Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films

The effect of RF power on the formation and morphology evolution of ZnO nanostructured thin films deposited by magnetron sputtering are presented. This project focused on electrical, optical and structural properties of ZnO thin films. The effect of variation of RF power at 50 watt-250 watt at 200 °C on glass substrate of the ZnO thin films was investigated. The thin films were examined for electrical properties and optical properties using two point probe current-voltage (I-V) measurement (Keithley 2400) and UV-Vis-NIR spectrophotometer (JASCO 670) respectively. The structural properties were characterized using field emission scanning electron microscope (FESEM) (JEOL JSM 7600F) and atomic force microscope (AFM) (Park System XE-100). The IV measurement indicated that at RF power 200 watt the conductivity of ZnO thin film show the highest. All films show high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). The root means square (rms) roughness for ZnO thin film were about 4 nm measured using AFM. The image form FESEM observed that transformation of structure size started to change as the RF power increase.

Download Full-text

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.626.168 ◽

2012 ◽

Vol 626 ◽

pp. 168-172

Author(s):

Samsiah Ahmad ◽

Nor Diyana Md Sin ◽

M.N. Berhan ◽

Mohamad Rusop

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Structural Properties ◽

Rf Magnetron Sputtering ◽

Xrd Analysis ◽

Zno Thin Films ◽

Rf Power ◽

Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

Download Full-text

Optical, Structural, and Crystal Defects Characterizations of Dip Synthesized (Fe-Ni) Co-Doped ZnO Thin Films

Materials ◽

10.3390/ma13071737 ◽

2020 ◽

Vol 13 (7) ◽

pp. 1737 ◽

Cited By ~ 3

Author(s):

Ahmad M. Alsaad ◽

Ahmad A. Ahmad ◽

Qais M. Al-Bataineh ◽

Areen A. Bani-Salameh ◽

Hadeel S. Abdullah ◽

...

Keyword(s):

Thin Films ◽

Structural Properties ◽

Sol Gel ◽

Dip Coating ◽

Crystal Defects ◽

Nanocomposite Films ◽

Zno Thin Films ◽

Line Profile Analysis ◽

Doped Zno ◽

Co Doped

Sol-gel technique is used to synthesize as-grown zinc oxide (ZnO) and iron-nickel (Fe-Ni) co-doped ZnO thin films deposited on glass substrates using dip coating technique. The structural properties and crystal imperfections of as-prepared thin films are investigated. We performed the structural analysis of films using X-ray diffraction (XRD). The XRD analysis reveal that the as-prepared films exhibit wurtzite structure. Furthermore, XRD-line profile analysis is performed to study the correlation between structural properties and imperfections of the nanocomposite thin films. The crystallite size and microstrains parameters are predicted using the Williamson–Hall method. We found that the crystallites size increases as the co-doped (Fe-Ni) concentration is increased. However, microstrains of the nanocomposite films decreases as (Fe-Ni) concentration is increased. The optical properties of the (Fe-Ni) co-doped nanocomposite films are investigated by performing UV-Vis (250 nm–700 nm) spectrophotometer measurements. We found that as the (Fe-Ni) concentration level is steadily increased, transmittance of the undoped ZnO thin films is decreased. Remarkably, refractive index of undoped ZnO thin films is found to exhibit values extending from 1.55 to1.88 that would increase as (Fe-Ni) concentration is increased.

Download Full-text