Interfacial Reaction and Al Impurity Removal at An Early Stage of Si Purification Through Slag Refining

The interfacial reactions between impurities (Al and Ti) and slag onset of Si purification by 51 mol% SiO2–34 mol% CaO–15 mol% MgO slag addition were studied to enhance impurity removal efficiency from Si. The Al distribution behavior at the Si/Slag interface was investigated; a short reaction time (10 s) resulted in the formation of successive SiO2–CaO–MgO–Al2O3 layers in the slag with a thickness of 10 µm; increasing the reaction time (60 s) resulted in the entire ternary slag being changed into SiO2–CaO–MgO–Al2O3 quaternary slag due to the diffusion of Al2O3. It was shown that the highest impurity removal rate of Al could be achieved at the onset of the slag refining process. Based on the Ti distribution at the Si/slag interface, the slag refinement with 51 mol% SiO2–34 mol% CaO–15 mol% MgO had no effect on Ti removal.

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Impurity Removal from Diamond-Wire Cutting Waste by Slag Refining and Electromagnetic Stirring

JOM ◽

10.1007/s11837-020-04184-7 ◽

2020 ◽

Vol 72 (7) ◽

pp. 2648-2655 ◽

Cited By ~ 1

Author(s):

Yunyang Zhu ◽

Jijun Wu ◽

Qiliang Wang ◽

Wenhui Ma ◽

Kuixian Wei ◽

...

Keyword(s):

Electromagnetic Stirring ◽

Diamond Wire ◽

Impurity Removal ◽

Slag Refining ◽

Wire Cutting

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Early Stage of Solid State Interfacial Reaction between Copper and Tin

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.283-286.323 ◽

2009 ◽

Vol 283-286 ◽

pp. 323-328 ◽

Cited By ~ 2

Author(s):

Masakatsu Maeda ◽

Naoto Inoue ◽

Takaaki Sato ◽

Yasuo Takahashi

Keyword(s):

Solid State ◽

Intermetallic Compounds ◽

Interfacial Reaction ◽

Incubation Time ◽

Annealing Temperature ◽

Early Stage ◽

Product Layer ◽

Reaction Annealing ◽

Time Changes ◽

Reaction Product Layer

High-purity plates of Cu and Sn were diffusion bonded to clarify the early stage of the solid state interfacial reaction between Cu and Sn, focusing on the incubation time for the formation of intermetallic compounds. A clear incubation time for the formation of intermetallic compounds is observed at every temperature between 423 and 493 K. The incubation time changes depending on the annealing temperature. The interface annealed at 423 K for 3.60 ks maintains the direct interconnection between Cu and Sn being free of intermetallic compounds. The exposure of Cu surface to air affects the interfacial reaction. Annealing of the Cu/Sn interface at 493 K for 3600 s starts to form voids by using the Cu plates exposed for 8.64×104 s or longer to air. Furthermore, the reaction product layer formed by the same annealing condition becomes thinner when the Cu plates exposed for 8.64×105 s or longer to air are used.

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Impurity removal from brass alloy by slag refining treatment

Metallurgical Research & Technology ◽

10.1051/metal/2021017 ◽

2021 ◽

Vol 118 (2) ◽

pp. 216

Author(s):

Yaqiong Li ◽

Lifeng Zhang ◽

Xinyu Cai ◽

Ying Zhang ◽

Ligang Liu ◽

...

Keyword(s):

Alloy Composition ◽

Refining Process ◽

Loss Ratio ◽

Brass Alloy ◽

Impurity Removal ◽

Slag Refining ◽

Removal Efficiencies ◽

Feedstock Production

Impurity removal from Cu-Zn (brass) alloy is an important issue for copper feedstock production. This study investigated brass alloy purification through the slag refining process using two kinds of agents, namely Cu2O and ZnO. The results showed that using ZnO as the slag to purify brass alloy for 1 h can remove impurities, such as Al, Pb, Fe, Ca, and Si, among which the removal efficiencies of Si reached to 60%. After the ZnO slag refining, the Zn loss ratio was only approximately 2%; thus, the brass alloy composition remained stable. The slag refining process using ZnO-contained slag did not only realize brass purification, but also maintained the brass composition stability.

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Alterations in the number of motoneurons containing immunoreactive calcitonin gene-related peptide(CGRP)& choline acetyltransferase(ChAT) in the cervical spinal cord of the wobbler mouse during the development of the motoneuron disease

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100141226 ◽

1995 ◽

Vol 53 ◽

pp. 970-971

Author(s):

L. Vacca-Galloway ◽

Y.Q. Zhang ◽

P. Bose ◽

S.H. Zhang

Keyword(s):

Spinal Cord ◽

Early Stage ◽

Cervical Spinal Cord ◽

Wild Type Mouse ◽

Reflex Response ◽

Mouse Strains ◽

Behavioral Tests ◽

Wobbler Mouse ◽

Stage 4 ◽

Stage 1

The Wobbler mouse (wr) has been studied as a model for inherited human motoneuron diseases (MNDs). Using behavioral tests for forelimb power, walking, climbing, and the “clasp-like reflex” response, the progress of the MND can be categorized into early (Stage 1, age 21 days) and late (Stage 4, age 3 months) stages. Age-and sex-matched normal phenotype littermates (NFR/wr) were used as controls (Stage 0), as well as mice from two related wild-type mouse strains: NFR/N and a C57BI/6N. Using behavioral tests, we also detected pre-symptomatic Wobblers at postnatal ages 7 and 14 days. The mice were anesthetized and perfusion-fixed for immunocytochemical (ICC) of CGRP and ChAT in the spinal cord (C3 to C5).Using computerized morphomety (Vidas, Zeiss), the numbers of IR-CGRP labelled motoneurons were significantly lower in 14 day old Wobbler specimens compared with the controls (Fig. 1). The same trend was observed at 21 days (Stage 1) and 3 months (Stage 4). The IR-CGRP-containing motoneurons in the Wobbler specimens declined progressively with age.

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Automated high-resolution microscopy: the approaches so far

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100125312 ◽

1987 ◽

Vol 45 ◽

pp. 58-61

Author(s):

W. O. Saxton

Keyword(s):

High Resolution ◽

Early Stage ◽

Automatic Recording ◽

Microprocessor Control ◽

Alternative Systems ◽

Electron Image ◽

Complete Automation ◽

Analysis System ◽

High Resolution Microscopy

Recent commercial microscopes with internal microprocessor control of all major functions have already demonstrated some of the benefits anticipated from such systems, such as continuous magnification, rotation-free diffraction and magnification, automatic recording of mutually registered focal series, and fewer control knobs. Complete automation of the focusing, stigmating and alignment of a high resolution microscope, allowing focal series to be recorded at preselected focus values as well, is still imminent rather than accomplished, however; some kind of image pick-up and analysis system, fed with the electron image via a TV camera, is clearly essential for this, but several alternative systems and algorithms are still being explored. This paper reviews the options critically in turn, and stresses the need to consider alignment and focusing at an early stage, and not merely as an optional extension to a basic proposal.

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Direct observation of Fe-Al-Zn ternary intermetallic compound and its transformation during the early stage of hot-dip galvanizing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100151416 ◽

1993 ◽

Vol 51 ◽

pp. 1116-1117

Author(s):

C. S. Lin ◽

W. A. Chiou ◽

M. Meshii

Keyword(s):

Intermetallic Compound ◽

Reaction Rate ◽

Diffusion Rate ◽

Early Stage ◽

Zinc Bath ◽

Steel Sheets ◽

Direct Observations ◽

Solid Iron ◽

Iron And Zinc ◽

Ternary Intermetallic Compound

The galvannealed steel sheets have received ever increased attention because of their excellent post-painting corrosion resistance and good weldability. However, its powdering and flaking tendency during press forming processes strongly impairs its performance. In order to optimize the properties of galvanneal coatings, it is critical to control the reaction rate between solid iron and molten zinc.In commercial galvannealing line, aluminum is added to zinc bath to retard the diffusion rate between iron and zinc by the formation of a thin layer of Al intermetallic compound on the surface of steel at initial hot-dip galvanizing. However, the form of this compound and its transformation are still speculated. In this paper, we report the direct observations of this compound and its transformation.The specimens were prepared in a hot-dip simulator in which the steel was galvanized in the zinc bath containing 0.14 wt% of Al at a temperature of 480 °C for 5 seconds and was quenched by liquid nitrogen.

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Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176095 ◽

1990 ◽

Vol 48 (4) ◽

pp. 592-593

Author(s):

C. Vannuffel ◽

C. Schiller ◽

J. P. Chevalier

Keyword(s):

Early Stage ◽

Threading Dislocations ◽

Mbe Growth ◽

Detailed Mechanism ◽

Si Substrates ◽

Initial Stage ◽

Interfacial Defects ◽

Interfacial Dislocations ◽

Step Growth ◽

Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

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