scholarly journals Studies on the Energy Band Discontinuities in SnS/ZnMgO Thin Film Heterojunction

2011 ◽  
Vol 10 ◽  
pp. 172-176 ◽  
Author(s):  
K. T. Ramakrishna Reddy ◽  
K. Ramya ◽  
G. Sreedevi ◽  
T. Shimizu ◽  
Y. Murata ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Band ◽  
Znmgo Thin Film

Cadmium metavanadate mixed oxide nanorods for the chemiresistive detection of methane molecules

2020 ◽  
Vol 44 (29) ◽  
pp. 12473-12485 ◽  
Author(s):  
Veena Mounasamy ◽  
Ganesh Kumar Mani ◽  
Dhivya Ponnusamy ◽  
Kazuyoshi Tsuchiya ◽  
P. R. Reshma ◽  
...  
Keyword(s):  
Thin Film ◽  
Mixed Oxide ◽  
Energy Band ◽  
Gas Sensing ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Band Bending ◽  
Sensing Mechanism ◽  
Oxide Nanorods

An energy band diagram of the V2O5–CdO thin film and illustration of the methane (CH4) gas sensing mechanism with band bending.

Analysis of Defects and Surface Roughness on the Hydrogenated Amorphous Silicon (a-Si:H) Intrinsic Thin Film for Solar Cells

2019 ◽  
Vol 966 ◽  
pp. 398-403
Author(s):  
Yoyok Cahyono ◽  
Novita Dwi Purnamasari ◽  
Mochamad Zainuri ◽  
Suminar Pratapa ◽  
Darminto
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Solar Cells ◽  
Band Gap ◽  
Indium Tin Oxide ◽  
Energy Band ◽  
Thin Layers ◽  
Oxide Glass ◽  
Energy Band Gap ◽  
Hydrogen Dilution

Effect of defect - through observation of energy absorption Urbach, on deposition rate, energy band gap, and surface roughness of intrinsic thin film are investigated using Radio Frequency Plasma Enhance Chemical Vapor Deposition (RF-PECVD). Films are grown on ITO (Indium Tin Oxide) glass substrate. Analysis of energy band gap is conducted to determine changes in the structure of a thin film of a-Si:H. Energy band gap is important to determine the portion of the spectrum of sunlight that is absorbed solar cells. From the characterization using UV-Vis spectrometer and the Tauc’s plot method, the width of the resulting energy band gap is greater if the hydrogen dilution is increased. It can be shown that the increase of the hydrogen dilution, will increase the energy band gap, and the surface roughness of thin layers. Instead, the improvement of the hydrogen dilution decrease the rate of deposition and Urbach energy. It is estimated that with greater hydrogen dilution, an intrinsic thin film of a-Si:H is more conductive for more reduction in residual of band tail defects or dangling bond defects.

Near-Infrared Photoresponsivity of ZnON Thin-Film Transistor with Energy Band-Tunable Semiconductor

2018 ◽  
Vol 10 (36) ◽  
pp. 30541-30547 ◽  
Author(s):  
Hyun-Mo Lee ◽  
Hyun-Jun Jeong ◽  
Kyung-Chul Ok ◽  
You Seung Rim ◽  
Jin-Seong Park
Keyword(s):  
Thin Film ◽  
Energy Band ◽  
Near Infrared ◽  
Thin Film Transistor

Properties of CuInS2 Thin Films Fabricated by SEL Method

Solar Energy ◽  
2005 ◽  
Author(s):  
Gye-Choon Park ◽  
Woon-Jo Jeong ◽  
Hyeon-Hun Yang ◽  
Hae-Duck Jung ◽  
Jin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Constant ◽  
Energy Band ◽  
Optical Energy ◽  
Glass Substrates ◽  
Cuins2 Thin Films ◽  
Sulfur Atmosphere ◽  
P Type

CuInS2 thin films were fabricated by sulphurization of S/In/Cu Stacked elemental layers (SEL) on slide glass substrates by annealing in vacuum of 10−3 Torr at temperature of 50 °C ∼ 350 °C. Some S/In/Cu SEL were vacuum annealed under a sulfur atmosphere. The thin films thus annealed were analyzed by measuring structural, electrical and optical properties. When CuInS2 thin films were made under a sulfur atmosphere, lattice constant of a and grain size of the thin film were a little larger than those in only vacuum annealing. The largest lattice constant of a and grain size was 5.63 Å and 1.2 μm respectively. Also, when the thin films were made under a sulfur atmosphere, conduction types were all p-type with resistivities of around 10−1 Ωcm and optical energy band gaps of the films were a little larger than those in only vacuum and the largest optical energy band gap of CuInS2 thin film was 1.53 eV.

Effect of UV-Ozone annealing on the transient characteristics of ZnMgO thin film UV-Vis photodetector

2020 ◽  
Author(s):  
Md Jawaid Alam ◽  
Madhuri Mishra ◽  
Punam Murkute ◽  
Sushama Sushama ◽  
Hemant Ghadi ◽  
...  
Keyword(s):  
Thin Film ◽  
Transient Characteristics ◽  
Znmgo Thin Film ◽  
Uv Ozone

scholarly journals Semiconductor TiO2 thin film as an electrolyte for fuel cells

2019 ◽  
Vol 7 (28) ◽  
pp. 16728-16734 ◽  
Author(s):  
Wenjing Dong ◽  
Yuzhu Tong ◽  
Bin Zhu ◽  
Haibo Xiao ◽  
Lili Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Fuel Cells ◽  
Energy Band ◽  
Tio2 Thin Film ◽  
Band Theory ◽  
Energy Band Theory

An SOFC using semiconductor TiO2 thin film as an electrolyte was designed using the energy band theory to prevent short-circuiting problem.

p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films

2013 ◽  
Vol 668 ◽  
pp. 681-685
Author(s):  
Ya Xue ◽  
Hai Ping He ◽  
Zhi Zhen Ye
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Zno Films ◽  
Electrical Measurements ◽  
Acceptor Dopant ◽  
Znmgo Thin Film ◽  
Effect Transistor ◽  
P Type

In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin films. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin film is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin films still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin film made it relatively stable when fabricating LEDs and other optoelectronic devices.

Modification of Optophysical Properties of Poly[(9,9-Di-N-Octylfluorenyl-2,7-Diyl)-Alt-(Benzo[2,1,3]Thiadiazol-4,8-Diyl)] Thin Film via Additions of TiO2 Nanoparticles

2017 ◽  
Vol 888 ◽  
pp. 357-361
Author(s):  
Siti Aishah Ahmad Fuzi ◽  
Mohammad Hafizuddin Hj Jumali ◽  
Bandar Ali Al-Asbahi ◽  
Kuan Ying Kok ◽  
Nur Ubaidah Saidin
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Emission Spectrum ◽  
Polymer Matrix ◽  
Energy Band ◽  
Intermediate Energy ◽  
Absorption Properties ◽  
Glass Substrates ◽  
Solution Blending ◽  
Vis Spectroscopy

The solution of poly [(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo [2,1,3] thiadiazol-4,8-diyl)] (F8BT) F8BT/TiO2 nanocomposites were prepared using solution blending methods. The TiO2 contents were fixed between 0 wt% - 35 wt%. Then, the solutions were spin coated at 1000 rpm for 30 s onto glass substrates to form thin film samples. The optical properties of the nanocomposites were determined using UV-Vis spectroscopy and photoluminescence spectroscopy. The absorption properties of the thin film increased due to existence of intermediate energy band which lead to higher space charge regions for electron insertion. Besides that, the λmax for absorption and emission spectrum were systematically shifted due to incorporation of TiO2 NPs indicating an interaction between nanoparticles and polymer matrix. Furthermore, the intensity of the emission spectrum were enhanced in the presence of TiO2 NPs. This is due to the existence of TiO2 NPs which trapped more electrons at the interface F8BT/TiO2, resulted production of higher number of exciton formation in the nanocomposirte samples.

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