The Study of Irradiation Effects on Single-chip Microprocessor System under ESD EMP

2004 ◽  
pp. 45-47
Author(s):  
Xijun Zhang ◽  
Lisi Fan ◽  
Xiaofen Ruan ◽  
Zhancheng Wu
Keyword(s):  
Microprocessor System ◽  
Single Chip ◽  
Irradiation Effects

scholarly journals CONTACTLESS MEASURING OF TEMPERATURE WITH DIFFERENTIAL PHOTO RECEIVER

2019 ◽  
Vol 3 ◽  
pp. 101 ◽  
Author(s):  
Tsanko Karadzhov ◽  
Dimcho Pulov ◽  
Nikolay Angelov
Keyword(s):  
Temperature Measurement ◽  
Spectral Sensitivity ◽  
Optical System ◽  
Microprocessor System ◽  
Single Chip ◽  
Photo Receiver

A method for contactless temperature measurement has been created with two photo receivers with different spectral sensitivity. An algorithm for processing the signals from both receivers of a single-chip microprocessor system has been developed. An optical system for the LWIR diapason of the spectrum is proposed.

scholarly journals COLLECTOR ENGINE CONTROL SYSTEM

2021 ◽  
pp. 57-66
Author(s):  
Oleksandr Vozniak ◽  
Andrii Shtuts ◽  
Mykhailo Zamrii
Keyword(s):  
Integrated Circuits ◽  
Microprocessor System ◽  
Single Chip ◽  
Social Production ◽  
Engine Control System ◽  
Automation Control ◽  
Hardware Costs ◽  
Microprocessor Technology ◽  
Control And Management ◽  
The Given

One of the main features of the current stage of scientific and technological progress is the wider use of microelectronics in various sectors of the economy, which is constantly growing. The role of microelectronics in the development of social production is determined by its almost unlimited possibilities in solving various problems in all sectors of the economy, its profound impact on the culture and life of modern man. Particular attention is now paid to the introduction of microprocessors that solve the problem of automation of control of mechanisms, devices and equipment. Adapting the microprocessor to the conditions of a particular task is mostly done by developing appropriate software, which is then stored in program memory. Hardware adaptation in most cases is performed by connecting the necessary integrated circuits and I / O that meet the problem to be solved. In the given work the microprocessor system of regulation of turns of the collector motor of a direct current is developed. The microprocessor system is developed on the basis of the KM1816 BE 51 microprocessor using a DAC. The microprocessor program changes the engine speed in the range from 1000 to 3000 rpm. In microprocessor technology there is an independent class of large integrated circuits (BIS) - single-chip microcomputers (OMEOM), which are designed to "intellectualize" devices for various purposes. The architecture of single-chip microcomputers is the result of the evolution of microprocessors and microprocessor systems, due to the desire to significantly reduce their hardware costs and cost. Typically, these goals are achieved both by increasing the integration of the BIS and by finding a compromise between cost, hardware costs and technical characteristics of the OMEOM. Development of control systems on single-chip microcomputers is one of the most promising areas in the field of process automation, control and management.

Electron Irradiation Effects in Polyoxymethylene Crystals Grown Inside Trioxane Crystals

1971 ◽  
Vol 29 ◽  
pp. 78-79
Author(s):  
J. P. Colson ◽  
D. H. Reneker
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Detailed Examination ◽  
The Other ◽  
Electron Micrograph ◽  
Irradiation Effects ◽  
Threefold Axis ◽  
Typical Sample ◽  
Polymer Crystals ◽  
Chain Axis

Polyoxymethylene (POM) crystals grow inside trioxane crystals which have been irradiated and heated to a temperature slightly below their melting point. Figure 1 shows a low magnification electron micrograph of a group of such POM crystals. Detailed examination at higher magnification showed that three distinct types of POM crystals grew in a typical sample. The three types of POM crystals were distinguished by the direction that the polymer chain axis in each crystal made with respect to the threefold axis of the trioxane crystal. These polyoxymethylene crystals were described previously.At low magnifications the three types of polymer crystals appeared as slender rods. One type had a hexagonal cross section and the other two types had rectangular cross sections, that is, they were ribbonlike.

In situ TEM studies of irradiation effects for materials improvement

1991 ◽  
Vol 49 ◽  
pp. 452-453
Author(s):  
Charles W. Allen
Keyword(s):  
Nuclear Reactor ◽  
Austenitic Stainless Steels ◽  
High Energy ◽  
Point Of View ◽  
In Situ Tem ◽  
Irradiation Effects ◽  
Tem Analysis ◽  
Radiation Induced ◽  
Analytical Tools

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.

Defects in Crystals

1968 ◽  
Vol 26 ◽  
pp. 244-245
Author(s):  
Kenneth R. Lawless
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Surface Defects ◽  
Chemical Properties ◽  
Material Point ◽  
Crystal Defects ◽  
Defects In Crystals ◽  
Irradiation Effects ◽  
Normal Lattice ◽  
Line Defects

One of the most important applications of the electron microscope in recent years has been to the observation of defects in crystals. Replica techniques have been widely utilized for many years for the observation of surface defects, but more recently the most striking use of the electron microscope has been for the direct observation of internal defects in crystals, utilizing the transmission of electrons through thin samples.Defects in crystals may be classified basically as point defects, line defects, and planar defects, all of which play an important role in determining the physical or chemical properties of a material. Point defects are of two types, either vacancies where individual atoms are missing from lattice sites, or interstitials where an atom is situated in between normal lattice sites. The so-called point defects most commonly observed are actually aggregates of either vacancies or interstitials. Details of crystal defects of this type are considered in the special session on “Irradiation Effects in Materials” and will not be considered in detail in this session.

Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 19-27 ◽  
Author(s):  
Wei William Lee ◽  
Paul S. Ho
Keyword(s):  
Packing Density ◽  
Propagation Delay ◽  
Single Chip ◽  
Crosstalk Noise ◽  
Metal Line ◽  
Total Delay ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Interconnect Technology

Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.

Sign in / Sign up

Export Citation Format

Share Document