Influence of bias voltage on optical and structural characteristics of Cu3N films deposited by reactive RF magnetron sputtering in a pure nitrogen atmosphere

2020 ◽  
Vol 112 ◽  
pp. 104995
Author(s):  
Mohammad Reza Zamani Meymian ◽  
Ali Delavari Heravi ◽  
Ali Kosari Mehr
Keyword(s):  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Structural Characteristics ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Atmosphere ◽  
Pure Nitrogen ◽  
Reactive Rf Magnetron Sputtering ◽  
Pure Nitrogen Atmosphere

Green Emission from Er-Doped AlN Thin Films Prepared by RF Magnetron Sputtering

2000 ◽  
Vol 621 ◽  
Author(s):  
V. I. Dimitrova ◽  
F. Perjeru ◽  
Hong Chen ◽  
M. E. Kordesch
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Indium Tin Oxide ◽  
Green Emission ◽  
Ground Level ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Atmosphere ◽  
Oxide Glass ◽  
Pure Nitrogen ◽  
Er Doped

ABSTRACTThin films of Er doped AlN, ∼ 200 nm thick, were grown on indium tin oxide/aluminum titanium oxide/glass substrates using RF magnetron sputtering in a pure nitrogen atmosphere. To optically activate Er all films were subject to post-deposition annealing in flowing nitrogen atmosphere at atmospheric pressure at temperatures between 1023-1223 K for 10-60 minutes. The visible cathodoluminescence (CL) in the green was detected at both 11 K and 300K. The strongest CL peaks were observed at 558 nm and 537 nm (11 K), which correspond to the transitions from 4S3/2 and 2H11/2 to the 4I15/2 ground level. Electroluminescence (EL) studies of AlN:Er alternating-current thin-film electroluminescent (ACTFEL) devices were performed at 300 K. The turn-on voltage was found to be around 80-100 V for our ACTFEL devices. The intensity of the EL emission rapidly increases with the voltage increasing in the investigated range of 110-130 V.

scholarly journals Effect of Bias Voltage on Microstructure and Properties of Tantalum Nitride Coatings Deposited by RF Magnetron Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 911
Author(s):  
Wei Dai ◽  
Yunzhan Shi
Keyword(s):  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Rf Magnetron Sputtering ◽  
Amorphous Structure ◽  
Tribological Performance ◽  
Tantalum Nitride ◽  
Growth Morphology ◽  
Low Friction ◽  
Nitride Coatings ◽  
Overall Performance

TaNx coatings were deposited by RF magnetron sputtering with different bias voltages. The growth morphology, crystalline structure, chemical bond structure, hardness and elastic modulus, adhesion strength and tribological performance of the coatings were studied as a function of the bias voltage. The results showed that an increasing bias voltage refines the coating grains and facilitates structure densification. Simultaneously, the structure of the TaNx coatings transfers from a composite structure consisting of TaN and Ta2N crystals, through a single composite mainly composed of the Ta2N crystal, to an amorphous structure as the bias voltage increases from low to high, indicating that the phase composition of the TaNx coatings can be varied by the bias voltage. The coating composed of Ta2N crystal showed a good overall performance including enhanced hardness, enhanced adhesive strength, and good tribological performance with enhanced wear resistance and a low friction coefficient of 0.18.

Stress in NbCxN1-xFilms Prepared by Reactive Rf Magnetron Sputtering

1993 ◽  
Vol 32 (Part 2, No. 6B) ◽  
pp. L834-L836 ◽  
Author(s):  
Shogo Kiryu ◽  
Akira Shoji ◽  
Satoshi Kohjiro ◽  
Shinji Kodaira
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Reactive Rf Magnetron Sputtering

Substrates Effect on the Phase Transition of GaN Thin Films by Sputter Deposition

2019 ◽  
Vol 971 ◽  
pp. 79-84
Author(s):  
Chun Guang Zhang
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Nitrogen Atmosphere ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Pure Nitrogen ◽  
X Ray ◽  
Zinc Blende ◽  
Planar Magnetron ◽  
Pure Nitrogen Atmosphere

As a promising third generation semiconductor material, gallium nitride (GaN) has become a research hotspot in optoelectronic field nowadays. In this paper, GaN thin films were grown by radio frequency (RF) planar magnetron sputtering of a powder GaN target in a pure nitrogen atmosphere at (0.2 – 2.0) Pa, (10 - 100) W onto various substrates such as GaAs (100), Si (100), Si (111), Al2O3(0001) and glass without any buffer layer. A clear phase transition from the metastable cubic zinc-blende (c - ZB) to the stable hexagonal wurtzite (h - WZ) dependence on substrates has been found in the GaN thin films. And the phase transition of GaN films were studied by X-ray diffraction (XRD), photoluminescence (PL) and Raman spectroscopy.

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