remanent Polarization ◽

Single Phase ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

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Defect Engineering for SIMOX Processing

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.131-133.339 ◽

2007 ◽

Vol 131-133 ◽

pp. 339-344 ◽

Cited By ~ 1

Author(s):

Reinhard Kögler ◽

A. Mücklich ◽

W. Anwand ◽

F. Eichhorn ◽

Wolfgang Skorupa

Keyword(s):

Silicon On Insulator ◽

Oxide Growth ◽

Defect Engineering ◽

Promising Technique ◽

Crucial Point ◽

Vacancy Defects ◽

Oxygen Ion ◽

Oxygen Ion Implantation ◽

Very High ◽

Established Technique

SIMOX (Separation-by-Implantation-of-Oxygen) is an established technique to fabricate silicon-on-insulator (SOI) structures by oxygen ion implantation into silicon. The main problem of SIMOX is the very high oxygen ion fluence and the related defects. It is demonstrated that vacancy defects promote and localize the oxide growth. The crucial point is to control the distribution of vacancies. Oxygen implantation generates excess vacancies around RP/2 which act as trapping sites for oxide growth outside the region at the maximum concentration of oxygen at RP. The introduction of a narrow cavity layer by He implantation and subsequent annealing is shown to be a promising technique of defect engineering. The additional He implant does not initiate oxide growth in the top-Si layer of SOI.

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