Organosiloxane nanolayer as diffusion barrier for Cu Metallization on Si

2021 ◽  
pp. 150800
Author(s):  
Yan-Ping Zhang ◽  
Manik Chandra Sil ◽  
Chih-Ming Chen
1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.


Vacuum ◽  
2010 ◽  
Vol 84 (11) ◽  
pp. 1270-1274 ◽  
Author(s):  
Wang Qingxiang ◽  
Liang Shuhua ◽  
Wang Xianhui ◽  
Fan Zhikang

1999 ◽  
Vol 85 (9) ◽  
pp. 6898-6903 ◽  
Author(s):  
Joon Seop Kwak ◽  
Hong Koo Baik ◽  
Jong-Hoon Kim ◽  
Sung-Man Lee ◽  
Hyuk Ju Ryu ◽  
...  

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