Tuning the emission color and temperature range of dual-mode luminescent thermometer by dopant valence states control

2022 ◽  
Vol 26 ◽  
pp. 101349
Author(s):  
Estelle Glais ◽  
Florian Massuyeau ◽  
Romain Gautier
Keyword(s):  
Dual Mode ◽  
Temperature Range ◽  
Valence States ◽  
Emission Color

Broadening the valid temperature range of optical thermometry through dual-mode design

2018 ◽  
Vol 6 (41) ◽  
pp. 11178-11183 ◽  
Author(s):  
Yan Gao ◽  
Yao Cheng ◽  
Tao Hu ◽  
Zeliang Ji ◽  
Hang Lin ◽  
...  
Keyword(s):  
Dual Mode ◽  
Temperature Range ◽  
Mode Design ◽  
Optical Thermometry ◽  
Highly Sensitive ◽  
Wide Range ◽  
Optical Thermometer

This study highlights a highly sensitive dual-mode optical thermometer Pr3+:Gd2ZnTiO6 for thermal readings over a wide range of temperature.

A wide temperature range dual-mode luminescence thermometer based on Pr3+-doped Ba(Zr0.16Mg0.28Ta0.56)O3 transparent ceramic

2021 ◽  
Author(s):  
Wei Tang ◽  
Chuandong Zuo ◽  
Yingkui Li ◽  
Chaoyang Ma ◽  
Xuanyi Yuan ◽  
...  
Keyword(s):  
Single Crystals ◽  
Wide Temperature Range ◽  
Transparent Ceramic ◽  
Transparent Ceramics ◽  
Dual Mode ◽  
Temperature Range ◽  
Temperature Detection ◽  
Thermal Shocks

Compared to glasses and single crystals, transparent ceramics present extraordinarily large resistance to thermal shocks. Here, dual-mode LIR/FL temperature detection with a wide temperature range is realized with BZMT:Pr3+transparent ceramic.

scholarly journals Структурные особенности замещенного феррита стронция Sr-=SUB=-1-x-=/SUB=-La-=SUB=-x-=/SUB=-FeO-=SUB=-3-delta-=/SUB=-: I. Sr-=SUB=-2-=/SUB=-LaFe-=SUB=-3-=/SUB=-O-=SUB=-9-delta-=/SUB=-

2021 ◽  
Vol 63 (10) ◽  
pp. 1648
Author(s):  
В.Д. Седых ◽  
О.Г. Рыбченко ◽  
Н.В. Барковский ◽  
А.И. Иванов ◽  
В.И. Кулаков
Keyword(s):  
Heat Treatment ◽  
Diffraction Analysis ◽  
Rhombohedral Phase ◽  
Structural Features ◽  
Structure Evolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Range ◽  
Treatment Conditions ◽  
Valence States

The structural features and Fe valence states in the substituted strontium ferrite Sr2/3La1/3FeO3-δ (or Sr2LaFe3O9-δ) have been studied for different synthesis and heat treatment conditions by X-ray diffraction analysis and Mossbauer spectroscopy. A series of annealing of Sr2LaFe3O9-δ in vacuum ((10-3 Torr) in the temperature range of 400 - 650оС allowed us to trace the structure evolution from rhombohedral phase (Sr2LaFe3O9) to orthorhombic one (Sr2LaFe3O8) over the formation of intermediate multiphase states and the redistribution of Fe valence states as well.

scholarly journals Pumping-controlled multicolor modulation of upconversion emission for dual-mode dynamic anti-counterfeiting

Nanophotonics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 1519-1528
Author(s):  
Xiaoru Dai ◽  
Ke Wang ◽  
Lei Lei ◽  
Shiqing Xu ◽  
Yao Cheng ◽  
...  
Keyword(s):  
Photon Number ◽  
Upconversion Emission ◽  
Excitation Power ◽  
Color Variation ◽  
Excitation Power Density ◽  
Dual Mode ◽  
Emission Color ◽  
Ultrahigh Sensitivity ◽  
Infrared Excitation ◽  
The Difference

AbstractLanthanide up-conversion features stepwise multi-photon processes, where the difference in photon number that is required for specific up-conversion process usually leads to significant variance in pumping-related processes/properties. In this work, a pumping-controlled dual-mode anti-counterfeiting strategy is conceived by taking advantage of the combination of up-conversion processes with different photon numbers. The combination of Er3+ and Tm3+, which are spatially separated within a designed core/triple-shell nano-architecture, is taken as an example to illustrate such idea. Upon infrared excitation, the emission color of a designed pattern can be switched from red to purple by increasing the excitation power density from 5 to 11 W/cm2, while a bright luminescent trajectory including red, white and blue-green color with different length is observed when rotating the pattern above 600 rpm. In addition, the relative up-conversion emission intensities of the Er3+ and Tm3+ ions can be manipulated through tailoring interfacial or inner defects in the core/triple-shell nano-crystals, which enable an ultrahigh sensitivity for the pumping-controlled emission color variation to be observed under excitation power well below 11 W/cm2.

DC CONDUCTION MECHANISMS IN Al–SnO2–Al STRUCTURE DEPOSITED BY THERMAL EVAPORATION

2008 ◽  
Vol 15 (03) ◽  
pp. 207-216
Author(s):  
M. ANWAR ◽  
I. M. GHAURI ◽  
S. A. SIDDIQI ◽  
NAVEED AFZAL
Keyword(s):  
Electrical Conductivity ◽  
Substrate Temperature ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Current Theory ◽  
Temperature Range ◽  
Conduction Mechanisms ◽  
Valence States ◽  
Metal Insulator Metal ◽  
Main Barrier

The DC conduction mechanisms in metal–insulator–metal sandwich structure based on amorphous thin films of SnO 2 have been studied in the thickness range 100–400 nm, in the substrate temperature range 293–543 K, and in the annealing temperature range 473–773 K, and the results are discussed in terms of current theory. It is observed that at low field and low temperature the conduction mechanism is found to obey the hopping model, at higher temperature the conduction takes place by transport in the extended states but at high field the main barrier lowering effect is associated with localized centers. The increase in electrical conductivity with film thickness is caused by the oxygen vacancies and [Formula: see text] defects which generate carriers in the films. The increase in electrical conductivity due to an increase in substrate temperature is ascribed to the increasing concentration of ionized donors and hoping of electrons between metal ions in two different valence states. The formation of tin species of lower valence states and doubly ionized oxygen vacancies are thought to be responsible for the increase in electrical conductivity at higher annealing temperature.

Tunable emission color and mixed valence state via the modified activator site in the AlN-doped Sr3SiO5:Eu phosphor

RSC Advances ◽  
2016 ◽  
Vol 6 (39) ◽  
pp. 33076-33082 ◽  
Author(s):  
Wei Li ◽  
Jin Wang ◽  
Haoran Zhang ◽  
Yingliang Liu ◽  
Bingfu Lei ◽  
...  
Keyword(s):  
Valence State ◽  
Mixed Valence ◽  
Mixed Valence State ◽  
Valence States ◽  
Emission Color ◽  
Co Doped ◽  
Tunable Emission

Mixed valence states of Eu2+/Eu3+ and tunable emission colors were obtained based on the activator-site modification in the AlN co-doped Sr3SiO5:Eu phosphor.

scholarly journals Dual Mode Diffusion and Sorption of Sodium Chloride in Pre-Cooked Potato (Solanum tuberosum L.)

2012 ◽  
Vol 2 (1) ◽  
pp. 66 ◽  
Author(s):  
Hiroko Hashiba ◽  
Hiromi Gocho ◽  
Jiro Komiyama
Keyword(s):  
Solanum Tuberosum ◽  
Diffusion Coefficients ◽  
Diffusion Rate ◽  
Solanum Tuberosum L ◽  
Sorption Isotherms ◽  
Egg White ◽  
Dual Mode ◽  
Temperature Range ◽  
Japanese Radish ◽  
Temperature Dependences

For cooked potato, we report maximum showing variations of the Fick’s diffusion coefficients, <em>D</em>, of NaCl with total salt concentration, <em>C</em><sub>t</sub>, in the foodstuff in the temperature range, 30-98°C. The variations were successfully explained with the dual mode diffusion and sorption theory, which has been successfully applied to the diffusion of NaCl in cooked Japanese radish, solidified egg white, and pork meats. The original theory (Komiyama &amp; Iijima, 1974) was revised by changing the definitions of the parameters for the presence of liquid water droplets in the foodstuffs. The sorption isotherms, being found to be almost linear with very slight concave upward curvatures, were explained by invoking the presence of the droplets. Two thermodynamic diffusion coefficients, <em>D</em><sub>T</sub>(p) and <em>D</em><sub>T</sub>(L), of NaCl of the partition and Langmuir type sorption species, respectively, in the diffusion rate determining region were estimated for the temperature range. The temperature dependences were found to show definite rises in the range of 50-70°C, suggesting the presence of a transition in the diffusion environment.

High-sensitivity and wide-temperature-range dual-mode optical thermometry under dual-wavelength excitation in novel double perovskite tellurate oxide

2021 ◽  
Author(s):  
Zhaojie Wu ◽  
Li Li ◽  
Guang Tian ◽  
Yongjie Wang ◽  
Faling Ling ◽  
...  
Keyword(s):  
Solid State ◽  
Wide Temperature Range ◽  
Solid State Reaction ◽  
Double Perovskite ◽  
High Sensitivity ◽  
Dual Wavelength ◽  
Dual Mode ◽  
Temperature Range ◽  
Optical Thermometry

Novel double perovskite SrLaLiTeO6 (abbreviated as SLLT): Mn4+, Dy3+ phosphors synthesized by solid-state reaction strategy exhibits distinct dual-emitting of Mn4+ and Dy3+. High-sensitivity and wide-temperature-range dual-mode optical thermometry was exploited...

Optical thermometry of MoS2:Eu3+ 2D luminescent nanosheets

2016 ◽  
Vol 4 (42) ◽  
pp. 9937-9941 ◽  
Author(s):  
Jing Liu ◽  
Rik Van Deun ◽  
Anna M. Kaczmarek
Keyword(s):  
Temperature Sensing ◽  
Sensing Properties ◽  
Temperature Range ◽  
Sensing Material ◽  
Emission Color ◽  
Optical Thermometry ◽  
Significant Change ◽  
Color Purple

We report a novel 2D MoS2:Eu3+ optical temperature sensing material, which has remarkable temperature sensing properties. A significant change in the emission color (purple to red) was observed in the temperature range of 60–360 K.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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