Interfacial Reactions in Zn4Sb3/Titanium Diffusion Couples

2021 ◽  
pp. 160630
Author(s):  
Chun-Hao Chen ◽  
Wei-Ting Yeh ◽  
Tung-Han Chuang
Keyword(s):  
Interfacial Reactions ◽  
Diffusion Couples ◽  
Titanium Diffusion

scholarly journals Interfacial reactions between solid Ni and liquid Sn-Zn alloys

2015 ◽  
Vol 51 (2) ◽  
pp. 179-184 ◽  
Author(s):  
V. Gandova
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Interfacial Reactions ◽  
Diffusion Couples ◽  
Zn Diffusion ◽  
Ni Substrate ◽  
Industry Applications ◽  
Zn Alloys ◽  
Scanning Electron ◽  
Intermetallic Layers

The limitation of the harmful lead-containing solders used in the electronics and other industry applications change lead with another metals. Interfacial reactions between Sn-Zn alloys and Ni substrate after annealing at 400 and 450?C were studied. Three intermetallic compounds Ni3Sn4, T1, ?-Ni5Zn21 and liquid Sn were observed in the Ni/Sn-Zn diffusion couples. Scanning electron microscope was used for the investigation of the microstructure. The microhardness measurement of the intermetallic layers was also performed.

scholarly journals Interfacial Reactions between Mg-40Al and Mg-30Y Master Alloys

Metals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 825 ◽  
Author(s):  
Jiahong Dai ◽  
Bin Jiang ◽  
Hongmei Xie ◽  
Qingshan Yang
Keyword(s):  
Diffusion Couple ◽  
Reaction Layer ◽  
Intermetallic Phase ◽  
Diffusion Path ◽  
Interfacial Reactions ◽  
Diffusion Activation Energy ◽  
Temperature Phase ◽  
Diffusion Couples ◽  
Master Alloys ◽  
Growth Constants

Interfacial reactions between Mg-40Al and Mg-30Y master alloys were investigated at intervals of 25 °C in the 350–400 °C by using a diffusion couple method. Noticeable reaction layers were formed at the interfaces of the diffusion couples. The concentration profiles of the reaction layers were characterized. The diffusion path of the diffusion couple at 400 °C is constructed on the Mg-Al-Y ternary isothermal temperature phase diagram. The phases of the reaction layer were characterized by X-ray diffraction. The interfacial reaction thermodynamics of diffusion couples were studied. These results indicate that Al2Y is the only new formed intermetallic phase in the reaction layers. The growth constants of the reaction layers were calculated. In the reaction layer II, the integrated interdiffusion coefficients of Al are higher than Y, the diffusion activation energy of Y is higher than that of Al.

Interfacial reactions in Ti/Si3N4and TiN/Si diffusion couples

1995 ◽  
Vol 77 (9) ◽  
pp. 4412-4416 ◽  
Author(s):  
M. Paulasto ◽  
J. K. Kivilahti ◽  
F. J. J. van Loo
Keyword(s):  
Interfacial Reactions ◽  
Diffusion Couples

Interfacial Reactions Between Ni and GaAs

1987 ◽  
Vol 102 ◽  
Author(s):  
J. C. Lin ◽  
X. -Y. Zheng ◽  
K. -C. Hsieh ◽  
Y. A. Chang
Keyword(s):  
Thin Film ◽  
Phase Diagram ◽  
Epitaxial Growth ◽  
Ternary Phase ◽  
Bulk Diffusion ◽  
Interfacial Reactions ◽  
Diffusion Couples ◽  
Phase Diagram Determination

ABSTRACTInterfacial reactions between Ni and GaAs have been studied using bulk diffusion couples of Ni(∼0.5mm thick)/GaAs and thin-film Ni (∼40nm) on GaAs (100) in addition to phase diagram determination at 600° C. On the basis of the phase diagram and the bulk diffusion couples, the ternary phase which forms first in the thin-film couples is Ni3 GaAs. Thinfilm studies show that the epitaxial growth of equilibrium contact phases, i.e., NiAs and β-GaNi, on a GaAs (100) substrate is possible.

Interfacial Reactions in Thin Film and Bulk Iron/Silicon Couples

1997 ◽  
Vol 472 ◽  
Author(s):  
Yuhong Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Thin Film ◽  
Initial Phase ◽  
Bulk Diffusion ◽  
Electron Beam Evaporation ◽  
Interfacial Reactions ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Formation Behavior ◽  
Scanning Electron ◽  
Oriented Single Crystal

ABSTRACTInitial phase formation in thin film and bulk Fe/Si couples has been investigated using transmission and scanning electron microscopy (TEM and SEM). For the thin film couples, ≈165 nm of Fe was deposited by electron beam evaporation onto <111> oriented Si substrates. SiO2 capping layers (≈100nm thick) were used to protect the Fe from oxidation during subsequent annealing. Bulk diffusion couples were fabricated by clamping together polycrystalline Fe pieces and <111> oriented single crystal Si pieces and sealed in evacuated (≈10-4 torr) quartz capsules. Annealing of thin film couples was done at temperatures ranging from 300°C to 500°C for up to several hours. Bulk couples were annealed at 700°C for up to ≈1000hrs.Interfacial reactions were detected in as deposited thin film couples. A layer =5nm thick was identified, through electron diffraction, as poorly crystalline off-stoichiometric Fe3Si. Iron was the major diffuser during the formation of Fe3Si. During annnealing off-stoichiometric Fe3Si transformed to stoichiometric Fe3Si. FeSi was the next phase to form - initially detected after annealing at 300°C for 3 hrs. Similar results were obtained for bulk couples. The first phase to form was ordered stoichiometric Fe3Si (initially detected after 7 hrs), followed by FeSi (≈23 hrs) and then FeSi2 (>200 hrs). The formation behavior of these phase is discussed.

Prediction of formation of intermetallic compounds in diffusion couples

2007 ◽  
Vol 22 (6) ◽  
pp. 1502-1511 ◽  
Author(s):  
Huashan Liu ◽  
Hang Wang ◽  
Wenjun Zhu ◽  
Xiaoma Tao ◽  
Zhanpeng Jin
Keyword(s):  
Intermetallic Compounds ◽  
Phase Formation ◽  
Mechanical Performance ◽  
Nucleation And Growth ◽  
Interfacial Reactions ◽  
Diffusion Couples ◽  
New Model ◽  
Different Temperatures ◽  
Good Agreement

Formation of intermetallic compounds (IMCs) at the interface between two metals during soldering processing exerts much influence on the electrical and mechanical performance of integrate circuits (ICs). Considering both of the thermodynamic and kinetic factors (including nucleation and growth) on phase formation, a new model capable of predicting phase formation sequence at the interface between two metals with different structures has been proposed in this work. Application of this new model on the interfacial reactions between pure elemental pairs of metals such as Ni/Sn, Cu/In, Cu/Sn, and Co/Sn at different temperatures shows good agreement between predictions by this model and experimental observations.

Interfacial Reactions Between Co and GaAs

1988 ◽  
Vol 119 ◽  
Author(s):  
F.-Y. Shiau ◽  
Y. Zuo ◽  
X.-Y. Zheng ◽  
J.-C. Lin ◽  
Y. A. Chang
Keyword(s):  
Thin Film ◽  
Phase Diagram ◽  
Bulk Diffusion ◽  
Interfacial Reactions ◽  
Diffusion Couples ◽  
Diffusion Data

AbstractInterfacial reactions between Co and GaAs have been studied using bulk diffusion couples of Co (∼0.5 mm thick)/GaAs and thin-film Co(∼-40 nm) on (001)GaAs as well as the epitaxial formation of CoAs and CoGa on (001)GaAs. In addition, phase diagram of Co-Ga-As at 600°C was determined. The thin-film results are rationalized in terms of the phase diagram and bulk diffusion data.

Interfacial Reactions of Ti-24Al-11Nb Alloy with Al2O3

1993 ◽  
Vol 318 ◽  
Author(s):  
Weimin Si ◽  
Pengxing Li ◽  
Renjie Wu
Keyword(s):  
Interfacial Reactions ◽  
Diffusion Couples ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
Interfacial Layers ◽  
Free Zone ◽  
Β Phase ◽  
Transmission Electron ◽  
Diffusion Controlled ◽  
Reaction Zones

ABSTRACTThe interfacial reactions and interdiffusion between Al2O3 and Ti-24Al-11Nb (at%) alloy have been investigated. Diffusion couples were fabricated by thermal sprayed Al2O3 film onto Ti-24Al-11Nb substrate, and then annealed at 1200°C. Interfacial layers were characterized using electron probe microanalysis (EPMA), X-ray diffraction (XRD), and transmission electron microscopy (TEM). The layered structure of interface region was observed which showed the diffusion controlled characteristics. In the reaction zones, the reaction products consisted mainly of TiO, TiO2, and Al2TiO5. Adjacent to the reaction zones, there existed β phase free zone and β phase lacking zone. The β phase free zone resulted from Nb depletion of this region. The reaction mechanism has been discussed using thermodynamic approach.

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