The effect of isopropyl alcohol concentration on the etching process of Si-substrates in KOH solutions

2011 ◽  
Vol 171 (2) ◽  
pp. 436-445 ◽  
Author(s):  
Irena Zubel ◽  
Krzysztof Rola ◽  
Małgorzata Kramkowska
Keyword(s):  
Isopropyl Alcohol ◽  
Alcohol Concentration ◽  
Etching Process ◽  
Si Substrates

scholarly journals Fabrication and study of Raman signal enhancement of pyramid/nano-Ag structured Silic substrate

2021 ◽  
Vol 4 (1) ◽  
pp. 21-23
Author(s):  
Nguyet Dau Tran Anh ◽  
Hieu Van Vo Kim ◽  
Thanh Van Tran Thi ◽  
Luan Huynh Nguyen Thanh ◽  
◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Enhancement Factor ◽  
Isopropyl Alcohol ◽  
Rhodamine 6G ◽  
Alcohol Concentration ◽  
Raman Signal ◽  
Enhancement Effect ◽  
Optimal Parameters ◽  
Chemical Corrosion ◽  
20 Nm

The pyramid-structured silicon substrate was successfully fabricated by a chemical corrosion method with an average thickness of about 1 - 3 μm with the optimal parameters such as corrosion temperature of 70oC, corrosion time of 5 min, concentration KOH of 3 M and isopropyl alcohol concentration of 1 M. After that, the silver nanoparticles layer (thickness 20 nm) was coated on the silicon substrate by a sputtering method to enhance the SERS signal. The results proved that the Pyramid/nano Ag structure silicon substrate showed the enhancement effect of Raman signal, and Rhodamine 6G pigment in food at low concentration (10-6 M) was detected and the enhancement factor was 9.7 × 102.

Electron solvation processes in alcohol-hydrocarbon mixtures

1973 ◽  
Vol 26 (10) ◽  
pp. 2089 ◽  
Author(s):  
BJ Brown ◽  
NT Barker ◽  
DF Sangster
Keyword(s):  
Isopropyl Alcohol ◽  
Optical Transition ◽  
Relative Number ◽  
Spectroscopic Studies ◽  
Alcohol Concentration ◽  
Geminate Recombination ◽  
Solvated Electron ◽  
Transition Energies ◽  
Electron Solvation ◽  
Solvation Processes

The solvated electron has been investigated in mixtures of polar and non-polar liquids (methanol, ethanol, propanol, and isopropyl alcohol respectively in hexane) by pulse-radiolysis. The respective yields and transition energies of the electron in the mixtures do not show the same dielectric dependence as has been established for pure liquids. The relative number of electrons escaping geminate recombination increases with an increase in the alcohol concentration but the mechanisms of optical transition and electron decay remain unchanged. Infrared spectroscopic studies have shown that electron stabilization is related to the existence of quasi-stable associated alcohol complexes. For ethanol, an observed decrease in the solvated free electron yield with an increase in temperature is in accord with a shift in associative equilibrium.

Influence of isopropyl alcohol concentration in urea solution on cloud point and solid point of dewaxed product

1987 ◽  
Vol 23 (2) ◽  
pp. 77-78
Author(s):  
E. Sh. Abdullaev ◽  
A. G. Ismailov ◽  
A. Sh. Gadzhiev ◽  
R. D. Balayan
Keyword(s):  
Cloud Point ◽  
Isopropyl Alcohol ◽  
Alcohol Concentration ◽  
Urea Solution ◽  
Solid Point

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

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