Interface engineering to optimize polarization and electric breakdown strength of Ba2Bi3.97Pr0.03Ti5O18/BiFeO3 ferroelectric thin-film for high-performance capacitors

2021 ◽  
pp. 133676
Author(s):  
Peng Wang ◽  
Xusheng Wang ◽  
Guorong Li ◽  
Yanxia Li ◽  
Xi Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Breakdown Strength ◽  
Ferroelectric Thin Film ◽  
Electric Breakdown ◽  
Interface Engineering

Fullerene-derivative as interlayer for high performance organic thin-film transistors

2018 ◽  
Vol 6 (22) ◽  
pp. 6052-6057 ◽  
Author(s):  
Jiahui Tan ◽  
Jakob Sorensen ◽  
Huanli Dong ◽  
Wenping Hu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Fullerene Derivative ◽  
Organic Thin Film ◽  
Interface Engineering ◽  
Engineering Strategy

The present work demonstrates a new interface engineering strategy to improve pentacene transistors performance by using a fullerene-derivative interlayer.

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

2020 ◽  
Vol 30 (34) ◽  
pp. 2003285 ◽  
Author(s):  
Yepin Zhao ◽  
Zhengxu Wang ◽  
Guangwei Xu ◽  
Le Cai ◽  
Tae‐Hee Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Interface Engineering ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Interface Engineering With Polystyrene for High-Performance, Low-Voltage Driven Organic Thin Film Transistor

2020 ◽  
Vol 67 (4) ◽  
pp. 1751-1756
Author(s):  
Md. Mehedi Hasan ◽  
Md. Mobaidul Islam ◽  
Xiuling Li ◽  
Mingqian He ◽  
Robert Manley ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Interface Engineering ◽  
Organic Thin Film Transistor

Effects of Imidization Process on the Electric Breakdown Strength of Polyimide Thin Film

2017 ◽  
Vol 868 ◽  
pp. 248-253
Author(s):  
Jun Sheng Liang ◽  
Xu Fang ◽  
Jin He Yang ◽  
Tong Qun Ren ◽  
Da Zhi Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Performance Index ◽  
Breakdown Strength ◽  
Dominant Role ◽  
Electric Breakdown ◽  
Temperature Profiles ◽  
Dc Voltage ◽  
Thermal Imidization

The electric breakdown voltage (Vbd) is a fundamental performance index for insulation thin film in MEMS, and plays a dominant role for the operation reliability of this kind of devices. In this work, positive polyimide (PI) photoresist was used to prepare thin films by spin-coating and thermal imidization. Electric breakdown experiments were carried out under DC voltage mode. The effect of imidization temperature on Vbd was also studied by setting three different imidization temperature profiles. XRD was applied to test the composition and microstructure of the PI thin films. Results show that the imidization degree of the PI thin film will be increased with the raising of the imidization temperature from 280 to 350°C. This means that a more completed imidization process can be achieved in the PI thin film by using higher imidization temperature. The highest Vbd of about 2740V and an average Vbd of 343kV/mm can be achieved on a 8.5μm thick PI thin film imidized at 350°C.

Using Ferroelectric Thin Film as the Dielectric for Electrowetting-on-Dielectric

2016 ◽  
Vol 697 ◽  
pp. 227-230 ◽  
Author(s):  
Jia Qi Niu ◽  
Zhen Kun Xie ◽  
Zhen Xing Yue ◽  
Wei Qiang Wang
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
High Performance ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Ceramic ◽  
Frequency Change ◽  
Electrowetting On Dielectric ◽  
Pzt Thin Film ◽  
High Dielectric ◽  
Film Dielectric

In this paper, the dielectric and electrowetting properties of Pb (Zr0.4Ti0.6)O3 (PZT) ferroelectric thin film are studied as the dielectric layer in electrowetting-on-dielectric (EWOD) device. The PZT thin film is formed by spin-coating, pyrolysis and annealing. The characterization results show that PZT thin film can serve as the dielectric of EWOD with a high dielectric constant and a great electrowetting performance when used in silicon oil bath environment. To test the electrowetting effect, a EWOD device with 200nm thick PZT ferroelectric thin film dielectric layer is fabricated. The variation of contact angle between droplet and device surface achieved with DC voltage, AC voltage and AC frequency change of electrowetting on PZT are fully experimented. The EWOD device with PZT dielectric layer can manipulate water droplet at low driving voltages. This study shows the potential of using ferroelectric ceramic material as the dielectric layer in high-performance EWOD devices.

scholarly journals Flexible Lead-Free Ba0.5Sr0.5TiO3/0.4BiFeO3-0.6SrTiO3 Dielectric Film Capacitor with High Energy Storage Performance

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3065
Author(s):  
Wenwen Wang ◽  
Jin Qian ◽  
Chaohui Geng ◽  
Mengjia Fan ◽  
Changhong Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Storage ◽  
Power Systems ◽  
Breakdown Strength ◽  
Ferroelectric Thin Film ◽  
High Energy ◽  
Relaxor Behavior ◽  
Wearable Electronics ◽  
Film Capacitor ◽  
Bending Radius

Ferroelectric thin film capacitors have triggered great interest in pulsed power systems because of their high-power density and ultrafast charge–discharge speed, but less attention has been paid to the realization of flexible capacitors for wearable electronics and power systems. In this work, a flexible Ba0.5Sr0.5TiO3/0.4BiFeO3-0.6SrTiO3 thin film capacitor is synthesized on mica substrate. It possesses an energy storage density of Wrec ~ 62 J cm−3, combined with an efficiency of η ~ 74% due to the moderate breakdown strength (3000 kV cm−1) and the strong relaxor behavior. The energy storage performances for the film capacitor are also very stable over a broad temperature range (−50–200 °C) and frequency range (500 Hz–20 kHz). Moreover, the Wrec and η are stabilized after 108 fatigue cycles. Additionally, the superior energy storage capability can be well maintained under a small bending radius (r = 2 mm), or after 104 mechanical bending cycles. These results reveal that the Ba0.5Sr0.5TiO3/0.4BiFeO3-0.6SrTiO3 film capacitors in this work have great potential for use in flexible microenergy storage systems.

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