Modification of Optophysical Properties of Poly[(9,9-Di-N-Octylfluorenyl-2,7-Diyl)-Alt-(Benzo[2,1,3]Thiadiazol-4,8-Diyl)] Thin Film via Additions of TiO2 Nanoparticles

2017 ◽  
Vol 888 ◽  
pp. 357-361
Author(s):  
Siti Aishah Ahmad Fuzi ◽  
Mohammad Hafizuddin Hj Jumali ◽  
Bandar Ali Al-Asbahi ◽  
Kuan Ying Kok ◽  
Nur Ubaidah Saidin
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Emission Spectrum ◽  
Polymer Matrix ◽  
Energy Band ◽  
Intermediate Energy ◽  
Absorption Properties ◽  
Glass Substrates ◽  
Solution Blending ◽  
Vis Spectroscopy

The solution of poly [(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo [2,1,3] thiadiazol-4,8-diyl)] (F8BT) F8BT/TiO2 nanocomposites were prepared using solution blending methods. The TiO2 contents were fixed between 0 wt% - 35 wt%. Then, the solutions were spin coated at 1000 rpm for 30 s onto glass substrates to form thin film samples. The optical properties of the nanocomposites were determined using UV-Vis spectroscopy and photoluminescence spectroscopy. The absorption properties of the thin film increased due to existence of intermediate energy band which lead to higher space charge regions for electron insertion. Besides that, the λmax for absorption and emission spectrum were systematically shifted due to incorporation of TiO2 NPs indicating an interaction between nanoparticles and polymer matrix. Furthermore, the intensity of the emission spectrum were enhanced in the presence of TiO2 NPs. This is due to the existence of TiO2 NPs which trapped more electrons at the interface F8BT/TiO2, resulted production of higher number of exciton formation in the nanocomposirte samples.

Enhancement of optical properties of poly (9,9′-di-n-octylfluorenyl-2,7-diyl) in conjugated polymer/TiO2 nanocomposites

2014 ◽  
Vol 92 (9) ◽  
pp. 1021-1025 ◽  
Author(s):  
Bandar Ali Al-Asbahi ◽  
Mohammad Hafizuddin Haji Jumali
Keyword(s):  
Optical Properties ◽  
Conjugated Polymer ◽  
Emission Spectra ◽  
Treatment Temperature ◽  
Nanocomposite Films ◽  
Glass Substrates ◽  
Solution Blending ◽  
Heat Treated ◽  
Blending Method ◽  
Splitting Energy

The influence of colloidal TiO2 nanoparticle contents on the optical properties of poly (9,9′-di-n-octylfluorenyl-2,7-diyl) conjugated polymer (PFO) has been investigated. The solution blending method was used to prepare homogenous PFO/TiO2 nanocomposite. The nanocomposite films were prepared on glass substrates using the spin-coating technique. The films were divided into two groups, the first was left to dry at room temperature while the second was heat-treated at 120 °C for 1 h. Absorption and emission spectra showed that the PFO existed in α- and β-phases morphology having monomeric, excimeric, and double excimeric states. In addition, both spectra revealed that TiO2 contents and heat treatment temperature extended the conjugation length of PFO. Finally, emission spectra for both cases exhibited decreasing in the line width of zero-phonon emission spectra and increasing in the vibronic splitting energy, upon increment of the TiO2, led to a significant increase in π-electron delocalization and lower degree in chain disorder.

scholarly journals Growth of ZnS:Ag:Cu Thin Film Deposited on Glass Substrates using Thermal Evaporation Technique for Alpha-photovoltaic

2020 ◽  
Vol 21 (1) ◽  
pp. 8
Author(s):  
Emy Mulyani ◽  
Tjipto Sujitno ◽  
Dessy Purbandari ◽  
Ferdiansjah Ferdiansjah ◽  
Sayono Sayono
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Glass Substrate ◽  
Thermal Evaporation ◽  
Energy Gap ◽  
Thermal Evaporation Technique ◽  
Optimal Thickness ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Deposition Depth

This paper presents the research on the growth of ZnS:Ag:Cu thin film on a glass substrate as a radio-luminescent material. The SRIM/TRIM software is used to determine the optimum thickness based on an energy deposition depth of 5.485 MeV Am 241 alpha radiation source on ZnS:Ag:Cu material. To increase the adhesive strength of the coating, initially, the glass substrate is etched using a plasma glow discharged at 280°C for 15 minutes. Multiple coatings of ZnS:Ag:Cu were  etched on the glass substrate; this was carried out using a thermal evaporation technique to achieve the optimal thickness (based on SRIM/TRIM simulation). The thin film thickness was observed using a scanning electron microscope (SEM). The optical properties of the un-etched, etched glass substrate and thin-film were characterized using UV-Vis spectrometer. Based on SRIM/TRIM simulation, the optimal thickness is 22 mm which can be achieved by coating three times. From optical properties of ZnS:Ag:Cu thin film and after being analysed using Taue plot method, it is found that the energy gap of ZnS:Ag:Cu thin film is 2.48 eV. It can be concluded that the addition of Ag and Cu doped decrease the energy gap of ZnS (3.66 eV).

Optical Properties of Thin Films of Haycockite

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2023-2033
Author(s):  
Barys Korzun ◽  
Marin Rusu ◽  
Thomas Dittrich ◽  
Anatoly Galyas ◽  
Andrey Gavrilenko
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Composition ◽  
Energy Band ◽  
Surface Photovoltage ◽  
Second Phase ◽  
Energy Band Gap ◽  
Flash Evaporation ◽  
Glass Substrates ◽  
Evaporation Technique

ABSTRACTThin films of haycockite Cu4Fe5S8 on glass substrates were deposited by flash evaporation technique from powders of this compound. The composition of thin films correspond to the atomic content of Cu, Fe, and S of 24.13, 27.90, and 47.97 at.% with the Cu/ Fe and S/ (Cu + Fe) atomic ratios of 0.87 and 0.92 respectively, whereas the corresponding theoretical values for this material amount to 0.80 and 0.89. The as-prepared thin films of haycockite consist of a set of separate fractions of approximately identical areas of about 400 - 600 μm2. It can be assumed that this structure evolved during cooling down of thin films since it completely covers the surface of thin films. A small inclusion of a second phase with the chemical composition close to talnakhite Cu9Fe8S16 is also observed. Haycockite Cu4Fe5S8 is found to be a direct gap semiconductor with the energy band gap Eg equal to 1.26 eV as determined using both transmission and surface photovoltage methods.

Properties of CuInS2 Thin Films Fabricated by SEL Method

Solar Energy ◽  
2005 ◽  
Author(s):  
Gye-Choon Park ◽  
Woon-Jo Jeong ◽  
Hyeon-Hun Yang ◽  
Hae-Duck Jung ◽  
Jin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Constant ◽  
Energy Band ◽  
Optical Energy ◽  
Glass Substrates ◽  
Cuins2 Thin Films ◽  
Sulfur Atmosphere ◽  
P Type

CuInS2 thin films were fabricated by sulphurization of S/In/Cu Stacked elemental layers (SEL) on slide glass substrates by annealing in vacuum of 10−3 Torr at temperature of 50 °C ∼ 350 °C. Some S/In/Cu SEL were vacuum annealed under a sulfur atmosphere. The thin films thus annealed were analyzed by measuring structural, electrical and optical properties. When CuInS2 thin films were made under a sulfur atmosphere, lattice constant of a and grain size of the thin film were a little larger than those in only vacuum annealing. The largest lattice constant of a and grain size was 5.63 Å and 1.2 μm respectively. Also, when the thin films were made under a sulfur atmosphere, conduction types were all p-type with resistivities of around 10−1 Ωcm and optical energy band gaps of the films were a little larger than those in only vacuum and the largest optical energy band gap of CuInS2 thin film was 1.53 eV.

Enhanced Electrical Properties of AZO/IZO Multilayered Thin Film with Post Laser Annealing Process

2021 ◽  
Vol 21 (3) ◽  
pp. 1971-1977
Author(s):  
Jihye Kang ◽  
Dongsu Park ◽  
Donghun Lee ◽  
Masao Kamiko ◽  
Sung-Jin Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Multilayer Structure ◽  
Laser Annealing ◽  
Transparent Conducting Oxide ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Vis Spectroscopy ◽  
Doped Zno

In this research, alternative deposition process of ZnO-based thin films have been studied for transparent conducting oxide (TCO) application. To improve the electrical and optical properties of transparent oxide thin films, alternatively stacked Al-doped ZnO and In-doped ZnO thin films were investigated. Multilayer structure of alternative 6 layers of thin films were prepared in this research. Especially, Aluminum and Indium were chosen as dopant materials. Thin films of Al-doped ZnO (AZO) and In-doped ZnO (IZO) were alternatively deposited by spin coating with sol-gel method. After deposition of multilayered thin films, multi steps of furnace (F), rapid thermal annealing (R) and CO2 laser annealing (L) processes were carried out and investigated thin film properties by dependence of post-annealing sequence and thin film structures. The electrical and optical properties of thin films were investigated by 4-point probe and UV-vis spectroscopy and its shows the greatest sheet resistance value of 0.59 kΩ/sq. from AZO/IZO multilayered structure and upper 85% of transmittance. The structural property and surface morphology were measured by X-Ray Diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Al- and In-doped ZnO thin film shows the highest intensity value at (002) peak of AZO/IZO multilayer structure which was performed FRL process.

Study of some Physical Properties and the Effect of Gamma Irradiation on Optical Properties of Electrochromic Co3O4 Thin Film

2021 ◽  
Vol 1021 ◽  
pp. 107-114
Author(s):  
Buthainah A. Ibrahim ◽  
Ziad T. Khodiar ◽  
Marwan M. Farhan
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Gamma Irradiation ◽  
Cobalt Chloride ◽  
Optical Band Gap ◽  
Uv Spectroscopy ◽  
Oxide Thin Film ◽  
Chemical Spray Pyrolysis ◽  
Glass Substrates ◽  
Chemical Spray

Cobalt oxide thin film (Co3O4) has been prepared from cobalt chloride with distilled water on conducting glass substrates Fluorine doped Tin Oxide (FTO) at (400ºC) by depositing chemical spray pyrolysis, with thickness (200 nm). The structural properties are studied by XRD. Also, optical properties and electrical properties of Co3O4 thin film are studied by UV spectroscopy and Cyclic voltammetry (CV) respectively. The effects of gamma irradiation on optical properties are also examined. XRD results showed that the film was polycrystalline with cubic structure having preferred orientation (111). The as-prepared Co3O4 film exhibits a noticeable EC behaviour with reversible colour which changes from dark grey to pale yellow with bleaching time (55 s) and colouring time (40 s). After irradiation, the optical properties showed that as the transmittance decrease leads to decrease the direct optical band gap from (3.68eV) to (3.55eV)

Structural and Texture Studies of PbS Thin Film

2010 ◽  
Vol 442 ◽  
pp. 123-129 ◽  
Author(s):  
S.K. Mehmood ◽  
S. Zaman ◽  
K. Ahmed ◽  
M.M. Asim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Thermal Treatment ◽  
Hydrazine Hydrate ◽  
Structural Parameters ◽  
Glass Substrates ◽  
Deposition Parameters ◽  
Cubic Structure ◽  
Post Deposition

In this study, we report on the structural parameters and texture development which occurred during deposition and annealing of PbS films and their effect on optical properties. The films under study were deposited on glass substrates through chemical bath method. The reactive substances used to obtain the PbS layers were lead accetae trihydrated, thiourea and hydrazine hydrate. The films were prepared with one molar bath concentration and for various deposition times. The data showed that as-prepared and annealed thin films are polycrystalline with cubic structure and predominantly textured along 100. Results showed that thinner films are more prone to post deposition heat treatments as compared to thicker ones. Deposition parameters and thermal treatment strongly influence the optical properties of PbS films.

scholarly journals Surface Morphology and Electrical Properties of FTO (Fluorine Doped Tin Oxide) with Different Precursor Solution for Transparent Conducting Oxide

2015 ◽  
Vol 773-774 ◽  
pp. 682-685
Author(s):  
Muhammad Luqman Mohd Napi ◽  
Ng Kim Seng ◽  
Mohd Khairul Ahmad
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Tin Oxide ◽  
Film Surface ◽  
Oxide Thin Film ◽  
Chloride Dihydrate ◽  
Vis Spectroscopy ◽  
Chloride Pentahydrate

Fluorine doped tin oxide (FTO) thin film was prepared by using two different precursor solutions which are tin (ii) chloride dihydrate and tin (iv) chloride pentahydrate. These two precursors are used in spray pyrolysis process to prepare the fluorine doped tin oxide thin film. Surface Morphology of the thin film was characterized using field emission scanning electron microscope (FE-SEM). FESEM image shows the particle distribution and the morphology of fluorine doped tin oxide thin film. Two point probe I-V measurement and UV-Vis spectroscopy were used to study the electrical and optical properties of both films. Both precursors produced different particles distribution, electrical properties and also optical properties. The results show that the sheet resistance (Rs) of fluorine doped SnO2 is about 49.24×106Ω for tin (iv) chloride pentahydrate compared to 43.03×1012Ω for tin (ii) chloride dihydrate

Properties of TiO2 Thin Film Prepared by Sol-Gel Dip Coating

2015 ◽  
Vol 723 ◽  
pp. 528-531
Author(s):  
Jun Wang ◽  
Ling Yun Bai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Gel Method ◽  
Glass Substrates

TiO2 thin films were prepared on glass substrates by sol-gel method. The effect of withdraw speed on the thickness and optical properties of TiO2 thin films was investigated. The films were transparent in the visible wavelength. The thickness of the TiO2 films was increased from 90 nm for the withdraw speed of 1000 μm/s to 160 nm for the withdraw speed of 2000 μm/s. While, The refractive index of the TiO2 thin film decreased from 2.38 to 2.07. It may be due to the porosity of the film was increased. The optical band-gap of the films was around 3.45 eV.

Preparation and Characterization of Porous Silica Antireflective Thin Film on Glass Substrates by Chemical Etching

2013 ◽  
Vol 860-863 ◽  
pp. 903-906
Author(s):  
Ying Chao Zhang
Keyword(s):  
Thin Film ◽  
Chemical Etching ◽  
Porous Silica ◽  
Etching Time ◽  
Glass Substrates ◽  
Vis Spectroscopy ◽  
Wide Wavelength Range ◽  
Single Precursor ◽  
Uv Visible

In this paper, porous silica antireflective thin film with special nanostructure has been successfully established using glass-cover board as a single precursor through a novel chemical etching route. The process mainly involves selective leaching of active component on the surface of glass such as sodium oxide, calcium oxide. The effects of etching time, acid concentration and temperature on the porous silica antireflective thin film were demonstrated. Surface microstructure and optical properties of the porous silica antireflective thin film were characterized in detail by scanning electron microscopy (SEM), UV-visible (UV-Vis) spectroscopy. The results indicate the porous silica antireflective thin film were composed of granular with diameter less than 30nm, and the thickness of film was in the range of 80~100nm. Enhanced transparency (up to 94.6%) was achieved in a wide wavelength range.

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