Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs

2014 ◽  
Vol 54 (6-7) ◽  
pp. 1137-1142 ◽  
Author(s):  
Sudhansu Kumar Pati ◽  
Kalyan Koley ◽  
Arka Dutta ◽  
N. Mohankumar ◽  
Chandan K. Sarkar
Keyword(s):  
Oxide Thickness ◽  
Thickness Variation ◽  
Rf Performance

Analytical modeling of oxide thickness variation of metals under high temperature solid-particle erosion

2014 ◽  
Vol 05 (03) ◽  
pp. 1450002
Author(s):  
Ju Chen ◽  
Kuiying Chen ◽  
Rong Liu ◽  
Ming Liang
Keyword(s):  
High Temperature ◽  
Oxide Scale ◽  
Solid Particle ◽  
High Temperatures ◽  
Oxide Thickness ◽  
Alloy Surface ◽  
Thickness Variation ◽  
Solid Particle Erosion ◽  
Al Alloy ◽  
Particle Erosion

The paper presents a study of model development for predicting the oxide thickness on metals under high temperature solid-particle erosion. The model is created based on the theory of solid-particle erosion that characterizes the erosion damage as deformation wear and cutting wear, incorporating the effect of the oxide scale on the eroded surface under high temperature erosion. Then the instantaneous oxide thickness is the result of the synergetic effect of erosion and oxidation. The developed model is applied on a Ni -based Al -containing ( Ni – Al ) alloy to investigate the oxide thickness variation with erosion duration of the alloy at high temperatures. The results show that the thickness of the oxide scale on the alloy surface increases with the exposure time and temperature when the surface is not attacked by particles. However, when particles impact on the alloy surface, the oxide thickness is reduced, although oxidation is continuing. This indicates that oxidation does not benefit the erosion resistance of this alloy at high temperatures due to the low growth rate of the oxide.

Influence of tunnel oxide thickness variation on the programmed window of FLOTOX EEPROM cells

1992 ◽  
Vol 35 (8) ◽  
pp. 1195-1196 ◽  
Author(s):  
C. Papadas ◽  
G. Ghibaudo ◽  
G. Pananakakis ◽  
G. Gounelle ◽  
P. Mortini ◽  
...  
Keyword(s):  
Oxide Thickness ◽  
Thickness Variation

DG-FINFET-BASED SRAM CONFIGURATIONS FOR INCREASED SEU IMMUNITY

2012 ◽  
Vol 21 (04) ◽  
pp. 1250032 ◽  
Author(s):  
S. S. RATHOD ◽  
A. K. SAXENA ◽  
S. DASGUPTA
Keyword(s):  
Performance Metrics ◽  
Random Access ◽  
Oxide Thickness ◽  
Normal Operation ◽  
Thickness Variation ◽  
Back Gate ◽  
Single Event Upsets ◽  
Noise Margin ◽  
Sram Cell ◽  
Power Delay Product

In this paper, we propose a new circuit level hardening techniques that can decrease the sensitivity of Static Random Access Memory (SRAM) cells to radiation induced Single Event Upsets (SEUs). Five different types of 32 nm double gate (DG)-FinFET-based SRAM cells are analyzed. Proposed SRAM cell outperforms over the unhardened SRAM when exposed to radiation. This is primarily due to the modification of the source potential used to reduce the effect of SEU without affecting normal operation. Static Noise Margin (SNM), Read Noise Margin (RNM), Write Noise Margin (WNM) and Power Delay Product (PDP) are the performance metrics computed for each type of SRAM cell. Effect of back gate voltage and back gate oxide thickness variation on device characteristic show detrimental effects on radiation hardened capabilities of a device. Benchmarking is done against DICE latch and it is found that as compared to DICE latch proposed DG-FinFET SRAM has low transistor count, less area, low recovery time and fault tolerance to internal as well as external nodes.

Thin Film Reflectance Model for Trap Detector

2021 ◽  
Author(s):  
Brian H.T. Lee ◽  
◽  
Brenda H.S. Lam ◽  
C.M. Tsui
Keyword(s):  
Thin Film ◽  
Spectral Reflectance ◽  
Internal Quantum Efficiency ◽  
Oxide Thickness ◽  
Thickness Variation ◽  
Spectral Responsivity ◽  
Silicon Photodiode ◽  
Measurement Models ◽  
Trap Detector ◽  
Reflectance Model

The physical model of the spectral responsivity of trap detector consists of multiple parameters such as the internal quantum efficiency and the spectral reflectance. In some measurement models, the spectral reflectance of the trap detector is approximated by fitting a wavelength dependence equation which does not consider the effect of the oxide thickness of the silicon photodiode. To analyse the uncertainty due to the oxide thickness variation, a thin film reflectance model is set up in the Standards and Calibration Laboratory (SCL) for the evaluation of the spectral reflectance of the trap detectors. The model is based on the Fresnel coefficients of a 3-layer thin film structure which consists of air and a thin film oxide layer on a silicon substrate. The reflectance model was implemented as user-defined functions to calculate the spectral reflectance at different oxide thickness. It was also integrated with the SCL’s MCM program to evaluate the uncertainty of the spectral responsivity of trap detectors.

IMPACT OF FRONT AND BACK OXIDE THICKNESS VARIATION ON PERFORMANCE OF MODIFIED SOURCE FD SOI MOSFET

2016 ◽  
Vol 5 (2) ◽  
pp. 13 ◽  
Author(s):  
SRIVASTAVA NILESH ANAND ◽  
Mishra VIMAL KUMAR ◽  
CHAUHAN R.K ◽  
◽  
◽  
...  
Keyword(s):  
Oxide Thickness ◽  
Thickness Variation ◽  
Soi Mosfet

Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs

2016 ◽  
Vol 61 ◽  
pp. 24-29 ◽  
Author(s):  
Sanjit Kumar Swain ◽  
Arka Dutta ◽  
Sarosij Adak ◽  
Sudhansu Kumar Pati ◽  
Chandan Kumar Sarkar
Keyword(s):  
Oxide Thickness ◽  
Channel Length ◽  
Gate Stack ◽  
High K ◽  
Rf Performance
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