Comparison of surface and subsurface damage of mosaic single-crystal diamond substrate processed by mechanical and plasma-assisted polishing

2021 ◽  
pp. 108555
Author(s):  
Nian Liu ◽  
Hideaki Yamada ◽  
Naoya Yoshitaka ◽  
Kentaro Sugimoto ◽  
Rongyan Sun ◽  
...  
Keyword(s):  
Single Crystal ◽  
Subsurface Damage ◽  
Diamond Substrate ◽  
Single Crystal Diamond

scholarly journals Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5964
Author(s):  
Guoqing Shao ◽  
Juan Wang ◽  
Shumiao Zhang ◽  
Yanfeng Wang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Cross Section ◽  
Growth Model ◽  
Diamond Growth ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Step Flow Growth

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

scholarly journals 708 Atomic-scale flattening method for single-crystal diamond substrate

2014 ◽  
Vol 2014.67 (0) ◽  
pp. _708-1_-_708-3_
Author(s):  
Shin NAGAE ◽  
Yusuke ARAO ◽  
Akihisa KUBOTA ◽  
Mutsumi TOUGE ◽  
Shinichi SHIKATA ◽  
...  
Keyword(s):  
Single Crystal ◽  
Atomic Scale ◽  
Diamond Substrate ◽  
Single Crystal Diamond

scholarly journals Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Nian Liu ◽  
Kohki Sugawara ◽  
Naoya Yoshitaka ◽  
Hideaki Yamada ◽  
Daisuke Takeuchi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Removal Rate ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Highly Efficient ◽  
Atomic Force ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Measurement Results

Abstract Plasma-assisted polishing (PAP) as a damage-free and highly efficient polishing technique has been widely applied to difficult-to-machine wide-gap semiconductor materials such as 4H-SiC (0001) and GaN (0001). In this study, a 20-mm square large mosaic single crystal diamond (SCD) substrate synthesized by microwave plasma chemical vapor deposition (CVD) was polished by PAP. Argon-based plasma containing oxygen was used in PAP to modify the surface of quartz glass polishing plate, and a high material removal rate (MRR) of 13.3 μm/h was obtained. The flatness of SCD polished by PAP measured by an interferometer was 0.5 μm. The surface roughness measured by both scanning white light interferometer (SWLI) (84-μm square) and atomic force microscope (AFM) (5-μm square) was less than 0.5 nm Sq. The micro-Raman spectroscopy measurement results of mosaic SCD substrate processed by PAP showed that residual stress and non-diamond components on the surface after PAP processing were below the detection limit.

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

2009 ◽  
Vol 311 (21) ◽  
pp. 4539-4542 ◽  
Author(s):  
A. Dussaigne ◽  
M. Malinverni ◽  
D. Martin ◽  
A. Castiglia ◽  
N. Grandjean
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Diamond Substrate ◽  
Single Crystal Diamond

Homoepitaxial Mosaic Growth and Liftoff of Diamond Films

1995 ◽  
Vol 416 ◽  
Author(s):  
Pehr E. Pehrsson ◽  
Terri Mccormick ◽  
W. Brock Alexander ◽  
Mike Marchywka ◽  
David Black ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Defect Density ◽  
Diamond Films ◽  
Subsurface Damage ◽  
Diamond Lattice ◽  
Large Area ◽  
Damage Layer ◽  
Single Crystal Diamond ◽  
Homoepitaxial Layers

ABSTRACTGrowth of large area, single or almost single crystal diamond is of great importance to the electronics industry. In this work, single crystal diamonds were implanted with C+ ions, inducing a subsurface damage layer in the diamond lattice. Homoepitiaxial diamond films were then grown on the implanted crystals using a microwave plasma CVD reactor. Films grown on on-axis substrates were dominated by large numbers of hillocks, renucleation and penetration twins, while miscut substrates exhibited stepflow growth. The homoepitaxial layers were separated from the substrate by a water-based etch which selectively attacks the subsurface damage layer of the diamond lattice. The films were analyzed by Raman scattering, scanning electron microscopy (SEM), optical microscopy, photo- and cathodoluminescence, and x-ray diffraction. CVD growth on adjacent, oriented substrates formed a single, continuous diamond layer. The resulting homoepitaxial film quality, orientation, defect density and it's relationship to the underlying substrates were compared at various points on the surface, particularly the region which overgrew the gap between different substrates.

Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

MRS Advances ◽  
2016 ◽  
Vol 1 (16) ◽  
pp. 1099-1104 ◽  
Author(s):  
Z.C. Liu ◽  
F.N. Li ◽  
W. Wang ◽  
J.W. Zhang ◽  
F. Lin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Layer ◽  
Three Dimensional ◽  
Electrode Structure ◽  
Tungsten Electrodes ◽  
High Pressure High Temperature ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
New Type ◽  
Different Depths

AbstractThe performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-high-temperature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.

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