scholarly journals Mechanism of epitaxial growth of silica nanowires reinforcing agent in porous SiC scaffold

2021 ◽  
Vol 53 ◽  
pp. 535-560
Author(s):  
Ahmed El-Ghannam ◽  
Sujithra Chandrasekaran ◽  
Farjana Sultana
Keyword(s):  
Epitaxial Growth ◽  
Reinforcing Agent ◽  
Silica Nanowires ◽  
Porous Sic

Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them

2002 ◽  
Vol 742 ◽  
Author(s):  
Balaji Raghothamachar ◽  
Jie Bai ◽  
William M. Vetter ◽  
Perena Gouma ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Screw Dislocation ◽  
Pore Morphology ◽  
Porous Substrate ◽  
X Ray ◽  
Porous Sic ◽  
Screw Dislocation Density

ABSTRACTPorous 6H-SiC and 4H-SiC wafers formed by anodization have been characterized in this study prior to and following the CVD deposition of SiC epitaxial layers, using a combination of synchrotron white beam x-ray topography (SWBXT), SEM, TEM and optical microscopy. Under the high temperatures employed during epitaxial growth, a significant change in pore morphology occurs. While no evidence of reduced screw dislocation density in the epilayers is obtained, a small tilt of the epilayers with respect to the porous substrate observed on x-ray topographs could play a role in limiting penetration of defects from the substrate.

Mechanism of misfit stress relaxation during epitaxial growth of GaN on porous SiC substrates

2006 ◽  
Vol 32 (12) ◽  
pp. 1011-1013
Author(s):  
M. G. Mynbaeva ◽  
O. V. Konstantinov ◽  
K. D. Mynbaev ◽  
A. E. Romanov ◽  
A. A. Sitnikova
Keyword(s):  
Stress Relaxation ◽  
Epitaxial Growth ◽  
Misfit Stress ◽  
Porous Sic

CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates

2006 ◽  
pp. 255-258
Author(s):  
Y. Shishkin ◽  
Yue Ke ◽  
Fei Yan ◽  
Robert P. Devaty ◽  
W.J. Choyke ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Porous Sic

Porous SiC – Prospective Applications (Invited)

2002 ◽  
Vol 742 ◽  
Author(s):  
Marina Mynbaeva
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
Insulating Material ◽  
New Applications ◽  
Porous Sic

ABSTRACTPossible applications for porous SiC (PSC) are addressed and related innovative aspects discussed. The formation and properties of PSC itself are considered first, since they define the area where PSC can be used. Then epitaxial growth on PSC substrates is reviewed in detail, with the emphasis on the chemical vapor deposition (CVD) technique. Next, new applications featuring the in-diffusion of V and Si into PSC for obtaining semi-insulating material and autodoping of GaN epitaxial layers from PSC substrates are presented.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Determination of creep mechanisms in various silicon carbides via TEM

1986 ◽  
Vol 44 ◽  
pp. 484-487
Author(s):  
C. H. Carter ◽  
J. E. Lane ◽  
J. Bentley ◽  
R. F. Davis
Keyword(s):  
Heat Exchangers ◽  
Sintered Material ◽  
Polycrystalline Material ◽  
Chemical Vapor ◽  
Graphite Substrate ◽  
Second Phase ◽  
Reaction Bonding ◽  
Creep Mechanisms ◽  
Porous Sic

Silicon carbide (SiC) is the generic name for a material which is produced and fabricated by a number of processing routes. One of the three SiC materials investigated at NCSU is Norton Company's NC-430, which is produced by reaction-bonding of Si vapor with a porous SiC host which also contains free C. The Si combines with the free C to form additional SiC and a second phase of free Si. Chemical vapor deposition (CVD) of CH3SiCI3 onto a graphite substrate was employed to produce the second SiC investigated. This process yielded a theoretically dense polycrystalline material with highly oriented grains. The third SiC was a pressureless sintered material (SOHIO Hexoloy) which contains B and excess C as sintering additives. These materials are candidates for applications such as components for gas turbine, adiabatic diesel and sterling engines, recouperators and heat exchangers.

AEM of reaction-bonded SiC

1992 ◽  
Vol 50 (1) ◽  
pp. 344-345
Author(s):  
K Das Chowdhury ◽  
R. W. Carpenter ◽  
W. Braue
Keyword(s):  
Mechanical Properties ◽  
Phase Transformation ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Liquid Silicon ◽  
Structural Ceramic ◽  
Few Data

Research on reaction-bonded SiC (RBSiC) is aimed at developing a reliable structural ceramic with improved mechanical properties. The starting materials for RBSiC were Si,C and α-SiC powder. The formation of the complex microstructure of RBSiC involves (i) solution of carbon in liquid silicon, (ii) nucleation and epitaxial growth of secondary β-SiC on the original α-SiC grains followed by (iii) β>α-SiC phase transformation of newly formed SiC. Due to their coherent nature, epitaxial SiC/SiC interfaces are considered to be segregation-free and “strong” with respect to their effect on the mechanical properties of RBSiC. But the “weak” Si/SiC interface limits its use in high temperature situations. However, few data exist on the structure and chemistry of these interfaces. Microanalytical results obtained by parallel EELS and HREM imaging are reported here.

Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-221-Pr8-228
Author(s):  
E. de Paola ◽  
P. Duverneuil ◽  
A. Langlais ◽  
M. Nguyen
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Barrel Reactor
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