Deposition of pure Cu films on glass substrates by decomposition of Cu complex pastes at 250 °C and additional Cu plating

2019 ◽  
Vol 473 ◽  
pp. 359-365 ◽  
Author(s):  
Chang Hyun Lee ◽  
Chang-Yong Hyun ◽  
Jong-Hyun Lee
Keyword(s):  
Cu Films ◽  
Glass Substrates ◽  
Cu Complex ◽  
Pure Cu

P‐46: Fabrication and characterization of thick Cu films deposited on G8.5 LCD glass substrates for 8k and large TV panels

2020 ◽  
Vol 51 (1) ◽  
pp. 1519-1522
Author(s):  
Guo Li ◽  
Xia Hui ◽  
Tan Zhiwei ◽  
Xiao Juncheng ◽  
Zhou Hang
Keyword(s):  
Cu Films ◽  
Glass Substrates ◽  
Fabrication And Characterization

scholarly journals Microstructural Effects on the Interfacial Adhesion of Nanometer-Thick Cu Films on Glass Substrates: Implications for Microelectronic Devices

2020 ◽  
Author(s):  
Alice Lassnig ◽  
Velislava L. Terziyska ◽  
Jakub Zalesak ◽  
Tanja Jörg ◽  
Daniel M. Toebbens ◽  
...  
Keyword(s):  
Interfacial Adhesion ◽  
Cu Films ◽  
Glass Substrates ◽  
Microelectronic Devices ◽  
Microstructural Effects

Copper Chemical Vapor Deposition using a Novel Cu(II) Precursor for Contact Via Filling Process

2007 ◽  
Vol 990 ◽  
Author(s):  
Hideaki Zama ◽  
Yuuji Nishimura ◽  
Michiyo Yago ◽  
Mikio Watanabe
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Reduction ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Cu Films ◽  
Pure Cu ◽  
Substrate Temperatures ◽  
Advanced Generation

ABSTRACTChemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.

Mocvd of Copper from New and Liquid Precursors (hfac)CuL, Where L = 1-Pentene, Atms, and Vtmos

1996 ◽  
Vol 427 ◽  
Author(s):  
H. K. Shin ◽  
H. J. Shin ◽  
S. J. Lim ◽  
D. J. Yoo ◽  
N. Y. Oh ◽  
...  
Keyword(s):  
Deposition Temperature ◽  
Free Ligand ◽  
Copper Deposition ◽  
Cu Films ◽  
Temperature Range ◽  
Liquid Precursors ◽  
Pure Cu

AbstractLiquid and volatile (hfac)CuL compounds where hfac = 1,1,1,5,5,5-hexafluoro- 2,4-pentanedionate and L = 1-pentene (1), acetyltrimethylsilane (2), and vinyltri- methoxysilane (3) were newly developed for reproducible copper deposition. During CVD processes, no premature decomposition of the precursor was observed in the source reservoir that contained the mixture of (hfac)CuL and excess free ligand L. Pure Cu films were deposited in the deposition temperature range 180°C ˜ 220°C

Sputtered Cu Films Containing Various Insoluble Substances for Advanced Barrierless Metallization

2007 ◽  
Vol 539-543 ◽  
pp. 3497-3502 ◽  
Author(s):  
J.P. Chu ◽  
C.H. Lin
Keyword(s):  
Thermal Stability ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
The Other ◽  
Oxide Semiconductor ◽  
Good Thermal Stability ◽  
Cu Films ◽  
Pure Cu ◽  
Thermal Stability Of

Sputtered Cu films containing various insoluble substances, such as Cu(W2.3), Cu(Mo2.0), Cu(Nb0.4), Cu(C2.1) and Cu(W0.4C0.7), are examined in this study. These films are prepared by magnetron sputtering, followed by thermal annealing. The crystal structure, microstructure, SIMS depth-profiles, leakage current, and resistivity of the films are investigated. Good thermal stability of these Cu films is confirmed with focused ion beam, X-ray diffractometry, SIMS, and electrical property measurements. After annealing at 400°C, obvious drops in resistivity, to ~3.8 μ-cm, are seen for Cu(W) film, which is lower than the other films. An evaluation of the leakage current characteristic from the SiO2/Si metal-oxide-semiconductor (MOS) structure also demonstrates that Cu with dilute tungsten is more stable than the other films studied. These results further indicate that the Cu(W) film has more thermal stability than the Cu(Mo), Cu(Nb), Cu(C), Cu(WC) and pure Cu films. Therefore, the film is suitable for the future barrierless metallization.

X-Ray Diffraction and TEM Studies of the Delamination of Copper Thin Films from Glass and Silica Substrates

1989 ◽  
Vol 167 ◽  
Author(s):  
Alan G. Fox ◽  
Rowland M. Cannon
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Bragg Diffraction ◽  
Slight Reduction ◽  
X Ray Diffraction ◽  
Dislocation Generation ◽  
X Ray ◽  
Cu Films ◽  
Glass Substrates ◽  
Tensile Strains

AbstractThe events associated with fractures along interfaces between copper thin films and glass substrates were investigated by X-ray diffraction and transmission electron microscopy (TEM). In the as-bonded films the Bragg diffraction lines were shifted and broadened (relative to pure strain-free copper) due to residual in-plane tensile strains arising from the differences in thermal contraction between the copper and the substrates; TEM studies of these films in cross-section showed that the residual stresses had been relieved somewhat by dislocation densities as high as 1010 lines/cm2 in Cu/SiO2 films.The passage of a crack along the Cu/glass interfaces led to a significant reduction in the line shift and a slight reduction in the line broadening. Thus dislocations generated by the fracture events ‘plastically relaxed’ the residual stresses present in the as-bonded Cu by superposing a compressive component onto the pre-existing in-plane tensile strains. This dislocation generation was confirmed by TEM studies. In addition, it was found that the greater the strength of an interface, the greater was the reduction in mean strain due to the fracture; this is consistent with a larger crack-tip plastic zone and the generation of greater numbers of dislocations in the Cu films by fracture along interfaces of higher toughness (i.e. bond strength).

Thermal stability of sputtered copper films containing dilute insoluble tungsten: Thermal annealing study

2003 ◽  
Vol 18 (6) ◽  
pp. 1429-1434 ◽  
Author(s):  
C. H. Lin ◽  
J. P. Chu ◽  
T. Mahalingam ◽  
T. N. Lin ◽  
S. F. Wang
Keyword(s):  
Thermal Stability ◽  
Thermal Annealing ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Silicide Formation ◽  
Copper Silicide ◽  
Cu Films ◽  
Cu Film ◽  
Pure Cu ◽  
Thermal Stability Of

This paper describes studies on the thermal annealing behavior of Cu films with 2.3 at.% W deposited on Si substrates. The magnetron cosputtered Cu films with insoluble W were vacuum annealed at temperatures ranging from 200 to 800 °C. Twins were observed in focused ion beam and transmission electron microscopy images of as-deposited and 400 °C annealed pure Cu film, and these twins were attributed to the intrinsic low stacking fault energy. Twins in pure Cu film may provide an additional diffusion path during annealing for copper silicide formation. The beneficial effect of W on the thermal stability of Cu film was supported by the following observations: (i) x-ray diffraction studies show that Cu4Si was formed at 530 °C in Cu–W film, whereas pure Cu film exhibited Cu4Si growth at 400 °C; (ii) shallow diffusion profiles for Cu into Si in Cu–W film through secondary ion mass spectroscopy analyses, and the high activation energy needed for the copper silicide formation from the differential scanning calorimetry study; (iii) addition of W in Cu film increases the stacking fault energy and results in a low twin density.

Laser Ablated CuCo Thin Films Exhibiting Controlled Anisotropic Giant Magnetoresistance

1998 ◽  
Vol 526 ◽  
Author(s):  
Vicente Madurga ◽  
J. Vergara ◽  
R.J. Ortega ◽  
K.V. Rao
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Giant Magnetoresistance ◽  
Nominal Composition ◽  
Target Speed ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Speed Rotation ◽  
Co Nanoparticles ◽  
Pure Cu

AbstractControlled microstructured thin films with nominal composition Cu95Co5 have been deposited on glass substrates by pulsed laser ablation at room temperature, in vacuum, for different target speed rotation. Atomic Force Microscopy, AFM, studies have shown a surface roughness not higher than 0.5 nm, for the as-deposited samples, which do not exhibit magnetoresistive, MR, behaviour. X-ray diffraction analysis show broad diffraction peaks, slightly shifted from pure Cu reflection peaks. After annealing, the samples show GMR. The AFM investigations reveal a surface roughness of =6.8 nm and =9.2 nm for the samples prepared with high and low target speed rotation, respectively. Furthermore the GMR data correspond to a strong anisotropic behaviour. A reversible MR is exhibited, for all the films, exclusively for perpendicular to the films plane applied magnetic field. Hysteretic MR behaviour is observed for any other direction: in the range of 70-80 deg., coercive MR fields from 0.17 Tesla to 0.05 Tesla are observed for the samples obtained at 10 rpm to 32 rpm respectively target speed rotation. These properties are discussed in terms of the shape anisotropy of magnetic Co nanoparticles.

Nanocharacterization of Texture and Hillock Formation in Thin Al And Al-0.2%Cu Films for Thin-Film Transistors

1996 ◽  
Vol 441 ◽  
Author(s):  
H. Takatsuji ◽  
S. Tsuji ◽  
H. Kitahara ◽  
K. Tsujimoto ◽  
K. Kuroda ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Layer Structure ◽  
Liquid Crystal Display ◽  
Migration Test ◽  
Cross Sectional ◽  
Cu Films ◽  
Glass Substrates ◽  
Hillock Formation ◽  
Cu Thin Film

AbstractThe relation between the nanostructure of pure Al and Al-0.2 wt.% Cu thin films on glass substrates and anti-stress migration properties were investigated. These films were deposited on liquid-crystal display (LCD) grade glass substrate (550 x 650 mm) by means of two types of dc magnetron multi-chamber sputtering apparatus.We developed the nanoindentation techniques to accelerate the characterization time for stress migration test. By AFM and cross-sectional TEM observations, we found an unusual three-layer structure in a Al-Cu thin film with strong anti-stress migration property.

THE ADHESION OF COPPER FILMS COATED ON SILICON AND GLASS SUBSTRATES

2000 ◽  
Vol 14 (03) ◽  
pp. 103-108 ◽  
Author(s):  
M. CHEN ◽  
J. GAO
Keyword(s):  
Vickers Microhardness ◽  
Deformation Mode ◽  
Copper Films ◽  
Micro Hardness ◽  
Adhesion Properties ◽  
Cu Films ◽  
Glass Substrates ◽  
Hardness Model ◽  
Composite Hardness ◽  
Hard Substrates

A new method is developed to evaluate the adhesion properties of thin films. This method is based on a composite hardness model. In our experiments, Cu films which were deposited on Si and glass substrates by pulsed laser ablation were indented and scratched by a Vickers microhardness tester and a diamond cutter, respectively. It was found that adhesion influenced the micro-hardness of films for soft films deposited on hard substrates. This result was explained by the elastic–plastic deformation mode of indentation.

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