Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1−xAs/InAsyP1−y double-heterostructures on InP

AbstractWe report on the growth of InGaN films, and the fabrication and characterization of GaN homojunction LEDs and InGaN double heterostructure (DH) LEDs on HVPE GaNon- sapphire substrates. The use of these substrates facilitates the III-nitrides growth process, as it avoids the use of complicated buffer layers. We have achieved InGaN films with strong and sharp band-to-band photoluminescence (PL) from 370 to 540 nm. Typical In 0.o9Ga0. g9N/GaN DH films had double-crystal XRD FWHM ∼ 300 arcsec, and 400 nm peak PL emission with FWHM ∼ 100 meV. DH-LEDs were fabricated with InGaN layers with various compositions, and produced strong electroluminescence (EL) in the blue and blue/green regions.

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The measurement of thin-film reaction layers with high-resolution FESEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138026 ◽

1995 ◽

Vol 53 ◽

pp. 330-331

Author(s):

Paul G. Kotula ◽

C. Barry Carter

Keyword(s):

Thin Film ◽

High Resolution ◽

Reaction Layer ◽

Product Layer ◽

Buffer Layers ◽

Oxide Superconductors ◽

Rate Limiting Step ◽

Ceramic Thin Film ◽

Backscattered Electron ◽

Boundary Reaction

Thin-film reactions in ceramic systems are of increasing importance as materials such as oxide superconductors and ferroelectrics are applied in thin-film form. In fact, reactions have been found to occur during the growth of YBa2Cu3O6+x on ZrO2. Additionally, thin-film reactions have also been intentionally initiated for the production of buffer layers for the subsequent growth of high-Tc superconductor thin films. The problem is that the kinetics of ceramic thin-film reactions are not well understood when the reaction layer is very thin; that is, when the rate-limiting step is a phase-boundary reaction as opposed to diffusion of the reactants through the product layer. In this case, the reaction layer is likely to be laterally non-uniform. In the present study, the measurement of thin reaction-product layers is accomplished by first digitally acquiring backscattered-electron images in a high-resolution field-emission scanning electron microscope (FESEM) followed by image analysis. Furthermore, the problem of measuring such small thicknesses (e.g., 20-500nm) over lengths of interfaces longer than 3mm is addressed.

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{10} edge dislocations in YSZ films grown on (100)MgO by PLD

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170384 ◽

1994 ◽

Vol 52 ◽

pp. 530-531

Author(s):

Jason R. Heffelfinger ◽

C. Barry Carter

Keyword(s):

Thin Films ◽

Semiconductor Lasers ◽

Vapor Deposition ◽

Substrate Surface ◽

Laser System ◽

Average Energy ◽

Target Material ◽

Chemical Vapor ◽

Buffer Layers ◽

Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

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TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176496 ◽

1990 ◽

Vol 48 (4) ◽

pp. 672-673

Author(s):

N.A. Bert ◽

A.O. Kosogov

Keyword(s):

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Chemical Vapor ◽

Growth Conditions ◽

Dark Field ◽

Organic Chemical ◽

Simple Liquid ◽

Cross Sectional ◽

Conventional Procedure ◽

Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

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In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

Microscopy and Microanalysis ◽

10.1017/s1431927600032451 ◽

2001 ◽

Vol 7 (S2) ◽

pp. 1276-1277

Author(s):

Y. Akin ◽

R.E. Goddard ◽

W. Sigmund ◽

Y.S. Hascicek

Keyword(s):

Buffer Layer ◽

Lattice Mismatch ◽

Sol Gel ◽

Surface Oxidation ◽

Dip Coating ◽

Buffer Layers ◽

Superconducting Film ◽

Environmental Scanning ◽

Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

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MOLECULAR BEAM EPITAXY OF BaF2/CaF2 BUFFER LAYERS ON THE Si(100) SUBSTRATE FOR MONOLITHIC PHOTORECEIVERS

Автометрия ◽

10.15372/aut20170315 ◽

2017 ◽

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Buffer Layers

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Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300001587 ◽

1997 ◽

Vol 2 ◽

Cited By ~ 6

Author(s):

J. Allègre ◽

P. Lefebvre ◽

J. Camassel ◽

B. Beaumont ◽

Pierre Gibart

Keyword(s):

Layer Thickness ◽

Buffer Layers ◽

Rate Equations ◽

Time Resolved ◽

Versus Layer ◽

Level Model ◽

Shallow Impurities ◽

Aln Buffer ◽

Time Resolved Photoluminescence

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.

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