Influence of the substrate surface texture on the photon-sensitivity stability of CsI thin film photocathodes

2009 ◽  
Vol 610 (1) ◽  
pp. 234-237 ◽  
Author(s):  
M.A. Nitti ◽  
A. Tinti ◽  
A. Valentini ◽  
E. Nappi ◽  
P. Acquafredda ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Texture ◽  
Substrate Surface

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

Thin-Film High-Barrier Technology for New Type Packaging Material

2010 ◽  
Vol 113-116 ◽  
pp. 2333-2336 ◽  
Author(s):  
Chun Wei Li ◽  
Xue Song Jiang ◽  
Qun Li Zhang ◽  
Shu Yan Xu ◽  
Gui Ying Wang
Keyword(s):  
Thin Film ◽  
Food Packaging ◽  
Substrate Surface ◽  
Aluminum Foil ◽  
Packaging Material ◽  
Research Progress ◽  
Current Status ◽  
High Polymer ◽  
New Type ◽  
Reactive Gases

Food Packaging material requires an excellent barrier ability to humidity and oxygen.SiOx barrier thin film deposited on high polymer substrate can compare beauty with aluminum foil in the barrier quality,even more SiOx barrier thin film is obviously allowing microwave permeating directly and it also provide a chance for merchant to vision their production in shelf life.SiOx film as barrier packaging material is becoming a high light.The current status and research progress of new type high barrier thin film packaging material were overviewed and production technology was introduced. The various influencing factors were discussed, including background vacuum, reactive gases, and pretreatment of the substrate surface and properties.

scholarly journals Improved Mechanical Properties and Corrosion Resistance of Mg-Based Bulk Metallic Glass Composite by Coating with Zr-Based Metallic Glass Thin Film

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1212
Author(s):  
Pei-Hua Tsai ◽  
Chung-I Lee ◽  
Sin-Mao Song ◽  
Yu-Chin Liao ◽  
Tsung-Hsiung Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Corrosion Resistance ◽  
Metallic Glass ◽  
Bulk Metallic Glass ◽  
Substrate Surface ◽  
Bending Test ◽  
Corrosion Behaviors ◽  
Lightweight Structure ◽  
Mechanical Properties And Corrosion

Mg-based bulk metallic glass (BMG) and its composite (BMGC) can be excellent candidates as lightweight structure materials, but lack of anti-corrosion ability may restrict their application. In order to enhance the natural weak point of Mg-based BMGC, a 200-nm thick Zr-based metallic glass thin film (MGTF) ((Zr53Cu30Ni9Al8)99.5Si0.5) was applied and its mechanical properties as well as its corrosion resistance were appraised. The results of a 3-point bending test revealed that the flexural strength of the Mg-based BMGC with 200-nm thick Zr-based MGTF coating can be greatly enhanced from 180 to 254 MPa. We propose that the Zr-based MGTF coating can help to cover any small defects of a substrate surface, provide a protecting layer to prevent stress concentration, and cease crack initiation from the specimen surface during bending tests. Moreover, the results of anti-corrosion behavior analysis revealed a similar trend between the Mg-based BMG, Mg-based BMGC, and Mg-based BMGC with Zr-based MGTF coating in 0.9 wt.% sodium chloride solution. The readings show a positive effect with the Zr-based MGTF coating. Therefore, the 200-nm thick Zr-based MGTF coating is a promising solution to provide protection for both mechanical and anti-corrosion behaviors of Mg-based BMGC and reinforce its capability as structure material in island environments.

Performances of Sexithiophene Based Thin-Film Transistor Using Self-Assembled Monolayers

1997 ◽  
Vol 488 ◽  
Author(s):  
J. Collet ◽  
O. Tharaud ◽  
C. Legrand ◽  
A. Chapoton ◽  
D. Vuillaume
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
High Performance ◽  
Film Formation ◽  
Substrate Surface ◽  
High Surface ◽  
Thin Film Transistor ◽  
Subthreshold Slope ◽  
Self Assembled Monolayer ◽  
Self Assembled

AbstractHigh performance thin-film transistors (TFT) made of conducting oligomers are obtained when the organic films are well ordered at a molecular level. Highly ordered films are obtained provided that oligomers have a sufficient mobility on the substrate surface during film formation. One possible way to fulfill such a condition is to evaporate oligomers on heated substrates [1,2]. In this work, we suggest that a high surface mobility is obtained by a chemical functionalization of the silicon dioxide surface, and the corresponding improvements of the TFT performances are evidenced. A self-assembled monolayer of octadecyltrichlorosilane (OTS) was deposited on the SiO2 by chemisorption from solution before the evaporation of sexithiophene film. Room temperature current-voltage measurements indicate that the presence of the OTS monolayer improves TFT performances : threshold voltage is decreased, subthreshold slope is decreased, a high current ratio Ion/Ioff is obtained for a reduced gate voltage excursion, the fieldeffect mobility is slightly increased. We have also fabricated and characterized a nanometer scale organic FET (gate length = 50 nm) made of 6T films and only with a self-assembled monolayer as the insulating film between the degenerated silicon substrate (gate) and the conducting channel (no thick SiO2, we call it « oxide-free » organic FET). Performances of this nanometer size organic FETs are the following : subthreshold slope of 0.35V/dec, threshold voltage of −1.3V, effective mobility of 2×10−4 cm2/V.s.

Metalorganic Deposition (MOD): A Nonvacuum, Spin-on, Liquid-Based, Thin Film Method

MRS Bulletin ◽  
1989 ◽  
Vol 14 (10) ◽  
pp. 48-53 ◽  
Author(s):  
J.V. Mantese ◽  
A.L. Micheli ◽  
A.H. Hamdi ◽  
R.W. Vest
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Precursor ◽  
Metalorganic Deposition ◽  
Constituent Elements ◽  
Film Method

There are many methods of depositing thin film materials: thermal evaporation, sputtering, electron or laser beam evaporation, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE). A good survey of many of the deposition methods appears in the 1988 November and December issues of the MRS BULLETIN. One method not included in that survey, however, is metalorganic deposition (MOD), a powerful method for depositing a variety of materials.Metalorganic deposition is not to be confused with metalorganic chemical vapor deposition (MOCVD), which is a gaseous deposition method. MOD is a nonvacuum, liquid-based, spin-on method of depositing thin films. A suitable organic precursor, dissolved in solution, is dispensed onto a substrate much like photoresist. The substrate is spun at a few thousand revolutions per minute, removing the excess fluid, driving off the solvent, and uniformly coating the substrate surface with an organic film a few microns thick. The soft metalorganic film is then pyrolyzed in air, oxygen, nitrogen, or other suitable atmosphere to convert the metalorganic precursors to their constituent elements, oxides, or other compounds. Figure 1 shows a schematic of the deposition process including a prebake and annealing (if necessary).

scholarly journals P3HT Nanofibrils Thin-Film Transistors by Adsorbing Deposition in Suspension

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3643 ◽  
Author(s):  
Shuichi Nagamatsu ◽  
Masataka Ishida ◽  
Shougo Miyajima ◽  
Shyam S. Pandey
Keyword(s):  
Thin Film ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Preparation Method ◽  
Substrate Surface ◽  
Thin Film Transistor ◽  
Current Ratio ◽  
P3ht Film ◽  
Polymer Thin Film ◽  
Film Preparation

A novel film preparation method utilizing polymer suspension, entitled adsorbing deposition in suspensions (ADS), has been proposed. The poly(3-hexylthiophene) (P3HT) toluene solution forms P3HT nanofibrils dispersed suspension by aging. P3HT nanofibrils are highly crystallized with sharp vibronic absorption spectra. By the ADS method, only P3HT nanofibrils in suspension can be deposited on the substrate surface without any disordered fraction from the dissolved P3HT in suspension. Formed ADS film contains only the nanostructured conjugated polymer. Fabricated polymer thin-film transistor (TFT) utilizing ADS P3HT film shows good TFT performances with low off current, narrow subthreshold swing and large on/off current ratio.

scholarly journals Epitaxial Order Driven by Surface Corrugation: Quinquephenyl Crystals on a Cu(110)-(2×1)O Surface

Crystals ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 373 ◽  
Author(s):  
Roland Resel ◽  
Markus Koini ◽  
Jiri Novak ◽  
Steven Berkebile ◽  
Georg Koller ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Surface ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Crystallographic Structure ◽  
Initial Growth ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Lattice Matching ◽  
Atomic Force

A 30 nm thick quinquephenyl (5P) film was grown by molecular beam deposition on a Cu(110)(2×1)O single crystal surface. The thin film morphology was studied by light microscopy and atomic force microscopy and the crystallographic structure of the thin film was investigated by X-ray diffraction methods. The 5P molecules crystallise epitaxially with (201)5P parallel to the substrate surface (110)Cu and with their long molecular axes parallel to [001]Cu. The observed epitaxial alignment cannot be explained by lattice matching calculations. Although a clear minimum in the lattice misfit exists, it is not adapted by the epitaxial growth of 5P crystals. Instead the formation of epitaxially oriented crystallites is determined by atomic corrugations of the substrate surface, such that the initially adsorbed 5P molecules fill with its rod-like shape the periodic grooves of the substrate. Subsequent crystal growth follows the orientation and alignment of the molecules taken within the initial growth stage.

TEM Study of the Effect of the Sapphire Substrate Surface Orientation on the Microstructure of Tin Dioxide Films

2001 ◽  
Vol 7 (S2) ◽  
pp. 1220-1221
Author(s):  
J. E. Dominguez ◽  
L. Fu ◽  
X. Q. Pan
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
High Performance ◽  
Tin Dioxide ◽  
Substrate Surface ◽  
Sensor Arrays ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Oxide Thin Film ◽  
Thin Film Sensors

Tin dioxide (SnO2) has been extensively studied and used as gas sensors to detect toxic gases such as CO, NOxand flammable gases like H2.[l] Recently, considerable researches have focused on thin film sensors due to their high performance as well as their integration compatibility with semiconductor technology for making microsensors and sensor arrays. [2] The performance of thin film sensors is remarkably influenced by the way they were fabricated.[3] Among various deposition techniques, pulsed laser deposition (PLD) has shown great prominence in the deposition of a wide variety of oxide thin film materials such as high Tc superconductors, semiconductors and dielectrics. in this work we present our experimental results on tin dioxide films deposited using pulsed laser ablation on sapphire (α -Al2O3) substrates with different surface orientations.Tin oxide films with a thickness of 100 nm were deposited on the (1012) and (0001) sapphire by pulsed laser ablation of ceramic SnO2 targets.

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