Potentiality of trap charge effects and SiON induced interface defects in a-Si3N4/SiON based MIS structure for resistive NVM device
2015 ◽
Vol 55
(5)
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pp. 789-794
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2021 ◽
Vol 21
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pp. 4252-4257
2016 ◽
Vol 63
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pp. 1478-1485
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1972 ◽
Vol 30
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pp. 448-449
2008 ◽
Vol 99
(1)
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pp. 24-25
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2008 ◽
Vol 15
(4)
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pp. 681-693
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