Intense and fast UV emitting ZnO microrods fabricated by low temperature aqueous chemical growth method

Zinc oxide (ZnO) nanostructures with different kind of morphologies were synthesized on glass substrates via the hydrothermal aqueous chemical growth method utilizing c-axis oriented ZnO thin film as seeded catalyst. By preparing ZnO thin film at different molar concentrations between 0.2~1.0 M, oval shaped ZnO nanostructures mixed with ZnO nanowires and rod shaped ZnO nanostructures mixed with ZnO nanowires were produced after immersion process into 0.0002 M zinc nitrate solution for 24 hour. The XRD spectra show synthesized ZnO nanostructures were ZnO hexagonal wurtzite crystalline. The photoluminescence (PL) measurement indicates the luminescences of the samples were depending on the shapes of ZnO nanostructure.

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Self-organized Zn/ZnO core-shelled hierarchical structures prepared by aqueous chemical growth

Journal of Materials Research ◽

10.1557/jmr.2008.0146 ◽

2008 ◽

Vol 23 (4) ◽

pp. 1163-1167 ◽

Cited By ~ 10

Author(s):

C.Y. Kuan ◽

J.M. Chou ◽

I.C. Leu ◽

M.H. Hon

Keyword(s):

Field Emission ◽

Hierarchical Structures ◽

The Self ◽

Emission Characteristics ◽

Metallic Core ◽

Self Organized ◽

Aqueous Chemical Growth ◽

Growth Method ◽

Self Assembled ◽

Foil Substrate

Self-assembled core-shelled hierarchical structures consisting of single-crystalline pyramid Zn microtip as a core, converted ZnO coating as the shell, and the grown ZnO nanowires as branches, have been prepared. Such ZnO hierarchical structures fabricated by a simple aqueous chemical growth method on Zn foil substrate are expected to be easily integrated into nanodevices. These self-organized structures are superior to both the random nanoarchitecture arrays formed in vapor system and the precipitated nanostructures suspended in the solution. Because of the easier transportation of electrons from the metallic core to ZnO branches, the self-assembled core-shelled hierarchical structures exhibit better field-emission characteristics.

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Growth and Characterizations of Mg-doped GaAs Films

10.1149/osf.io/q5ksp ◽

2020 ◽

Author(s):

Dong Fong

Keyword(s):

Atomic Force Microscopy ◽

Low Temperature ◽

Surface Morphology ◽

Force Microscopy ◽

Atomic Force ◽

Gaas Films ◽

Growth Method ◽

P Type ◽

Low Temperature Photoluminescence ◽

Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

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Properties of Nanostructured Zinc Oxide by Hydro-Thermal Aqueous Chemical Growth Method

10.1063/1.3160212 ◽

2009 ◽

Author(s):

M. H. Mamat ◽

M. Z. Sahdan ◽

S. Amizam ◽

H. A. Rafaie ◽

Z. Khusaimi ◽

...

Keyword(s):

Zinc Oxide ◽

Nanostructured Zinc Oxide ◽

Aqueous Chemical Growth ◽

Growth Method

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Properties of nanostructured ZnO thin films synthesized using a modified aqueous chemical growth method

Materials Research Express ◽

10.1088/2053-1591/aadcd6 ◽

2019 ◽

Vol 6 (5) ◽

pp. 056406 ◽

Cited By ~ 2

Author(s):

Oliver O Apeh ◽

Ugochi K Chime ◽

Solomon Agbo ◽

Sabastine Ezugwu ◽

Raymond Taziwa ◽

...

Keyword(s):

Thin Films ◽

Zno Thin Films ◽

Aqueous Chemical Growth ◽

Growth Method

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4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.925 ◽

2010 ◽

Vol 645-648 ◽

pp. 925-928 ◽

Cited By ~ 1

Author(s):

Bharat Krishnan ◽

Joseph Neil Merrett ◽

Galyna Melnychuk ◽

Yaroslav Koshka

Keyword(s):

Low Temperature ◽

Epitaxial Growth ◽

Surface Passivation ◽

Drift Region ◽

Pin Diodes ◽

Growth Technique ◽

Growth Method ◽

Heavily Doped ◽

P Type

In this work, the benefits of the low-temperature halo-carbon epitaxial growth at 1300oC to form anodes of 4H-SiC PiN diodes were investigated. Regular-temperature epitaxial growth was used to form an 8.6 μm-thick n-type drift region with net donor concentration of 6.45x1015 cm-3. Trimethylaluminum doping, in situ during blanket low-temperature halo-carbon epitaxial growth, was used to form heavily doped p-type layers. Forward I-V characteristics measured from diodes having different anode areas indicated that the new epitaxial growth technique provides anodes with low values of the series resistance, even without contact annealing. At room temperature, a 100 μm-diameter diode had a forward voltage of 3.75 V at 1000A/cm² before annealing and 3.23 V after annealing for 2 min at 750°C. The reverse breakdown voltage was more than 680 V (on average) in the devices without edge termination or surface passivation.

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