Optimization of the Broadband Reflectance of Graded Multilayers for Hard X-Ray Mirrors

1999 ◽  
Vol 586 ◽  
Author(s):  
Adrian Ivana ◽  
Ricardo Brunia ◽  
Kyung Byuna ◽  
Paul Gorensteina ◽  
Suzanne Romaine

ABSTRACTMultilayer structures with depth graded spacing can present a high reflectivity in a broad energy bandpass for hard X-rays (>20 keV) if the interface roughness/diffuseness is controlled and minimized. We present an optimization study of several multilayer systems deposited by DC magnetron sputtering on <111> silicon wafer substrates. The material combinations presented in this work are W/Si, W/C, Wsi2/Si, Pt/C, Ni/C, and Mo/Si.

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 599
Author(s):  
Handan Huang ◽  
Li Jiang ◽  
Yiyun Yao ◽  
Zhong Zhang ◽  
Zhanshan Wang ◽  
...  

The laterally graded multilayer collimator is a vital part of a high-precision diffractometer. It is applied as condensing reflectors to convert divergent X-rays from laboratory X-ray sources into a parallel beam. The thickness of the multilayer film varies with the angle of incidence to guarantee every position on the mirror satisfies the Bragg reflection. In principle, the accuracy of the parameters of the sputtering conditions is essential for achieving a reliable result. In this paper, we proposed a precise method for the fabrication of the laterally graded multilayer based on a planetary motion magnetron sputtering system for film thickness control. This method uses the fast and slow particle model to obtain the particle transport process, and then combines it with the planetary motion magnetron sputtering system to establish the film thickness distribution model. Moreover, the parameters of the sputtering conditions in the model are derived from experimental inversion to improve accuracy. The revolution and rotation of the substrate holder during the final deposition process are achieved by the speed curve calculated according to the model. Measurement results from the X-ray reflection test (XRR) show that the thickness error of the laterally graded multilayer film, coated on a parabolic cylinder Si substrate, is less than 1%, demonstrating the effectiveness of the optimized method for obtaining accurate film thickness distribution.


2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.


2009 ◽  
Vol 1156 ◽  
Author(s):  
Fridrik Magnus ◽  
Arni Sigurdur Ingason ◽  
Sveinn Olafsson ◽  
Jon Tomas Gudmundsson

AbstractUltrathin TiN films were grown by reactive dc magnetron sputtering on amorphous SiO2 substrates and single-crystalline MgO substrates at 600°C. The resistance of the films was monitored in-situ during growth to determine the coalescence and continuity thicknesses. TiN films grown on SiO2 are polycrystalline and have coalescence and continuity thicknesses of 8 Å and 19 Å, respectively. TiN films grow epitaxially on the MgO substrates and the coalescence thickness is 2 Å and the thickness where the film becomes continuous cannot be resolved from the coalescence thickness. X-ray reflection measurements indicate a significantly higher density and lower roughness of the epitaxial TiN films.


Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 253 ◽  
Author(s):  
Wei-Chun Chen ◽  
Chao-Te Lee ◽  
James Su ◽  
Hung-Pin Chen

Zirconium diboride (ZrB2) thin films were deposited on a Si(100) substrate using pulsed direct current (dc) magnetron sputtering and then annealed in high vacuum. In addition, we discussed the effects of the vacuum annealing temperature in the range of 750 to 870 °C with flowing N2 on the physical properties of ZrB2 films. The structural properties of ZrB2 films were investigated with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns indicated that the ZrB2 films annealed at various temperatures exhibited a highly preferred orientation along the [0001] direction and that the residual stress could be relaxed by increasing the annealing temperature at 870 °C in a vacuum. The surface morphology was smooth, and the surface roughness slightly decreased with increasing annealing temperature. Cross-sectional TEM images of the ZrB2/Si(100) film annealed at 870 °C reveals the films were highly oriented in the direction of the c-axis of the Si substrate and the film structure was nearly stoichiometric in composition. The XPS results show the film surfaces slightly contain oxygen, which corresponds to the binding energy of Zr–O. Therefore, the obtained ZrB2 film seems to be quite suitable as a buffer layer for III-nitride growth.


2015 ◽  
Vol 754-755 ◽  
pp. 591-594
Author(s):  
Haslinda Abdul Hamid ◽  
M.N. Abdul Hadi

The codoped ZnO thin film were deposited by DC magnetron sputtering on silicon (111) followed by annealing treatment at 200 °C and 600 °C for 1 hour in nitrogen and oxygen gas mixture. Structural investigation was carried out by scanning electron microscopy (SEM), atomic force microscopy and x-ray diffraction (XRD). Film roughness and grain shape were found to be correlated with the annealing temperatures.


1999 ◽  
Vol 593 ◽  
Author(s):  
F.L. Freire ◽  
L.G. Jacobsohn ◽  
D.F. Franceschini ◽  
S.S. Camargo

ABSTRACTAmorphous carbon films were deposited onto (100) Si crystals and onto ultra-pure Al foils by dc-magnetron sputtering with different Ar plasma pressures, from 0.17 to 1.4 Pa. We investigate the voids structure and the voids density in these films by means of small angle x-ray scattering (SAXS) and mass spectrometry of effused gases. The analysis of the effusion spectra provided clear evidence that films deposited at lower pressures are compact, while the films deposited at higher pressure present a more open structural arrangement, confirming density results obtained by using ion beam techniques. SAXS results reveal that the fraction of open volumes increases with the plasma pressure: a direct correlation between film density and open volume fraction is found. These different film microstructures could be explained by the existence of different bombarding regimes during film growth


1998 ◽  
Vol 551 ◽  
Author(s):  
A. Ivan ◽  
R. Bruni ◽  
K. Byun ◽  
J. Everett ◽  
P. Gorenstein ◽  
...  

AbstractSeveral multilayer test coatings for hard X-ray telescopes were fabricated using DC magnetron sputtering. The process parameters were selected from a series of trials of single layer depositions. The samples were characterized using X-ray specular reflectivity scans, AFM, and cross-sectional TEM. Additional measurements (stylus profilometry, RBS, and Auger analysis) were used in the optimization of the deposition rate and of the thin film properties (density, composition, surface/interface microroughness). The X-ray reflectivity scans showed that the combinations of reflector and spacer materials tested so far (W/Si and W/C) are suited for graded d-spacing multilayer coatings that present a constant reflectivity bandpass up to 70 keV.


2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.


2019 ◽  
Vol 27 (08) ◽  
pp. 1950188
Author(s):  
A. ALKHAWWAM ◽  
B. ABDALLAH ◽  
A. K. JAZMATI ◽  
M. TOOTANJI ◽  
F. LAHLAH

In this work, TiAlV thin films have been prepared on two different types of substrates: silicon and stainless steel (SS304) by two deposition methods: Pulsed Laser Deposition (PLD) and DC magnetron sputtering. Different techniques have been employed in order to characterize film properties such as: Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-ray (EDX), X-ray diffraction (XRD), microhardness and corrosion test. EDX analysis showed that the deposited films are slightly different from that of the target material Ti6Al4V alloy. The measured microhardness values are about 11.7[Formula: see text]GPa and 4.7[Formula: see text]GPa for films prepared by PLD and DC magnetron sputtering, respectively. Corrosion test indicated that the corrosion resistance of the two TiAlV films deposited on SS304 substrates in (0.9% NaCl) physiological normal saline medium was significantly improved compared with the SS304 substrates. These attractive results could permit applications of our films in the medical implants fabrication.


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