Two-dimensional dopant profiling in semiconductor devices by electron holography and chemical etching delineation techniques with the same specimen

2008 ◽  
Vol 48 (10) ◽  
pp. 1734-1736 ◽  
Author(s):  
Ulugbek Shaislamov ◽  
Jun-Mo Yang ◽  
Jung Ho Yoo ◽  
Hyun-Sang Seo ◽  
Kyung-Jin Park ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Semiconductor Devices ◽  
Electron Holography ◽  
Two Dimensional ◽  
Dopant Profiling

Semiconductor Dopant Profiling by Off-Axis Electron Holography

2001 ◽  
Vol 7 (S2) ◽  
pp. 572-573
Author(s):  
Jing Li ◽  
M.R. McCartney ◽  
David J. Smith
Keyword(s):  
Potential Distribution ◽  
Quantitative Measurement ◽  
Semiconductor Industry ◽  
Deep Submicron ◽  
Test Structure ◽  
Electron Holography ◽  
Two Dimensional ◽  
Dopant Profiling ◽  
Preparation Conditions ◽  
Voltage Contrast

Two-dimensional dopant profiling continues to be a topic of great interest and importance to the semiconductor industry. Off-axis electron holography provides access to the phase of the electron wavefront that has traversed a sample, and it thus enables voltage contrast to be visualized. The technique was used by McCartney et al. (1994) to observe the potential distribution across Si/Si p-n junctions [1], and it was later also used by Rau et al. (1999) to map the two-dimensional electrostatic potential in deep-submicron transistor structures [2]. in this paper, we have used electron holography and a known test structure to demonstrate that accurate voltage profiles can be extracted under carefully controlled sample preparation conditions. Carrier information can be obtained using a simulation program. Experimental factors that affect quantitative measurement are also discussed.The sample studied was a test structure fabricated at IBM for comparison of various profiling methods [3]. Both p-n junctions and p-p+ regions were available for study.

A Novel Junction Profiling Methodology

2010 ◽  
Author(s):  
Tomokazu Nakai
Keyword(s):  
Failure Analysis ◽  
Profile Analysis ◽  
Semiconductor Devices ◽  
Wet Etching ◽  
Two Dimensional ◽  
Electrical Characteristics ◽  
Conventional Methods

Abstract Currently many methods are available to obtain a junction profile of semiconductor devices, but the conventional methods have drawbacks, and they could be obstacles for junction profile analysis. This paper introduces an anodic wet etching-based two-dimensional junction profiling method, which is practical, efficient, and reliable for failure analysis and electrical characteristics evaluation.

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

An Ultra-High-Tilt Two-Contact Electrical Biasing Specimen Holder for Electron Holography and Electron Tomography of Semiconductor Devices

2004 ◽  
Vol 10 (S02) ◽  
pp. 1012-1013 ◽  
Author(s):  
Rafal E Dunin-Borkowski ◽  
Alison C Twitchett ◽  
Jonathan S Barnard ◽  
Ronald F Broom ◽  
Paul A Midgley ◽  
...  
Keyword(s):  
Electron Tomography ◽  
Semiconductor Devices ◽  
Electron Holography ◽  
Specimen Holder

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

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