Rapid fabrication of a large-area 3D silica colloidal crystal thin film by a room temperature floating self-assembly method

2009 ◽  
Vol 63 (18-19) ◽  
pp. 1586-1589 ◽  
Author(s):  
Aijun Wang ◽  
Sheng-Li Chen ◽  
Peng Dong
2003 ◽  
Vol 775 ◽  
Author(s):  
Jeffrey Anderson ◽  
Rubi Garcia ◽  
Weilie L. Zhou

AbstractSubmicron KMnF3 cubic and spherical nanoparticles were synthesized using the reverse micelle method. The nanostructures of the nanocrystals were studied by field emission electron microscopy and transmission electron microscopy. KMnF3 nanocrystals synthesized at room temperature started with cubic submicron particles (∼100 nm) and consisted of KMnF3 nanocrystallites (10-15 nm). As the reaction continued, the nanocrystals fused together and transformed into perfect cubic nanocrystals. Spherical beads composed of KMnF3 nanocrystallites were observed at low temperature synthesis. As the reaction continued, the spherical particles grew larger, however, no characteristic cubic shape of KMnF3 nanoparticles were observed. Even as they grew larger, there was no evidence of homogeneous crystal morphology as seen in the room temperature samples. Cubic shape KMnF3 nanocrystals were self-assembled into large area self-assembling patterns.


2017 ◽  
Vol 5 (31) ◽  
pp. 7746-7752 ◽  
Author(s):  
Xueliang Ye ◽  
Zhen Yuan ◽  
Huiling Tai ◽  
Weizhi Li ◽  
Xiaosong Du ◽  
...  

A novel strain sensor based on reduced graphene oxide with ultra-sensitive and ultra-durable performance was fabricated by the chemical layer-by-layer self-assembly method.


2006 ◽  
Vol 921 ◽  
Author(s):  
Shawn S Coffee ◽  
Wyatt A Winkenwerder ◽  
Scott K Stanley ◽  
Shahrjerdi Davood ◽  
Sanjay K Banerjee ◽  
...  

AbstractGermanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ~20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO2 pore walls.


Sign in / Sign up

Export Citation Format

Share Document