Charge Storage and Variable Temperature Data Retention Characteristics of Nitrided Titanium Oxide Nonvolatile Memory Device

2016 ◽  
Vol 37 (3) ◽  
pp. 276-279 ◽  
Author(s):  
Po-Hsien Ke ◽  
Jeng-Ting Li ◽  
Guan-Ting Hou ◽  
Jen-Sue Chen
Keyword(s):  
Titanium Oxide ◽  
Nonvolatile Memory ◽  
Variable Temperature ◽  
Memory Device ◽  
Temperature Data ◽  
Charge Storage ◽  
Data Retention ◽  
Nonvolatile Memory Device ◽  
Retention Characteristics ◽  
Nitrided Titanium

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

2012 ◽  
Vol 52 (8) ◽  
pp. 1627-1631 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Chih-Ting Lin ◽  
Chi-Hsien Huang ◽  
Chao-Sung Lai ◽  
Chin-Hsiang Liao
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Charge Storage ◽  
Data Retention ◽  
Retention Characteristics

Performance enhancement of TiSi2 coated Si nanocrystal memory device

2009 ◽  
Vol 1160 ◽  
Author(s):  
Huimei Zhou ◽  
Jianlin Liu
Keyword(s):  
Nonvolatile Memory ◽  
Storage Capacity ◽  
Performance Enhancement ◽  
Memory Device ◽  
Charge Storage ◽  
Si Nanocrystal ◽  
Device Applications ◽  
Retention Characteristics ◽  
Cmos Compatible ◽  
Nanocrystal Memory

AbstractSelf-aligned TiSi2 coated Si nanocrystal nonvolatile memory is fabricated. This kind of MOSFET memory device is not only thermally stable, but also shows better performance in charge storage capacity, writing, erasing speed and retention characteristics. This indicates that CMOS compatible silicidation process to fabricate TiSi2 coated Si nanocrystal memory is promising in memory device applications.

Self-aligned TiSi2/Si Hetero-nanocrystal Nonvolatile Memory

2007 ◽  
Vol 997 ◽  
Author(s):  
Yan Zhu ◽  
Bei Li ◽  
Jianlin Liu
Keyword(s):  
Retention Time ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Charge Storage ◽  
Si Nanocrystals ◽  
Nonvolatile Memory Device ◽  
Si Nanocrystal ◽  
Nanocrystal Memory

AbstractThis work describes a novel nonvolatile memory device with self-aligned TiSi2/Si hetero-nanocrystal charge storage nodes. The TiSi2/Si hetero-nanocrystals can be readily fabricated using industrial standard self-aligned silicidation technique based on Si nanocrystals deposited on ultra-thin tunnel oxide with LPCVD. As compared with a Si nanocrystal memory device, a TiSi2/Si hetero-nanocrystal memory device exhibits faster programming and erasing, and longer retention time.

Flexible Nanoporous WO3–x Nonvolatile Memory Device

ACS Nano ◽  
2016 ◽  
Vol 10 (8) ◽  
pp. 7598-7603 ◽  
Author(s):  
Yongsung Ji ◽  
Yang Yang ◽  
Seoung-Ki Lee ◽  
Gedeng Ruan ◽  
Tae-Wook Kim ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device

Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

2008 ◽  
Vol 29 (3) ◽  
pp. 265-268 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Chu-Yung Liu ◽  
Tien-Ko Wang ◽  
P. J. Tzeng ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Al Doping ◽  
Nonvolatile Memory Device
Sign in / Sign up

Export Citation Format

Share Document