Gate-oxide-short defect analysis and fault modeling in FinFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2021.114464 ◽

2022 ◽

Vol 129 ◽

pp. 114464

Author(s):

Roya Dibaj ◽

Dhamin Al-Khalili ◽

Maitham Shams ◽

Saman Adham

Keyword(s):

Fault Modeling ◽

Defect Analysis ◽

Gate Oxide Short

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Gate-Oxide-Short Defect Analysis and Fault Modeling Based on FinFET's 3D Structure

10.22215/etd/2019-13417 ◽

2019 ◽

Author(s):

Roya Dibaj

Keyword(s):

3D Structure ◽

Fault Modeling ◽

Defect Analysis ◽

Gate Oxide Short

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The effects of gate oxide short in 6-transistors SRAM cell

2004 IEEE International Conference on Semiconductor Electronics ◽

10.1109/smelec.2004.1620852 ◽

2004 ◽

Author(s):

Abu Khari bin A'Ain ◽

Kian Sin Sim ◽

Cheow Kwee Siong

Keyword(s):

Sram Cell ◽

Gate Oxide Short

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Test generation for gate oxide short in CMOS ICs

10.1109/secon.1990.117983 ◽

2002 ◽

Author(s):

S.I. Syed ◽

D.M. Wu

Keyword(s):

Test Generation ◽

Gate Oxide Short

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Gate Oxide Short Defect Model in FinFETs

Journal of Electronic Testing ◽

10.1007/s10836-018-5727-8 ◽

2018 ◽

Vol 34 (3) ◽

pp. 351-362

Author(s):

Roya Dibaj ◽

Dhamin Al-Khalili ◽

Maitham Shams

Keyword(s):

Defect Model ◽

Gate Oxide Short

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Investigation of gate oxide short in FinFETs and the test methods for FinFET SRAMs

2013 IEEE 31st VLSI Test Symposium (VTS) ◽

10.1109/vts.2013.6548929 ◽

2013 ◽

Author(s):

Chen-Wei Lin ◽

M. C.-T Chao ◽

Chih-Chieh Hsu

Keyword(s):

Test Methods ◽

Gate Oxide Short

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Modeling of gate oxide short defects in MOSFETS

2009 4th International Design and Test Workshop (IDT) ◽

10.1109/idt.2009.5404118 ◽

2009 ◽

Author(s):

Sarah Chehade ◽

Ali Chehab ◽

Ayman Kayssi

Keyword(s):

Gate Oxide Short

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Defect analysis, test generation and fault simulation for gate oxide shorts in CMOS ICs

10.1109/iscas.1990.112567 ◽

2002 ◽

Author(s):

S.I. Syed ◽

D.M. Wu

Keyword(s):

Test Generation ◽

Fault Simulation ◽

Defect Analysis

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Boolean and current detection of MOS transistor with gate oxide short

Proceedings International Test Conference 2001 (Cat. No.01CH37260) ◽

10.1109/test.2001.966730 ◽

2002 ◽

Author(s):

M. Renovell ◽

J.M. Galliere ◽

F. Azais ◽

Y. Bertrand

Keyword(s):

Mos Transistor ◽

Gate Oxide Short ◽

Current Detection

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Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.63-64.395 ◽

1998 ◽

Vol 63-64 ◽

pp. 395-406 ◽

Author(s):

M. Tamatsuka ◽

K. Miki

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Electron Beam ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Induced Current ◽

Defect Analysis ◽

Electron Beam Induced Current ◽

Scanning Electron

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A Novel Electrical Test by C-AFM to Differentiate Gate-to-S/D Gate Oxide Short From Non-Gate Oxide Short Defect in Real Products

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0491 ◽

2004 ◽

Author(s):

Cheng-Piao Lin ◽

Cheng-Hsu Wu ◽

Cheng-Chun Ting

Keyword(s):

Atomic Force Microscopy ◽

Electrical Test ◽

Force Microscopy ◽

Atomic Force ◽

Gate Oxide Short ◽

Voltage Contrast

Abstract A method to differentiate Gate-to-S/D Gate Oxide Short from non-Gate Oxide Short defect in real products by analyzing the I-V curves acquired by Conducting-Atomic Force Microscopy (C-AFM) is presented. The method allows not only the correct short path to be identified, but also allows differentiation of gate-to-S/D GOS from non-GOS problems, which cannot be reached by passive voltage contrast (PVC) only.

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