Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films

Polycrystalline GaN thin films were successfully grown at low temperature (250 °C) by plasma-enhanced atomic layer deposition with NH3, N2, N2/H2 gas mixture and trimethylgallium (TMG) as precusor. The growth rate, crystal structure, surface composition and the valence state of the corresponding element of the GaN thin films using different nitrogen sources were characterized and examined systematically via the spectroscopic ellipsometry, the x-ray diffractometer, the x-ray photoel-ectron spectrometer. It is showed that all the GaN thin films using different nitrogen sources were polycrystalline structure and the preffered orientation were mainly (100). The films using N2 and N2/H2 gas mixture had a higher crystal quality than films using NH3. The GPC (growth rate per cycle) would increase with the increase of the N2 flow rate. The films using a suitable ratio of N2/H2 flow rate had not only a high GPC but a good crystal quality. The ratios of Ga/N element of the films using N2/H2 gas mixture were approximated to 1:1, it would increase with the ratio of the N2/H2 flow rate in the gas mixture, which is showing much effect of the ratios of N2/H2 flow rate on the nitrogen content of the thin films.

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Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c01079 ◽

2021 ◽

Vol 3 (2) ◽

pp. 999-1005

Author(s):

Hyeok Jae Lee ◽

Jin Ha Hwang ◽

Ji-Yong Park ◽

Sang Woon Lee

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Titanium Nitride ◽

Surface Reaction ◽

Atomic Layer ◽

Reaction Route ◽

Layer Deposition

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Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.138 ◽

2015 ◽

Vol 764-765 ◽

pp. 138-142 ◽

Cited By ~ 1

Author(s):

Fa Ta Tsai ◽

Hsi Ting Hou ◽

Ching Kong Chao ◽

Rwei Ching Chang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Electric Properties ◽

X Ray Diffraction ◽

Layer Deposition ◽

Azo Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽

10.1039/d0ce01252a ◽

2021 ◽

Author(s):

Pengmei Yu ◽

Sebastian M. J. Beer ◽

Anjana Devi ◽

Mariona Coll

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Complex Oxide ◽

Oxide Thin Films ◽

Layer Deposition ◽

Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

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Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

Advanced Functional Materials ◽

10.1002/adfm.202102556 ◽

2021 ◽

pp. 2102556

Author(s):

Jinseon Lee ◽

Jeong‐Min Lee ◽

Hongjun Oh ◽

Changhan Kim ◽

Jiseong Kim ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition

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Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

Microscopy and Microanalysis ◽

10.1017/s1431927621009417 ◽

2021 ◽

Vol 27 (S1) ◽

pp. 2660-2662

Author(s):

David Elam ◽

Eduardo Ortega ◽

Andrey Chabanov ◽

Arturo Ponce

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Low Temperatures ◽

Atomic Layer ◽

Structural Defects ◽

Zno Thin Films ◽

Layer Deposition

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HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

Dalton Transactions ◽

10.1039/d1dt01232k ◽

2021 ◽

Author(s):

Yuanyuan Cao ◽

Sha Zhu ◽

Julien Bachmann

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Room Temperature ◽

Atomic Layer ◽

Two Dimensional ◽

Molecular Precursors ◽

Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

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Retention of Surface Structure Causes Lower Density in Atomic Layer Deposition of Amorphous Titanium Oxide Thin Films

Physical Chemistry Chemical Physics ◽

10.1039/d1cp00341k ◽

2021 ◽

Author(s):

Benjamin Rich ◽

Yael Etinger-Geller ◽

G. Ciatto ◽

A Katsman ◽

Boaz Pokroy

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Surface Structure ◽

Titanium Oxide ◽

Size Effects ◽

Atomic Layer ◽

Tio2 Films ◽

Structural Modifications ◽

Layer Deposition ◽

Amorphous Tio2

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film’s...

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