scholarly journals A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases

2014 ◽  
Vol 54 (11) ◽  
pp. 2396-2400 ◽  
Author(s):  
L.X. Qian ◽  
P.T. Lai
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Electrical Characteristics ◽  
Different Gases

Electrical Characteristics of Low-Temperature Poly-Silicon Thin-Film Transistor Using a Stacked Pr2O3/SiOxNy Gate Dielectric

2019 ◽  
Vol 13 (1) ◽  
pp. 151-155
Author(s):  
Tung-Ming Pan ◽  
Tin-Wei Wu ◽  
Ching-Lin Chan ◽  
Kai-Ming Chen ◽  
Chih-Hong Lee
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Electrical Characteristics ◽  
Silicon Thin Film ◽  
Poly Silicon

scholarly journals USING PERCOLATIVE CRYSTALLINE 0.3 CUO/PVDF NANOCOMPOSITE GATE DIELECTRIC FOR FABRICATING HIGH-EFFECT MOBILITY THIN FILM TRANSISTOR OPERATING AT LOW VOLTAGE

2021 ◽  
Vol 9 (11) ◽  
pp. 1095-1101
Author(s):  
Debabrata Bhadra ◽  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Thin Film Transistor ◽  
Dielectric Constants ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Capacitance Density

Thin-film transistor (TFT) with various layers of crystalline Poly-vinylidene fluoride (PVDF)/CuO percolative nanocomposites based on Anthracene as a gate dielectric insulator have been fabricated. A device with excellent electrical characteristics at low operating voltages (<1V) has been designed. Different layers (L) of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constants (εr). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films have been investigated. This device was showed highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of -1.6V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such a High-ε three layered (3L) PVDF/CuO gate dielectric appears to be highly promising candidates for organic non-volatile memory, sensor and field-effect transistors (FETs).

Effect of UV/ozone treatment on hysteresis of pentacene thin-film transistor with polymer gate dielectric

2009 ◽  
Vol 53 (6) ◽  
pp. 621-625 ◽  
Author(s):  
Jae Bon Koo ◽  
Seong Yeol Kang ◽  
In Kyu You ◽  
Kyung Soo Suh
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Ozone Treatment ◽  
Uv Ozone
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