Boolean and current detection of MOS transistor with gate oxide short

Electric characteristics of devices in advanced CMOS technologies change over the time because of the impact of the ionizing radiation effects. Device aging is caused by cumulative contribution of generation of defects in the gate oxide and/or at the interface silicon-oxide. The concentration of these defects is time and bias-dependent values. Existing models include these effects through constant shift of voltage threshold. A method for including ionizing radiation effects in Spice models of MOS transistor and FinFET, based on an auxiliary diode circuit using for derivation of values of surface potential, that also calculates the correction time-dependent voltage due to concentration of trapped charges, is shown in this paper.

Download Full-text

A Novel Electrical Test by C-AFM to Differentiate Gate-to-S/D Gate Oxide Short From Non-Gate Oxide Short Defect in Real Products

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0491 ◽

2004 ◽

Author(s):

Cheng-Piao Lin ◽

Cheng-Hsu Wu ◽

Cheng-Chun Ting

Keyword(s):

Atomic Force Microscopy ◽

Short Path ◽

Gate Oxide ◽

Electrical Test ◽

Force Microscopy ◽

Atomic Force ◽

Gate Oxide Short ◽

Voltage Contrast

Abstract A method to differentiate Gate-to-S/D Gate Oxide Short from non-Gate Oxide Short defect in real products by analyzing the I-V curves acquired by Conducting-Atomic Force Microscopy (C-AFM) is presented. The method allows not only the correct short path to be identified, but also allows differentiation of gate-to-S/D GOS from non-GOS problems, which cannot be reached by passive voltage contrast (PVC) only.

Download Full-text

Study on Effect of Electron Beam Irradiation in SEM-Based Nanoprobing on MOS Transistor

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0128 ◽

2016 ◽

Author(s):

Hara Noriko ◽

Bito Nanami ◽

Ebisuda Mai ◽

Tabata Suguru ◽

Numazaki Naoki ◽

...

Keyword(s):

Electron Beam ◽

Failure Analysis ◽

Oxide Layer ◽

Electron Beam Irradiation ◽

Gate Oxide ◽

Mos Transistors ◽

Beam Irradiation ◽

Mos Transistor ◽

Significant Change ◽

Iv Curves

Abstract Nanoprobing is an indispensable method for failure analysis to identify failure cells and to approach the root causes, providing electric characteristics of the failure of the MOS transistor. In this paper, the characteristic degradation on MOS transistors with SEM-based nanoprobing is studied to find out the critical accelerating voltage, comparing it to the characteristic obtained by the mechanical prober. In this experiment, n-type MOS transistors with thick gate oxide layer (40nm) were used. The effect of electron beam irradiation was also investigated. Significant change was not observed in n+(drain)/p-well IV curves. The paper looks at the influence of the additional phenomena during SEM-based nanoprobing analysis on a characteristics change of a specimen. For MOS transistor with thick gate oxide used in this study, irradiation influence is possibly more notable than normal voltage cell cases.

Download Full-text