Resistive random access memory based on gallium oxide thin films for self-powered pressure sensor systems

2020 ◽  
Vol 46 (13) ◽  
pp. 21141-21148
Author(s):  
Zhengchun Yang ◽  
Jianwen Wu ◽  
Peijun Li ◽  
Yuting Chen ◽  
Yu Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pressure Sensor ◽  
Gallium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Sensor Systems ◽  
Oxide Thin Films ◽  
Access Memory ◽  
Self Powered

Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory

2010 ◽  
Vol 1250 ◽  
Author(s):  
Yusuke Nishi ◽  
Tatsuya Iwata ◽  
Tsunenobu Kimoto
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Admittance Spectroscopy ◽  
Low Oxygen ◽  
Access Memory ◽  
Switching Operation ◽  
Defect Levels

AbstractAdmittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions (x=1.0-1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition (x≤1.07) are 120-170 meV and lower than 2×1019 cm-3, respectively. From I-V measurement of the Pt/NiOx/Pt structures, samples with high oxygen composition (x≥1.10) did not show resistance switching operation, while samples with low oxygen composition (x≤1.07) did. The best oxygen composition of NiOx thin films turned out to be 1.07 in order to realize repeatable and stable resistance switching operation.

Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films

Nanoscale ◽  
2018 ◽  
Vol 10 (28) ◽  
pp. 13443-13448 ◽  
Author(s):  
Yoonho Ahn ◽  
Hyun Wook Shin ◽  
Tae Hoon Lee ◽  
Woo-Hee Kim ◽  
Jong Yeog Son
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Memory Switching ◽  
Switching Characteristics

We report the effects of bottom electrode shapes on resistive random-access memory (RRAM) devices composed of Nb (bottom electrode)/NiO (dielectric)/Nb (top electrode) structures.

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